DE2541118A1 - Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften - Google Patents

Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften

Info

Publication number
DE2541118A1
DE2541118A1 DE19752541118 DE2541118A DE2541118A1 DE 2541118 A1 DE2541118 A1 DE 2541118A1 DE 19752541118 DE19752541118 DE 19752541118 DE 2541118 A DE2541118 A DE 2541118A DE 2541118 A1 DE2541118 A1 DE 2541118A1
Authority
DE
Germany
Prior art keywords
zone
drain
type
substrate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752541118
Other languages
German (de)
English (en)
Inventor
Joseph Borel
Vincent Le Goascoz
Jean-Pierre Suat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE2541118A1 publication Critical patent/DE2541118A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE19752541118 1974-09-13 1975-09-15 Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften Withdrawn DE2541118A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Publications (1)

Publication Number Publication Date
DE2541118A1 true DE2541118A1 (de) 1976-03-25

Family

ID=9143080

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752541118 Withdrawn DE2541118A1 (de) 1974-09-13 1975-09-15 Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften

Country Status (5)

Country Link
JP (1) JPS5160174A (enExample)
CH (1) CH590556A5 (enExample)
DE (1) DE2541118A1 (enExample)
FR (1) FR2284983A1 (enExample)
NL (1) NL7510485A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
US4279069A (en) * 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device
JPS58151062A (ja) * 1982-01-28 1983-09-08 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
FR2284983B1 (enExample) 1978-06-09
CH590556A5 (enExample) 1977-08-15
FR2284983A1 (fr) 1976-04-09
NL7510485A (nl) 1976-03-16
JPS5160174A (en) 1976-05-25

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Legal Events

Date Code Title Description
8141 Disposal/no request for examination