DE2548903C2 - Verfahren zur Herstellung eines Speicher-Feldeffekttransistors - Google Patents

Verfahren zur Herstellung eines Speicher-Feldeffekttransistors

Info

Publication number
DE2548903C2
DE2548903C2 DE2548903A DE2548903A DE2548903C2 DE 2548903 C2 DE2548903 C2 DE 2548903C2 DE 2548903 A DE2548903 A DE 2548903A DE 2548903 A DE2548903 A DE 2548903A DE 2548903 C2 DE2548903 C2 DE 2548903C2
Authority
DE
Germany
Prior art keywords
insulating layer
source
drain
layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2548903A
Other languages
German (de)
English (en)
Other versions
DE2548903A1 (de
Inventor
Masatada Koganei Tokio/Tokyo Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2548903A1 publication Critical patent/DE2548903A1/de
Application granted granted Critical
Publication of DE2548903C2 publication Critical patent/DE2548903C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE2548903A 1974-11-01 1975-10-31 Verfahren zur Herstellung eines Speicher-Feldeffekttransistors Expired DE2548903C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (enExample) 1974-11-01 1974-11-01

Publications (2)

Publication Number Publication Date
DE2548903A1 DE2548903A1 (de) 1976-05-06
DE2548903C2 true DE2548903C2 (de) 1984-08-30

Family

ID=14913063

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2548903A Expired DE2548903C2 (de) 1974-11-01 1975-10-31 Verfahren zur Herstellung eines Speicher-Feldeffekttransistors

Country Status (3)

Country Link
JP (1) JPS5528232B2 (enExample)
DE (1) DE2548903C2 (enExample)
NL (1) NL176721C (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122374A (en) * 1977-03-31 1978-10-25 Fujitsu Ltd Manufacture for double gate consitution semiconductor device
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
DE2803431A1 (de) * 1978-01-26 1979-08-02 Siemens Ag Verfahren zur herstellung von mos-transistoren
DE2814052A1 (de) * 1978-03-31 1979-10-11 Siemens Ag Verfahren zur herstellung von oxidisolationsschichten fuer floating-gate-mos- transistoren, bzw. mos-transistoren mit mindestens zwei polysilicium-elektroden

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA813537A (en) * 1967-10-17 1969-05-20 Radio Corporation Of America Semiconductor memory device
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device
JPS5330310B2 (enExample) * 1972-09-13 1978-08-25

Also Published As

Publication number Publication date
DE2548903A1 (de) 1976-05-06
NL176721C (nl) 1985-05-17
JPS5528232B2 (enExample) 1980-07-26
JPS5152281A (enExample) 1976-05-08
NL7512828A (nl) 1976-05-04
NL176721B (nl) 1984-12-17

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Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: STREHL, P., DIPL.-ING. DIPL.-WIRTSCH.-ING. SCHUEBE

D2 Grant after examination
8364 No opposition during term of opposition