GB1412879A - Shcottky barrier semiconductor device - Google Patents
Shcottky barrier semiconductor deviceInfo
- Publication number
- GB1412879A GB1412879A GB1070473A GB1070473A GB1412879A GB 1412879 A GB1412879 A GB 1412879A GB 1070473 A GB1070473 A GB 1070473A GB 1070473 A GB1070473 A GB 1070473A GB 1412879 A GB1412879 A GB 1412879A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- march
- chromium
- gold
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 230000004888 barrier function Effects 0.000 title abstract 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical group [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000354 decomposition reaction Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1412879 Schottky diodes RCA CORPORATION 6 March 1973 [10 March 1972] 10704/73 Heading H1K A Schottky diode comprises a first semiconductor layer 14 e.g. of N type, a superposed apertured layer of opposite conductivity type 16, and a metal layer 20 forming a Schottky barrier with the layer exposed in the aperture and an ohmic contact with the other layer 16 which acts as a guard ring. In the device shown layers 14 and 16 are deposited epitaxially on low resistivity substrate 12 the layer 16 being subsequently reduced to annular form with tapering inner and outer peripheries by photoresist and etching techniques. Electrode layer 20 which may be chromium, aluminium, or rhodium if the semiconductor is silicon, gold or chromium if it is germanium, or gold if it is gallium arsenide, is deposited by vacuum evaporation, pyrolytic decomposition of a compound, or sputtering.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23369372A | 1972-03-10 | 1972-03-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1412879A true GB1412879A (en) | 1975-11-05 |
Family
ID=22878317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1070473A Expired GB1412879A (en) | 1972-03-10 | 1973-03-06 | Shcottky barrier semiconductor device |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5132541B2 (en) |
| BE (1) | BE796577A (en) |
| CA (1) | CA973978A (en) |
| DE (1) | DE2311170A1 (en) |
| FR (1) | FR2175889A1 (en) |
| GB (1) | GB1412879A (en) |
| IT (1) | IT981160B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249432A (en) * | 2017-02-14 | 2019-09-17 | 三菱电机株式会社 | Power semiconductor device |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51138147U (en) * | 1975-04-30 | 1976-11-08 | ||
| US4119446A (en) * | 1977-08-11 | 1978-10-10 | Motorola Inc. | Method for forming a guarded Schottky barrier diode by ion-implantation |
| JPS6038780U (en) * | 1983-08-24 | 1985-03-18 | 西川 忠蔵 | slide photo mount |
| JP2008177369A (en) * | 2007-01-18 | 2008-07-31 | Sumitomo Electric Ind Ltd | Schottky barrier diode |
| JP2016139698A (en) * | 2015-01-27 | 2016-08-04 | フェニテックセミコンダクター株式会社 | Method for manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device |
-
1973
- 1973-02-05 CA CA162,906A patent/CA973978A/en not_active Expired
- 1973-03-06 IT IT2124573A patent/IT981160B/en active
- 1973-03-06 GB GB1070473A patent/GB1412879A/en not_active Expired
- 1973-03-07 DE DE19732311170 patent/DE2311170A1/en active Pending
- 1973-03-09 JP JP2844673A patent/JPS5132541B2/ja not_active Expired
- 1973-03-09 FR FR7308622A patent/FR2175889A1/fr not_active Withdrawn
- 1973-03-09 BE BE128632A patent/BE796577A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110249432A (en) * | 2017-02-14 | 2019-09-17 | 三菱电机株式会社 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2311170A1 (en) | 1973-09-13 |
| JPS5132541B2 (en) | 1976-09-13 |
| IT981160B (en) | 1974-10-10 |
| JPS48103275A (en) | 1973-12-25 |
| CA973978A (en) | 1975-09-02 |
| FR2175889A1 (en) | 1973-10-26 |
| BE796577A (en) | 1973-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |