FR2284983A1 - Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede - Google Patents

Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Info

Publication number
FR2284983A1
FR2284983A1 FR7431138A FR7431138A FR2284983A1 FR 2284983 A1 FR2284983 A1 FR 2284983A1 FR 7431138 A FR7431138 A FR 7431138A FR 7431138 A FR7431138 A FR 7431138A FR 2284983 A1 FR2284983 A1 FR 2284983A1
Authority
FR
France
Prior art keywords
drain
transistor
field strength
substrate
concn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7431138A
Other languages
English (en)
French (fr)
Other versions
FR2284983B1 (enExample
Inventor
Joseph Borel
Vincent Le Goascoz
Jean-Pierre Suat
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR7431138A priority Critical patent/FR2284983A1/fr
Priority to CH1113975A priority patent/CH590556A5/xx
Priority to NL7510485A priority patent/NL7510485A/xx
Priority to JP50110843A priority patent/JPS5160174A/ja
Priority to DE19752541118 priority patent/DE2541118A1/de
Publication of FR2284983A1 publication Critical patent/FR2284983A1/fr
Application granted granted Critical
Publication of FR2284983B1 publication Critical patent/FR2284983B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
FR7431138A 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede Granted FR2284983A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede
CH1113975A CH590556A5 (enExample) 1974-09-13 1975-08-28
NL7510485A NL7510485A (nl) 1974-09-13 1975-09-05 Werkwijze voor het vervaardigen van een tran- sistor, en zodoende verkregen transistor.
JP50110843A JPS5160174A (en) 1974-09-13 1975-09-12 Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta
DE19752541118 DE2541118A1 (de) 1974-09-13 1975-09-15 Verfahren zur herstellung von mos-transistoren mit verbesserten eigenschaften

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Publications (2)

Publication Number Publication Date
FR2284983A1 true FR2284983A1 (fr) 1976-04-09
FR2284983B1 FR2284983B1 (enExample) 1978-06-09

Family

ID=9143080

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7431138A Granted FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Country Status (5)

Country Link
JP (1) JPS5160174A (enExample)
CH (1) CH590556A5 (enExample)
DE (1) DE2541118A1 (enExample)
FR (1) FR2284983A1 (enExample)
NL (1) NL7510485A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2433240A1 (fr) * 1978-08-08 1980-03-07 Siemens Ag Transistor a effet de champ mos pour des tensions assez elevees
EP0017709A1 (en) * 1979-02-21 1980-10-29 Rockwell International Corporation Memory array device and fabrication process
FR2520556A1 (fr) * 1982-01-28 1983-07-29 Tokyo Shibaura Electric Co Dispositif semi-conducteur forme sur un substrat isolant

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2433240A1 (fr) * 1978-08-08 1980-03-07 Siemens Ag Transistor a effet de champ mos pour des tensions assez elevees
EP0017709A1 (en) * 1979-02-21 1980-10-29 Rockwell International Corporation Memory array device and fabrication process
FR2520556A1 (fr) * 1982-01-28 1983-07-29 Tokyo Shibaura Electric Co Dispositif semi-conducteur forme sur un substrat isolant

Also Published As

Publication number Publication date
FR2284983B1 (enExample) 1978-06-09
CH590556A5 (enExample) 1977-08-15
JPS5160174A (en) 1976-05-25
DE2541118A1 (de) 1976-03-25
NL7510485A (nl) 1976-03-16

Similar Documents

Publication Publication Date Title
JPS55148464A (en) Mos semiconductor device and its manufacture
GB1526679A (en) Method of making a field effect transistor device
GB1328874A (en) Semiconductor devices
JPS5493981A (en) Semiconductor device
Kennedy et al. Source-drain breakdown in an insulated gate, field-effect transistor
GB1357553A (en) Insulated-gate field effect transistors
US2790034A (en) Semiconductor signal translating devices
FR2284983A1 (fr) Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede
GB1390135A (en) Insulated gate semiconductor device
IT1078609B (it) Procedimento per migliorare le caratteristiche dei transistori mos su supporto isolante e dispositivi ottenuti col procedimento
GB1486733A (en) Integrated circuits
JPS5687368A (en) Semiconductor device
TW371355B (en) High voltage metal insulator semiconductor field effect transistor and semiconductor integrated circuit device
JPS5610958A (en) Semiconductor circuit
JPS522289A (en) Method of manufacturing insulation gate-type semiconductor integration circuit device
JPS56118371A (en) Semiconductor integrated circuit device
JPS5619656A (en) Semiconductor ic
GB1130028A (en) Insulated-gate field-effect transistor
JPS5730368A (en) Tunnel fet
JPS55127052A (en) Field effect semiconductor device
GB1469005A (en) Standard telephones cables ltd semiconductor device manufacture
JPS5577177A (en) Mos type semiconductor device
JPS5667962A (en) Gate protection circuit of mos field effect transistor
GB820903A (en) Semiconductor diode
JPS5673468A (en) Mos type semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse