CA973978A - Schottky barrier semiconductor device - Google Patents

Schottky barrier semiconductor device

Info

Publication number
CA973978A
CA973978A CA162,906A CA162906A CA973978A CA 973978 A CA973978 A CA 973978A CA 162906 A CA162906 A CA 162906A CA 973978 A CA973978 A CA 973978A
Authority
CA
Canada
Prior art keywords
semiconductor device
schottky barrier
barrier semiconductor
schottky
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA162,906A
Other languages
English (en)
Other versions
CA162906S (en
Inventor
Henry Kressel
Frank Z. Hawrylo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA973978A publication Critical patent/CA973978A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
CA162,906A 1972-03-10 1973-02-05 Schottky barrier semiconductor device Expired CA973978A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23369372A 1972-03-10 1972-03-10

Publications (1)

Publication Number Publication Date
CA973978A true CA973978A (en) 1975-09-02

Family

ID=22878317

Family Applications (1)

Application Number Title Priority Date Filing Date
CA162,906A Expired CA973978A (en) 1972-03-10 1973-02-05 Schottky barrier semiconductor device

Country Status (7)

Country Link
JP (1) JPS5132541B2 (enrdf_load_stackoverflow)
BE (1) BE796577A (enrdf_load_stackoverflow)
CA (1) CA973978A (enrdf_load_stackoverflow)
DE (1) DE2311170A1 (enrdf_load_stackoverflow)
FR (1) FR2175889A1 (enrdf_load_stackoverflow)
GB (1) GB1412879A (enrdf_load_stackoverflow)
IT (1) IT981160B (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138147U (enrdf_load_stackoverflow) * 1975-04-30 1976-11-08
JPS6038780U (ja) * 1983-08-24 1985-03-18 西川 忠蔵 スライド写真の台紙
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
JP2016139698A (ja) * 2015-01-27 2016-08-04 フェニテックセミコンダクター株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
JP6667712B2 (ja) * 2017-02-14 2020-03-18 三菱電機株式会社 電力用半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation

Also Published As

Publication number Publication date
GB1412879A (en) 1975-11-05
JPS5132541B2 (enrdf_load_stackoverflow) 1976-09-13
BE796577A (fr) 1973-07-02
DE2311170A1 (de) 1973-09-13
IT981160B (it) 1974-10-10
FR2175889A1 (enrdf_load_stackoverflow) 1973-10-26
JPS48103275A (enrdf_load_stackoverflow) 1973-12-25

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