DE2442131B2 - Dynamisches ein-transistor-speicherelement - Google Patents

Dynamisches ein-transistor-speicherelement

Info

Publication number
DE2442131B2
DE2442131B2 DE19742442131 DE2442131A DE2442131B2 DE 2442131 B2 DE2442131 B2 DE 2442131B2 DE 19742442131 DE19742442131 DE 19742442131 DE 2442131 A DE2442131 A DE 2442131A DE 2442131 B2 DE2442131 B2 DE 2442131B2
Authority
DE
Germany
Prior art keywords
transistor
memory element
information
dynamic
stored
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19742442131
Other languages
German (de)
English (en)
Other versions
DE2442131A1 (de
Inventor
Karlheinrich Dipl.-Ing. 8035 Gauting Horninger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19742442131 priority Critical patent/DE2442131B2/de
Priority to DE19742442133 priority patent/DE2442133C3/de
Priority to DE2442134A priority patent/DE2442134B1/de
Priority to DE2442132A priority patent/DE2442132C3/de
Priority claimed from DE19742442133 external-priority patent/DE2442133C3/de
Priority to FR7526879A priority patent/FR2284165A1/fr
Priority to US05/609,622 priority patent/US4030081A/en
Priority to JP50106842A priority patent/JPS5152248A/ja
Publication of DE2442131A1 publication Critical patent/DE2442131A1/de
Publication of DE2442131B2 publication Critical patent/DE2442131B2/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh
    • G11C11/4023—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh using field effect transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/18—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages
    • G11C19/182—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes
    • G11C19/184—Digital stores in which the information is moved stepwise, e.g. shift registers using capacitors as main elements of the stages in combination with semiconductor elements, e.g. bipolar transistors, diodes with field-effect transistors, e.g. MOS-FET
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Shift Register Type Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE19742442131 1974-09-03 1974-09-03 Dynamisches ein-transistor-speicherelement Withdrawn DE2442131B2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DE19742442131 DE2442131B2 (de) 1974-09-03 1974-09-03 Dynamisches ein-transistor-speicherelement
DE19742442133 DE2442133C3 (de) 1974-09-03 Dynamisches Drei-Transistoren-Speicherelement
DE2442134A DE2442134B1 (de) 1974-09-03 1974-09-03 Verfahren zum Betrieb eines Speicherelementes
DE2442132A DE2442132C3 (de) 1974-09-03 1974-09-03 Dynamisches Schieberegister und Verfahren zu seinem Betrieb
FR7526879A FR2284165A1 (fr) 1974-09-03 1975-09-02 Element de memoire dynamique a transistors
US05/609,622 US4030081A (en) 1974-09-03 1975-09-02 Dynamic transistor-storage element
JP50106842A JPS5152248A (show.php) 1974-09-03 1975-09-03

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE19742442131 DE2442131B2 (de) 1974-09-03 1974-09-03 Dynamisches ein-transistor-speicherelement
DE19742442133 DE2442133C3 (de) 1974-09-03 Dynamisches Drei-Transistoren-Speicherelement
DE2442134A DE2442134B1 (de) 1974-09-03 1974-09-03 Verfahren zum Betrieb eines Speicherelementes
DE2442132A DE2442132C3 (de) 1974-09-03 1974-09-03 Dynamisches Schieberegister und Verfahren zu seinem Betrieb

Publications (2)

Publication Number Publication Date
DE2442131A1 DE2442131A1 (de) 1976-03-18
DE2442131B2 true DE2442131B2 (de) 1976-07-08

Family

ID=27431888

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19742442131 Withdrawn DE2442131B2 (de) 1974-09-03 1974-09-03 Dynamisches ein-transistor-speicherelement
DE2442134A Withdrawn DE2442134B1 (de) 1974-09-03 1974-09-03 Verfahren zum Betrieb eines Speicherelementes
DE2442132A Expired DE2442132C3 (de) 1974-09-03 1974-09-03 Dynamisches Schieberegister und Verfahren zu seinem Betrieb

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE2442134A Withdrawn DE2442134B1 (de) 1974-09-03 1974-09-03 Verfahren zum Betrieb eines Speicherelementes
DE2442132A Expired DE2442132C3 (de) 1974-09-03 1974-09-03 Dynamisches Schieberegister und Verfahren zu seinem Betrieb

Country Status (4)

