DE2454427C2 - Assoziativspeicher - Google Patents
AssoziativspeicherInfo
- Publication number
- DE2454427C2 DE2454427C2 DE2454427A DE2454427A DE2454427C2 DE 2454427 C2 DE2454427 C2 DE 2454427C2 DE 2454427 A DE2454427 A DE 2454427A DE 2454427 A DE2454427 A DE 2454427A DE 2454427 C2 DE2454427 C2 DE 2454427C2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- line
- capacitor
- associative memory
- interrogation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 title claims description 74
- 230000005669 field effect Effects 0.000 claims description 36
- 239000003990 capacitor Substances 0.000 claims description 28
- 230000008929 regeneration Effects 0.000 claims description 4
- 238000011069 regeneration method Methods 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000001066 destructive effect Effects 0.000 claims 1
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- 241000881711 Acipenser sturio Species 0.000 description 1
- 241001076195 Lampsilis ovata Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Storage Device Security (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2454427A DE2454427C2 (de) | 1974-11-16 | 1974-11-16 | Assoziativspeicher |
| FR7530580A FR2291576A1 (fr) | 1974-11-16 | 1975-10-01 | Memoire associative |
| US05/620,481 US4023147A (en) | 1974-11-16 | 1975-10-06 | Associative capacitive storage circuits |
| JP50129393A JPS5916359B2 (ja) | 1974-11-16 | 1975-10-29 | レンソウチヨゾウソウチ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2454427A DE2454427C2 (de) | 1974-11-16 | 1974-11-16 | Assoziativspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2454427A1 DE2454427A1 (de) | 1976-05-20 |
| DE2454427C2 true DE2454427C2 (de) | 1982-04-29 |
Family
ID=5931022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2454427A Expired DE2454427C2 (de) | 1974-11-16 | 1974-11-16 | Assoziativspeicher |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4023147A (enExample) |
| JP (1) | JPS5916359B2 (enExample) |
| DE (1) | DE2454427C2 (enExample) |
| FR (1) | FR2291576A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3912798A1 (de) * | 1989-04-19 | 1990-10-25 | Jung Gmbh Albrecht | Schaltmechanik fuer einen tastschalter |
| US7402868B2 (en) * | 2004-11-01 | 2008-07-22 | Spansion L.L.C. | System and method for protecting semiconductor devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD87604A (enExample) * | ||||
| US3560764A (en) * | 1967-05-25 | 1971-02-02 | Ibm | Pulse-powered data storage cell |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| GB1127270A (en) * | 1967-09-05 | 1968-09-18 | Ibm | Data storage cell |
| US3548386A (en) * | 1968-07-15 | 1970-12-15 | Ibm | Associative memory |
| GB1281387A (en) * | 1969-11-22 | 1972-07-12 | Ibm | Associative store |
| US3701980A (en) * | 1970-08-03 | 1972-10-31 | Gen Electric | High density four-transistor mos content addressed memory |
| US3725879A (en) * | 1970-11-16 | 1973-04-03 | Ibm | Functional memory cell |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3750115A (en) * | 1972-04-28 | 1973-07-31 | Gen Electric | Read mostly associative memory cell for universal logic |
| US3909631A (en) * | 1973-08-02 | 1975-09-30 | Texas Instruments Inc | Pre-charge voltage generating system |
-
1974
- 1974-11-16 DE DE2454427A patent/DE2454427C2/de not_active Expired
-
1975
- 1975-10-01 FR FR7530580A patent/FR2291576A1/fr active Granted
- 1975-10-06 US US05/620,481 patent/US4023147A/en not_active Expired - Lifetime
- 1975-10-29 JP JP50129393A patent/JPS5916359B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2454427A1 (de) | 1976-05-20 |
| JPS5916359B2 (ja) | 1984-04-14 |
| US4023147A (en) | 1977-05-10 |
| JPS5168739A (enExample) | 1976-06-14 |
| FR2291576A1 (fr) | 1976-06-11 |
| FR2291576B1 (enExample) | 1979-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |