DE2439535A1 - Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien - Google Patents

Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien

Info

Publication number
DE2439535A1
DE2439535A1 DE2439535A DE2439535A DE2439535A1 DE 2439535 A1 DE2439535 A1 DE 2439535A1 DE 2439535 A DE2439535 A DE 2439535A DE 2439535 A DE2439535 A DE 2439535A DE 2439535 A1 DE2439535 A1 DE 2439535A1
Authority
DE
Germany
Prior art keywords
layer
active
insulating layer
substrate
oxygen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2439535A
Other languages
German (de)
English (en)
Inventor
Robert Michael Quinn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2439535A1 publication Critical patent/DE2439535A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6322—Formation by thermal treatments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6682—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/14—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase
    • H10P32/1408—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers
    • H10P32/141—Diffusion of dopants within, into or out of semiconductor bodies or layers within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase from or through or into an external applied layer, e.g. photoresist or nitride layers the applied layer comprising oxides only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material

Landscapes

  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE2439535A 1973-09-17 1974-08-17 Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien Pending DE2439535A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US39810273A 1973-09-17 1973-09-17

Publications (1)

Publication Number Publication Date
DE2439535A1 true DE2439535A1 (de) 1975-07-03

Family

ID=23573993

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2439535A Pending DE2439535A1 (de) 1973-09-17 1974-08-17 Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien

Country Status (9)

Country Link
JP (1) JPS5132422B2 (OSRAM)
BR (1) BR7407742D0 (OSRAM)
CH (1) CH574678A5 (OSRAM)
DE (1) DE2439535A1 (OSRAM)
FR (1) FR2246066B1 (OSRAM)
GB (1) GB1464734A (OSRAM)
IT (1) IT1020140B (OSRAM)
NL (1) NL7412217A (OSRAM)
SE (1) SE402182B (OSRAM)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4013929A1 (de) * 1989-05-02 1990-11-08 Toshiba Kawasaki Kk Verfahren zum herstellen eines halbleiterbauelements
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5220763A (en) * 1975-08-08 1977-02-16 Matsushita Electric Ind Co Ltd Impurity diffusion system
US4152824A (en) * 1977-12-30 1979-05-08 Mobil Tyco Solar Energy Corporation Manufacture of solar cells
JPS5919461B2 (ja) * 1978-12-13 1984-05-07 株式会社日立製作所 シリコン半導体装置の製造方法
JPS56148868A (en) * 1980-04-18 1981-11-18 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS61121326A (ja) * 1984-11-19 1986-06-09 Oki Electric Ind Co Ltd 半導体装置の製造方法
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor
CN113841224B (zh) * 2019-03-22 2025-04-18 朗姆研究公司 提供掺杂硅的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4013929A1 (de) * 1989-05-02 1990-11-08 Toshiba Kawasaki Kk Verfahren zum herstellen eines halbleiterbauelements
DE19908400A1 (de) * 1999-02-26 2000-09-07 Bosch Gmbh Robert Verfahren zur Herstellung hochdotierter Halbleiterbauelemente

Also Published As

Publication number Publication date
BR7407742D0 (pt) 1975-07-15
JPS5132422B2 (OSRAM) 1976-09-13
CH574678A5 (OSRAM) 1976-04-15
IT1020140B (it) 1977-12-20
SE402182B (sv) 1978-06-19
NL7412217A (nl) 1975-03-19
SE7411498L (OSRAM) 1975-03-18
JPS5057776A (OSRAM) 1975-05-20
FR2246066B1 (OSRAM) 1976-12-31
FR2246066A1 (OSRAM) 1975-04-25
GB1464734A (en) 1977-02-16

Similar Documents

Publication Publication Date Title
DE2623009C2 (de) Verfahren zum Herstellen einer Halbleiteranordnung
DE1544329A1 (de) Verfahren zur Herstellung epitaxialer Schichten bestimmter Form
DE2823967C2 (OSRAM)
DE2812658C3 (de) Verfahren zum selektiven Diffundieren von Aluminium in ein Einkristall-Siliciumhalbleitersubstrat
DE2605830C3 (de) Verfahren zur Herstellung eines Halbleiterbauelements
EP0000897A1 (de) Verfahren zum Herstellen von lateral isolierten Siliciumbereichen
DE2517690A1 (de) Verfahren zum herstellen eines halbleiterbauteils
DE2449012C2 (de) Verfahren zur Herstellung von dielektrisch isolierten Halbleiterbereichen
DE1444496A1 (de) Epitaxialer Wachstumsprozess
DE2019655C2 (de) Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers
DE2641752A1 (de) Verfahren zur herstellung eines feldeffekttransistors
DE1148024B (de) Diffusionsverfahren zum Dotieren eines Silizium-Halbleiterkoerpers fuer Halbleiterbauelemente
DE4101130C2 (de) MOS-Feldeffekttransistor und Verfahren zu dessen Herstellung
DE2633714C2 (de) Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung
DE2365056A1 (de) Verfahren zur herstellung von halbleitereinrichtungen unter oertlicher oxidation einer silicium-oberflaeche
DE1514018C3 (de) Verfahren zum Aufbringen von Schutz- und Passivierungsschichten auf Halbleiterplättchen
DE102004004555A1 (de) Verfahren zur Herstellung von hoch dotierten Halbleiterscheiben und versetzungsfreie, hoch dotierte Halbleiterscheiben
DE2211709C3 (de) Verfahren zum Dotieren von Halbleitermaterial
DE2523055A1 (de) Minoritaetstraeger-trennzonen fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
DE1764180B2 (de) Verfahren zum einstellen der ladungstraeger lebensdauer in einer oertlich begrenzten zone eines halbleiterkoerpers
DE2654979B2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE2517252A1 (de) Halbleiterelement
DE69229927T2 (de) Integrierte Struktur einer bipolaren Leistungsanordnung mit hoher Stromdichte und einer schnellen Diode und Verfahren zu ihrer Herstellung
DE2031235B2 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE3133759A1 (de) Feldeffekttransistor