DE2311170A1 - Halbleiterbauteil mit schottkysperrschicht - Google Patents
Halbleiterbauteil mit schottkysperrschichtInfo
- Publication number
- DE2311170A1 DE2311170A1 DE19732311170 DE2311170A DE2311170A1 DE 2311170 A1 DE2311170 A1 DE 2311170A1 DE 19732311170 DE19732311170 DE 19732311170 DE 2311170 A DE2311170 A DE 2311170A DE 2311170 A1 DE2311170 A1 DE 2311170A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- component according
- barrier layer
- layer
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 40
- 230000004888 barrier function Effects 0.000 title description 10
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 239000002184 metal Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000004347 surface barrier Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- -1 gallium arsenide Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23369372A | 1972-03-10 | 1972-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2311170A1 true DE2311170A1 (de) | 1973-09-13 |
Family
ID=22878317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732311170 Pending DE2311170A1 (de) | 1972-03-10 | 1973-03-07 | Halbleiterbauteil mit schottkysperrschicht |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132541B2 (enrdf_load_stackoverflow) |
| BE (1) | BE796577A (enrdf_load_stackoverflow) |
| CA (1) | CA973978A (enrdf_load_stackoverflow) |
| DE (1) | DE2311170A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2175889A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1412879A (enrdf_load_stackoverflow) |
| IT (1) | IT981160B (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138147U (enrdf_load_stackoverflow) * | 1975-04-30 | 1976-11-08 | ||
| US4119446A (en) * | 1977-08-11 | 1978-10-10 | Motorola Inc. | Method for forming a guarded Schottky barrier diode by ion-implantation |
| JPS6038780U (ja) * | 1983-08-24 | 1985-03-18 | 西川 忠蔵 | スライド写真の台紙 |
| JP2008177369A (ja) * | 2007-01-18 | 2008-07-31 | Sumitomo Electric Ind Ltd | ショットキバリアダイオード |
| JP2016139698A (ja) * | 2015-01-27 | 2016-08-04 | フェニテックセミコンダクター株式会社 | 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置 |
| WO2018150451A1 (ja) * | 2017-02-14 | 2018-08-23 | 三菱電機株式会社 | 電力用半導体装置 |
-
1973
- 1973-02-05 CA CA162,906A patent/CA973978A/en not_active Expired
- 1973-03-06 GB GB1070473A patent/GB1412879A/en not_active Expired
- 1973-03-06 IT IT21245/73A patent/IT981160B/it active
- 1973-03-07 DE DE19732311170 patent/DE2311170A1/de active Pending
- 1973-03-09 FR FR7308622A patent/FR2175889A1/fr not_active Withdrawn
- 1973-03-09 JP JP48028446A patent/JPS5132541B2/ja not_active Expired
- 1973-03-09 BE BE128632A patent/BE796577A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CA973978A (en) | 1975-09-02 |
| FR2175889A1 (enrdf_load_stackoverflow) | 1973-10-26 |
| GB1412879A (en) | 1975-11-05 |
| BE796577A (fr) | 1973-07-02 |
| JPS5132541B2 (enrdf_load_stackoverflow) | 1976-09-13 |
| IT981160B (it) | 1974-10-10 |
| JPS48103275A (enrdf_load_stackoverflow) | 1973-12-25 |
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