JPS5160174A - Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta - Google Patents

Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta

Info

Publication number
JPS5160174A
JPS5160174A JP50110843A JP11084375A JPS5160174A JP S5160174 A JPS5160174 A JP S5160174A JP 50110843 A JP50110843 A JP 50110843A JP 11084375 A JP11084375 A JP 11084375A JP S5160174 A JPS5160174 A JP S5160174A
Authority
JP
Japan
Prior art keywords
zetsuentaijono
tokuseiokairyosuruhoho
konohohonyotsuteerarerutoranjisuta
gatatoranjisutano
oyobi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50110843A
Other languages
English (en)
Japanese (ja)
Inventor
Boreru Josefu
Ru Goasuko Bansan
Pieeru Suu Jan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of JPS5160174A publication Critical patent/JPS5160174A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/60Insulated-gate field-effect transistors [IGFET]
    • H10D30/67Thin-film transistors [TFT]
    • H10D30/6704Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
JP50110843A 1974-09-13 1975-09-12 Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta Pending JPS5160174A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7431138A FR2284983A1 (fr) 1974-09-13 1974-09-13 Procede d'amelioration des caracteristiques des transistors m.o.s. sur support isolant et transistors obtenus par ledit procede

Publications (1)

Publication Number Publication Date
JPS5160174A true JPS5160174A (en) 1976-05-25

Family

ID=9143080

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50110843A Pending JPS5160174A (en) 1974-09-13 1975-09-12 Zetsuentaijono mos gatatoranjisutano tokuseiokairyosuruhoho oyobi konohohonyotsuteerarerutoranjisuta

Country Status (5)

Country Link
JP (1) JPS5160174A (enExample)
CH (1) CH590556A5 (enExample)
DE (1) DE2541118A1 (enExample)
FR (1) FR2284983A1 (enExample)
NL (1) NL7510485A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2834724A1 (de) * 1978-08-08 1980-02-14 Siemens Ag Mos-feldeffekttransistoren fuer hoehere spannungen
US4279069A (en) * 1979-02-21 1981-07-21 Rockwell International Corporation Fabrication of a nonvolatile memory array device
JPS58151062A (ja) * 1982-01-28 1983-09-08 Toshiba Corp 半導体装置

Also Published As

Publication number Publication date
FR2284983B1 (enExample) 1978-06-09
CH590556A5 (enExample) 1977-08-15
FR2284983A1 (fr) 1976-04-09
DE2541118A1 (de) 1976-03-25
NL7510485A (nl) 1976-03-16

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