JPS5152281A - - Google Patents

Info

Publication number
JPS5152281A
JPS5152281A JP49125554A JP12555474A JPS5152281A JP S5152281 A JPS5152281 A JP S5152281A JP 49125554 A JP49125554 A JP 49125554A JP 12555474 A JP12555474 A JP 12555474A JP S5152281 A JPS5152281 A JP S5152281A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP49125554A
Other languages
Japanese (ja)
Other versions
JPS5528232B2 (enExample
Inventor
Katsutada Horiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12555474A priority Critical patent/JPS5528232B2/ja
Priority to DE2548903A priority patent/DE2548903C2/de
Priority to NLAANVRAGE7512828,A priority patent/NL176721C/xx
Publication of JPS5152281A publication Critical patent/JPS5152281A/ja
Publication of JPS5528232B2 publication Critical patent/JPS5528232B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
JP12555474A 1974-11-01 1974-11-01 Expired JPS5528232B2 (enExample)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (enExample) 1974-11-01 1974-11-01
DE2548903A DE2548903C2 (de) 1974-11-01 1975-10-31 Verfahren zur Herstellung eines Speicher-Feldeffekttransistors
NLAANVRAGE7512828,A NL176721C (nl) 1974-11-01 1975-10-31 Werkwijze voor het vervaardigen van een halfgeleidergeheugeninrichting.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12555474A JPS5528232B2 (enExample) 1974-11-01 1974-11-01

Publications (2)

Publication Number Publication Date
JPS5152281A true JPS5152281A (enExample) 1976-05-08
JPS5528232B2 JPS5528232B2 (enExample) 1980-07-26

Family

ID=14913063

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12555474A Expired JPS5528232B2 (enExample) 1974-11-01 1974-11-01

Country Status (3)

Country Link
JP (1) JPS5528232B2 (enExample)
DE (1) DE2548903C2 (enExample)
NL (1) NL176721C (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122374A (en) * 1977-03-31 1978-10-25 Fujitsu Ltd Manufacture for double gate consitution semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2743422A1 (de) * 1977-09-27 1979-03-29 Siemens Ag Wortweise loeschbarer, nicht fluechtiger speicher in floating-gate-technik
DE2803431A1 (de) * 1978-01-26 1979-08-02 Siemens Ag Verfahren zur herstellung von mos-transistoren
DE2814052A1 (de) * 1978-03-31 1979-10-11 Siemens Ag Verfahren zur herstellung von oxidisolationsschichten fuer floating-gate-mos- transistoren, bzw. mos-transistoren mit mindestens zwei polysilicium-elektroden

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948282A (enExample) * 1972-09-13 1974-05-10

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA813537A (en) * 1967-10-17 1969-05-20 Radio Corporation Of America Semiconductor memory device
GB1363190A (en) * 1972-05-31 1974-08-14 Plessey Co Ltd Semiconductor memory device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948282A (enExample) * 1972-09-13 1974-05-10

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53122374A (en) * 1977-03-31 1978-10-25 Fujitsu Ltd Manufacture for double gate consitution semiconductor device

Also Published As

Publication number Publication date
DE2548903A1 (de) 1976-05-06
NL176721C (nl) 1985-05-17
JPS5528232B2 (enExample) 1980-07-26
NL7512828A (nl) 1976-05-04
NL176721B (nl) 1984-12-17
DE2548903C2 (de) 1984-08-30

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