Country Link
US (1) US4030081A (show.php)
JP (1) JPS5152248A (show.php)
DE (3) DE2442131B2 (show.php)
FR (1) FR2284165A1 (show.php)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52153630A (en) * 1976-06-16 1977-12-20 Matsushita Electric Ind Co Ltd Semiconductor memory device
US4132904A (en) * 1977-07-28 1979-01-02 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
JPS5457875A (en) * 1977-10-17 1979-05-10 Hitachi Ltd Semiconductor nonvolatile memory device
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit
DE2824727A1 (de) * 1978-06-06 1979-12-13 Ibm Deutschland Schaltung zum nachladen der ausgangsknoten von feldeffekt-transistorschaltungen
JPS5538664A (en) * 1978-09-08 1980-03-18 Sanyo Electric Co Ltd Nonvolatile memory circuit
JPH01151095A (ja) * 1987-12-09 1989-06-13 Toshiba Corp 半導体メモリ
JPH02199698A (ja) * 1989-01-30 1990-08-08 Kawasaki Steel Corp 半導体集積回路
JP2529885B2 (ja) * 1989-03-10 1996-09-04 工業技術院長 半導体メモリ及びその動作方法
JP2726503B2 (ja) * 1989-08-09 1998-03-11 川崎製鉄株式会社 集積回路
US5598367A (en) * 1995-06-07 1997-01-28 International Business Machines Corporation Trench EPROM

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE788583A (fr) * 1971-09-16 1973-01-02 Intel Corp Cellule a trois lignes pour memoire a circuit integre a acces aleatoir
US3781570A (en) * 1971-11-22 1973-12-25 Rca Corp Storage circuit using multiple condition storage elements
JPS5710516B2 (show.php) * 1972-12-13 1982-02-26
US3876991A (en) * 1973-07-11 1975-04-08 Bell Telephone Labor Inc Dual threshold, three transistor dynamic memory cell
US3876993A (en) * 1974-03-25 1975-04-08 Texas Instruments Inc Random access memory cell

Also Published As

Publication number Publication date
DE2442132A1 (de) 1976-03-11
DE2442133A1 (de) 1976-03-18
DE2442132C3 (de) 1981-11-05
DE2442132B2 (de) 1978-04-27
JPS5152248A (show.php) 1976-05-08
DE2442131A1 (de) 1976-03-18
US4030081A (en) 1977-06-14
FR2284165A1 (fr) 1976-04-02
DE2442134B1 (de) 1976-02-26
DE2442133B2 (de) 1976-07-08

Similar Documents

Publication Publication Date Title
DE3925153C2 (show.php)
DE102004056911B4 (de) Speicherschaltung sowie Verfahren zum Auslesen eines Speicherdatums aus einer solchen Speicherschaltung
DE3138038C2 (de) Integrierter Halbleiterspeicher
DE19950581A1 (de) Anordnung zur Selbstreferenzierung von ferroelektrischen Speicherzellen
DE2712537A1 (de) Speicherwerk
DE3635344C2 (show.php)
DE3141555A1 (de) Halbleiterspeicher
DE3038641C2 (de) Halbleiter-Speicherschaltung
DE2442131A1 (de) Dynamisches zwei- transistoren-speicherelement
EP0100772B1 (de) Elektrisch programmierbare Speichermatrix
DE2855118B1 (de) Dynamischer FET-Speicher
DE2317497B1 (de) Verfahren zum Betrieb eines Fünf-Transistoren-Speicherelementes
DE3430145C2 (de) Halbleiter-Speichereinrichtung
DE2856838A1 (de) Leseverstaerker- und klinkschaltung fuer einen blockorganisierten speicher aus einem metallnitridoxid
DE69320229T2 (de) DRAM mit geringem Leistungsverbrauch
DE2058869A1 (de) Speichermatrix
DE3815549C2 (show.php)
EP0087818B1 (de) Integrierter dynamischer Schreib-Lese-Speicher
DE3923630A1 (de) Stromquellen-spannungsnachfuehrschaltkreis zur stabilisierung von bitleitungen
DE2442133C3 (de) Dynamisches Drei-Transistoren-Speicherelement
DE3202028A1 (de) Integrieter dynamischer schreib-lese-speicher
DE2021414A1 (de) Binaerspeicherschaltung
DE2310626C3 (de) Assoziativer Speicher
DE2148896C3 (de) Halbleiterspeicher mit Ein-Transistor-Speicherelementen und mit Flipflop-Schaltung zur Informationsbewertung und -regenerierung und Verfahren zum Betrieb dieses Speichers
DE2744490C2 (de) Bipolar-Halbleiterspeicher

Legal Events

Date Code Title Description
8239 Disposal/non-payment of the annual fee