IT981160B - Dispositivo semiconduttore a barriera schottky - Google Patents

Dispositivo semiconduttore a barriera schottky

Info

Publication number
IT981160B
IT981160B IT2124573A IT2124573A IT981160B IT 981160 B IT981160 B IT 981160B IT 2124573 A IT2124573 A IT 2124573A IT 2124573 A IT2124573 A IT 2124573A IT 981160 B IT981160 B IT 981160B
Authority
IT
Italy
Prior art keywords
schottky barrier
barrier device
semiconductor schottky
semiconductor
schottky
Prior art date
Application number
IT2124573A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT981160B publication Critical patent/IT981160B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
IT2124573A 1972-03-10 1973-03-06 Dispositivo semiconduttore a barriera schottky IT981160B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23369372A 1972-03-10 1972-03-10

Publications (1)

Publication Number Publication Date
IT981160B true IT981160B (it) 1974-10-10

Family

ID=22878317

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2124573A IT981160B (it) 1972-03-10 1973-03-06 Dispositivo semiconduttore a barriera schottky

Country Status (7)

Country Link
JP (1) JPS5132541B2 (it)
BE (1) BE796577A (it)
CA (1) CA973978A (it)
DE (1) DE2311170A1 (it)
FR (1) FR2175889A1 (it)
GB (1) GB1412879A (it)
IT (1) IT981160B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51138147U (it) * 1975-04-30 1976-11-08
US4119446A (en) * 1977-08-11 1978-10-10 Motorola Inc. Method for forming a guarded Schottky barrier diode by ion-implantation
JPS6038780U (ja) * 1983-08-24 1985-03-18 西川 忠蔵 スライド写真の台紙
JP2008177369A (ja) * 2007-01-18 2008-07-31 Sumitomo Electric Ind Ltd ショットキバリアダイオード
JP2016139698A (ja) * 2015-01-27 2016-08-04 フェニテックセミコンダクター株式会社 炭化珪素半導体装置の製造方法及び炭化珪素半導体装置
WO2018150451A1 (ja) * 2017-02-14 2018-08-23 三菱電機株式会社 電力用半導体装置

Also Published As

Publication number Publication date
JPS5132541B2 (it) 1976-09-13
JPS48103275A (it) 1973-12-25
FR2175889A1 (it) 1973-10-26
DE2311170A1 (de) 1973-09-13
CA973978A (en) 1975-09-02
BE796577A (fr) 1973-07-02
GB1412879A (en) 1975-11-05

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