FR2291576A1 - Memoire associative - Google Patents

Memoire associative

Info

Publication number
FR2291576A1
FR2291576A1 FR7530580A FR7530580A FR2291576A1 FR 2291576 A1 FR2291576 A1 FR 2291576A1 FR 7530580 A FR7530580 A FR 7530580A FR 7530580 A FR7530580 A FR 7530580A FR 2291576 A1 FR2291576 A1 FR 2291576A1
Authority
FR
France
Prior art keywords
associative memory
associative
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7530580A
Other languages
English (en)
Other versions
FR2291576B1 (fr
Inventor
Claus Schuenemann
Frank Tsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2291576A1 publication Critical patent/FR2291576A1/fr
Application granted granted Critical
Publication of FR2291576B1 publication Critical patent/FR2291576B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Storage Device Security (AREA)
  • Semiconductor Memories (AREA)
FR7530580A 1974-11-16 1975-10-01 Memoire associative Granted FR2291576A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2454427A DE2454427C2 (de) 1974-11-16 1974-11-16 Assoziativspeicher

Publications (2)

Publication Number Publication Date
FR2291576A1 true FR2291576A1 (fr) 1976-06-11
FR2291576B1 FR2291576B1 (fr) 1979-06-15

Family

ID=5931022

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7530580A Granted FR2291576A1 (fr) 1974-11-16 1975-10-01 Memoire associative

Country Status (4)

Country Link
US (1) US4023147A (fr)
JP (1) JPS5916359B2 (fr)
DE (1) DE2454427C2 (fr)
FR (1) FR2291576A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3912798A1 (de) * 1989-04-19 1990-10-25 Jung Gmbh Albrecht Schaltmechanik fuer einen tastschalter
US7402868B2 (en) * 2004-11-01 2008-07-22 Spansion L.L.C. System and method for protecting semiconductor devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560764A (en) * 1967-05-25 1971-02-02 Ibm Pulse-powered data storage cell
US3701980A (en) * 1970-08-03 1972-10-31 Gen Electric High density four-transistor mos content addressed memory

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD87604A (fr) *
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
GB1127270A (en) * 1967-09-05 1968-09-18 Ibm Data storage cell
US3548386A (en) * 1968-07-15 1970-12-15 Ibm Associative memory
GB1281387A (en) * 1969-11-22 1972-07-12 Ibm Associative store
US3725879A (en) * 1970-11-16 1973-04-03 Ibm Functional memory cell
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3750115A (en) * 1972-04-28 1973-07-31 Gen Electric Read mostly associative memory cell for universal logic
US3909631A (en) * 1973-08-02 1975-09-30 Texas Instruments Inc Pre-charge voltage generating system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3560764A (en) * 1967-05-25 1971-02-02 Ibm Pulse-powered data storage cell
US3701980A (en) * 1970-08-03 1972-10-31 Gen Electric High density four-transistor mos content addressed memory

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
(REVUE US "IBM TECHNICAL DISCLOSURE BULLETIN", VOL. 16, NO. 10, MARS 1974, PAGES 3160-3161 *
ARTICLE: "AC STABLE ASSOCIATIVE MEMORIES" PAR PRICER *
ARTICLE: "LOW-COST ASSOCIATIVE MEMORY" PAR MUNDY ET AUTRES ) *
REVUE US: "IEEE JOURNAL OF SOLID STATE CIRCUITS", VOL. SC7, NO. 5, OCTOBRE 1972, PAGES 364 A 369 *

Also Published As

Publication number Publication date
FR2291576B1 (fr) 1979-06-15
US4023147A (en) 1977-05-10
DE2454427A1 (de) 1976-05-20
DE2454427C2 (de) 1982-04-29
JPS5916359B2 (ja) 1984-04-14
JPS5168739A (fr) 1976-06-14

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Legal Events

Date Code Title Description
ST Notification of lapse