JPS5168739A - - Google Patents

Info

Publication number
JPS5168739A
JPS5168739A JP50129393A JP12939375A JPS5168739A JP S5168739 A JPS5168739 A JP S5168739A JP 50129393 A JP50129393 A JP 50129393A JP 12939375 A JP12939375 A JP 12939375A JP S5168739 A JPS5168739 A JP S5168739A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50129393A
Other languages
Japanese (ja)
Other versions
JPS5916359B2 (ja
Inventor
Shuuneman Kurausu
Tsui Furanku
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5168739A publication Critical patent/JPS5168739A/ja
Publication of JPS5916359B2 publication Critical patent/JPS5916359B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G11C15/043Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements using capacitive charge storage elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Storage Device Security (AREA)
  • Semiconductor Memories (AREA)
JP50129393A 1974-11-16 1975-10-29 レンソウチヨゾウソウチ Expired JPS5916359B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2454427A DE2454427C2 (de) 1974-11-16 1974-11-16 Assoziativspeicher

Publications (2)

Publication Number Publication Date
JPS5168739A true JPS5168739A (enExample) 1976-06-14
JPS5916359B2 JPS5916359B2 (ja) 1984-04-14

Family

ID=5931022

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129393A Expired JPS5916359B2 (ja) 1974-11-16 1975-10-29 レンソウチヨゾウソウチ

Country Status (4)

Country Link
US (1) US4023147A (enExample)
JP (1) JPS5916359B2 (enExample)
DE (1) DE2454427C2 (enExample)
FR (1) FR2291576A1 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3912798A1 (de) * 1989-04-19 1990-10-25 Jung Gmbh Albrecht Schaltmechanik fuer einen tastschalter
US7402868B2 (en) * 2004-11-01 2008-07-22 Spansion L.L.C. System and method for protecting semiconductor devices

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DD87604A (enExample) *
US3560764A (en) * 1967-05-25 1971-02-02 Ibm Pulse-powered data storage cell
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
GB1127270A (en) * 1967-09-05 1968-09-18 Ibm Data storage cell
US3548386A (en) * 1968-07-15 1970-12-15 Ibm Associative memory
GB1281387A (en) * 1969-11-22 1972-07-12 Ibm Associative store
US3701980A (en) * 1970-08-03 1972-10-31 Gen Electric High density four-transistor mos content addressed memory
US3725879A (en) * 1970-11-16 1973-04-03 Ibm Functional memory cell
BE789500A (fr) * 1971-09-30 1973-03-29 Siemens Ag Memoire a semiconducteurs avec elements de memorisation a un seul transistor
US3750115A (en) * 1972-04-28 1973-07-31 Gen Electric Read mostly associative memory cell for universal logic
US3909631A (en) * 1973-08-02 1975-09-30 Texas Instruments Inc Pre-charge voltage generating system

Also Published As

Publication number Publication date
DE2454427A1 (de) 1976-05-20
DE2454427C2 (de) 1982-04-29
JPS5916359B2 (ja) 1984-04-14
US4023147A (en) 1977-05-10
FR2291576A1 (fr) 1976-06-11
FR2291576B1 (enExample) 1979-06-15

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