DE2314747A1 - Halbleiterwiderstand - Google Patents
HalbleiterwiderstandInfo
- Publication number
- DE2314747A1 DE2314747A1 DE19732314747 DE2314747A DE2314747A1 DE 2314747 A1 DE2314747 A1 DE 2314747A1 DE 19732314747 DE19732314747 DE 19732314747 DE 2314747 A DE2314747 A DE 2314747A DE 2314747 A1 DE2314747 A1 DE 2314747A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- layer
- resistor
- insulating material
- resistor according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 51
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 238000009413 insulation Methods 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 238000001465 metallisation Methods 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76205—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO in a region being recessed from the surface, e.g. in a recess, groove, tub or trench region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25244572A | 1972-05-11 | 1972-05-11 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2314747A1 true DE2314747A1 (de) | 1973-11-22 |
Family
ID=22956030
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732314747 Pending DE2314747A1 (de) | 1972-05-11 | 1973-03-24 | Halbleiterwiderstand |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS5317394B2 (enrdf_load_stackoverflow) |
| CA (1) | CA985793A (enrdf_load_stackoverflow) |
| DE (1) | DE2314747A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2183709A1 (enrdf_load_stackoverflow) |
| IT (1) | IT979178B (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112779A (en) * | 1974-07-23 | 1976-01-31 | Tokyo Shibaura Electric Co | Handotaisochito sonoseizohoho |
| JPS52146578A (en) * | 1976-05-28 | 1977-12-06 | Texas Instruments Inc | Method of producing resistance element and semiconductor device having same element |
| JPS54136279A (en) * | 1978-04-14 | 1979-10-23 | Nec Corp | Semiconductor device |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3404321A (en) * | 1963-01-29 | 1968-10-01 | Nippon Electric Co | Transistor body enclosing a submerged integrated resistor |
| FR1547292A (fr) * | 1966-12-19 | 1968-11-22 | Gen Electric | Perfectionnements aux dispositifs à semiconducteur |
| NL170902C (nl) * | 1970-07-10 | 1983-01-03 | Philips Nv | Halfgeleiderinrichting, in het bijzonder monolithische geintegreerde halfgeleiderschakeling. |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
-
1973
- 1973-02-16 IT IT7320473A patent/IT979178B/it active
- 1973-03-24 DE DE19732314747 patent/DE2314747A1/de active Pending
- 1973-03-30 FR FR7313782A patent/FR2183709A1/fr active Granted
- 1973-04-11 JP JP4052673A patent/JPS5317394B2/ja not_active Expired
- 1973-04-13 CA CA169,267A patent/CA985793A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2183709B1 (enrdf_load_stackoverflow) | 1976-05-28 |
| CA985793A (en) | 1976-03-16 |
| IT979178B (it) | 1974-09-30 |
| JPS5317394B2 (enrdf_load_stackoverflow) | 1978-06-08 |
| JPS4924373A (enrdf_load_stackoverflow) | 1974-03-04 |
| FR2183709A1 (en) | 1973-12-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |