GB1426395A - Semiconductor devices having a schottky junction - Google Patents

Semiconductor devices having a schottky junction

Info

Publication number
GB1426395A
GB1426395A GB3017673A GB3017673A GB1426395A GB 1426395 A GB1426395 A GB 1426395A GB 3017673 A GB3017673 A GB 3017673A GB 3017673 A GB3017673 A GB 3017673A GB 1426395 A GB1426395 A GB 1426395A
Authority
GB
United Kingdom
Prior art keywords
layer
metal
semi
conductor
schottky
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3017673A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1426395A publication Critical patent/GB1426395A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/47—Schottky barrier electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

1426395 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 26 June 1973 [29 June 1972] 30176/73 Heading H1K The barrier height of a Schottky junction between a region of a semi-conductor body and a first metal layer on which is located a second metal layer which does not directly contact the semi-conductor is made higher than that which either of the two metals would exhibit individually with the semi-conductor region. Preferably the metal of the first layer has a smaller individual barrier height with the semiconductor region than the metal of the second layer. Examples are A1 on Ni or Co on N-type Si. The two metals are successively vacuum deposited, preferably without breaking the vacuum between the two deposition stages, and the increase in barrier height is achieved by heating, preferably at substantially 500‹ C. for the examples quoted above. More than two metal layers may contribute to the Schottky contact, and a layer of Au may be situated on the uppermost of these metal layers. The invention is applicable to Schottky diode manufacture, but the embodiment illustrated is a field effect transistor formed in a body comprising an N-type Si epitaxial layer 3 on a P-type substrate 16. Phosphorus-diffused N<SP>+</SP>-type source and drain regions 17, 18 extend through the layer 3. A reverse-biased PN junction 23 between the layer 3 and the substrate 16 determines the lower limit of the channel, while the upper limit is defined by the Schottky barrier gate 20, formed in accordance with the invention. Source and drain electrodes 20, 21 are formed in the same manner as the gate 20 but, because of the heavy doping of the regions 17, 18, are ohmic.
GB3017673A 1972-06-29 1973-06-26 Semiconductor devices having a schottky junction Expired GB1426395A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7208995A NL7208995A (en) 1972-06-29 1972-06-29

Publications (1)

Publication Number Publication Date
GB1426395A true GB1426395A (en) 1976-02-25

Family

ID=19816412

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3017673A Expired GB1426395A (en) 1972-06-29 1973-06-26 Semiconductor devices having a schottky junction

Country Status (6)

Country Link
JP (1) JPS557950B2 (en)
CA (1) CA983176A (en)
DE (1) DE2329915A1 (en)
FR (1) FR2191268A1 (en)
GB (1) GB1426395A (en)
NL (1) NL7208995A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2631369B2 (en) * 1987-01-19 1997-07-16 三菱電機株式会社 Semiconductor device
KR101896332B1 (en) * 2016-12-13 2018-09-07 현대자동차 주식회사 Semiconductor device and method manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication

Also Published As

Publication number Publication date
FR2191268A1 (en) 1974-02-01
DE2329915A1 (en) 1974-01-17
JPS4952969A (en) 1974-05-23
CA983176A (en) 1976-02-03
JPS557950B2 (en) 1980-02-29
NL7208995A (en) 1974-01-02

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee