JPS5916359B2 - レンソウチヨゾウソウチ - Google Patents
レンソウチヨゾウソウチInfo
- Publication number
- JPS5916359B2 JPS5916359B2 JP50129393A JP12939375A JPS5916359B2 JP S5916359 B2 JPS5916359 B2 JP S5916359B2 JP 50129393 A JP50129393 A JP 50129393A JP 12939375 A JP12939375 A JP 12939375A JP S5916359 B2 JPS5916359 B2 JP S5916359B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- line
- word
- storage cell
- word line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000005669 field effect Effects 0.000 claims description 21
- 210000000352 storage cell Anatomy 0.000 description 41
- 210000004027 cell Anatomy 0.000 description 12
- 238000010586 diagram Methods 0.000 description 5
- 230000008929 regeneration Effects 0.000 description 3
- 238000011069 regeneration method Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
- G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
- G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Storage Device Security (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2454427A DE2454427C2 (de) | 1974-11-16 | 1974-11-16 | Assoziativspeicher |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5168739A JPS5168739A (enExample) | 1976-06-14 |
| JPS5916359B2 true JPS5916359B2 (ja) | 1984-04-14 |
Family
ID=5931022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50129393A Expired JPS5916359B2 (ja) | 1974-11-16 | 1975-10-29 | レンソウチヨゾウソウチ |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4023147A (enExample) |
| JP (1) | JPS5916359B2 (enExample) |
| DE (1) | DE2454427C2 (enExample) |
| FR (1) | FR2291576A1 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3912798A1 (de) * | 1989-04-19 | 1990-10-25 | Jung Gmbh Albrecht | Schaltmechanik fuer einen tastschalter |
| US7402868B2 (en) * | 2004-11-01 | 2008-07-22 | Spansion L.L.C. | System and method for protecting semiconductor devices |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD87604A (enExample) * | ||||
| US3560764A (en) * | 1967-05-25 | 1971-02-02 | Ibm | Pulse-powered data storage cell |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| GB1127270A (en) * | 1967-09-05 | 1968-09-18 | Ibm | Data storage cell |
| US3548386A (en) * | 1968-07-15 | 1970-12-15 | Ibm | Associative memory |
| GB1281387A (en) * | 1969-11-22 | 1972-07-12 | Ibm | Associative store |
| US3701980A (en) * | 1970-08-03 | 1972-10-31 | Gen Electric | High density four-transistor mos content addressed memory |
| US3725879A (en) * | 1970-11-16 | 1973-04-03 | Ibm | Functional memory cell |
| BE789500A (fr) * | 1971-09-30 | 1973-03-29 | Siemens Ag | Memoire a semiconducteurs avec elements de memorisation a un seul transistor |
| US3750115A (en) * | 1972-04-28 | 1973-07-31 | Gen Electric | Read mostly associative memory cell for universal logic |
| US3909631A (en) * | 1973-08-02 | 1975-09-30 | Texas Instruments Inc | Pre-charge voltage generating system |
-
1974
- 1974-11-16 DE DE2454427A patent/DE2454427C2/de not_active Expired
-
1975
- 1975-10-01 FR FR7530580A patent/FR2291576A1/fr active Granted
- 1975-10-06 US US05/620,481 patent/US4023147A/en not_active Expired - Lifetime
- 1975-10-29 JP JP50129393A patent/JPS5916359B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2454427A1 (de) | 1976-05-20 |
| DE2454427C2 (de) | 1982-04-29 |
| US4023147A (en) | 1977-05-10 |
| JPS5168739A (enExample) | 1976-06-14 |
| FR2291576A1 (fr) | 1976-06-11 |
| FR2291576B1 (enExample) | 1979-06-15 |
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