IT983646B - Dispositivo fotoelettrico a semiconduttore - Google Patents
Dispositivo fotoelettrico a semiconduttoreInfo
- Publication number
- IT983646B IT983646B IT22558/73A IT2255873A IT983646B IT 983646 B IT983646 B IT 983646B IT 22558/73 A IT22558/73 A IT 22558/73A IT 2255873 A IT2255873 A IT 2255873A IT 983646 B IT983646 B IT 983646B
- Authority
- IT
- Italy
- Prior art keywords
- photoelectric device
- semiconductor photoelectric
- semiconductor
- photoelectric
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/02—Contacts, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3417472A JPS5546070B2 (it) | 1972-04-04 | 1972-04-04 | |
JP47098248A JPS5212075B2 (it) | 1972-09-30 | 1972-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT983646B true IT983646B (it) | 1974-11-11 |
Family
ID=26372960
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT22558/73A IT983646B (it) | 1972-04-04 | 1973-04-04 | Dispositivo fotoelettrico a semiconduttore |
Country Status (5)
Country | Link |
---|---|
US (1) | US4005468A (it) |
CA (1) | CA992186A (it) |
FR (1) | FR2179125B1 (it) |
GB (1) | GB1419143A (it) |
IT (1) | IT983646B (it) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4262411A (en) * | 1977-09-08 | 1981-04-21 | Photon Power, Inc. | Method of making a solar cell array |
US4177093A (en) * | 1978-06-27 | 1979-12-04 | Exxon Research & Engineering Co. | Method of fabricating conducting oxide-silicon solar cells utilizing electron beam sublimation and deposition of the oxide |
US4193821A (en) * | 1978-08-14 | 1980-03-18 | Exxon Research & Engineering Co. | Fabrication of heterojunction solar cells by improved tin oxide deposition on insulating layer |
US4485264A (en) * | 1982-11-09 | 1984-11-27 | Energy Conversion Devices, Inc. | Isolation layer for photovoltaic device and method of producing same |
US4881110A (en) * | 1985-07-25 | 1989-11-14 | Hughes Aircraft Company | Double-Schottky diode liquid crystal light valve |
US5066614A (en) * | 1988-11-21 | 1991-11-19 | Honeywell Inc. | Method of manufacturing a leadframe having conductive elements preformed with solder bumps |
US5161729A (en) * | 1988-11-21 | 1992-11-10 | Honeywell Inc. | Package to semiconductor chip active interconnect site method |
US5698262A (en) * | 1996-05-06 | 1997-12-16 | Libbey-Owens-Ford Co. | Method for forming tin oxide coating on glass |
KR20150102761A (ko) * | 2013-08-29 | 2015-09-08 | 삼성디스플레이 주식회사 | 주석 산화물 반도체 박막의 형성 방법 |
CN110098203A (zh) * | 2018-01-30 | 2019-08-06 | 维深半导体公司 | 背照式图像传感器及其制备 |
US20230328162A1 (en) * | 2020-04-07 | 2023-10-12 | Amosense Co., Ltd. | Folding plate and manufacturing method therefor |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL128768C (it) * | 1960-12-09 | |||
FR1409894A (fr) * | 1964-07-23 | 1965-09-03 | Electronique & Automatisme Sa | Dispositif opto-électronique perfectionné |
US3391282A (en) * | 1965-02-19 | 1968-07-02 | Fairchild Camera Instr Co | Variable length photodiode using an inversion plate |
US3381183A (en) * | 1965-06-21 | 1968-04-30 | Rca Corp | High power multi-emitter transistor |
US3596151A (en) * | 1966-06-10 | 1971-07-27 | Electro Tec Corp | Constant sensitivity photoconductor detector with a tin oxide-semiconductor rectifying junction |
US3541679A (en) * | 1967-05-18 | 1970-11-24 | Nasa | Method of attaching a cover glass to a silicon solar cell |
US3566217A (en) * | 1968-10-01 | 1971-02-23 | Globe Union Inc | Electrical component and method of manufacture |
US3553541A (en) * | 1969-04-17 | 1971-01-05 | Bell Telephone Labor Inc | Bilateral switch using combination of field effect transistors and bipolar transistors |
US3636418A (en) * | 1969-08-06 | 1972-01-18 | Rca Corp | Epitaxial semiconductor device having adherent bonding pads |
US3622844A (en) * | 1969-08-18 | 1971-11-23 | Texas Instruments Inc | Avalanche photodiode utilizing schottky-barrier configurations |
CA918297A (en) * | 1969-09-24 | 1973-01-02 | Tanimura Shigeru | Semiconductor device and method of making |
NL6914593A (it) * | 1969-09-26 | 1971-03-30 | ||
US3806779A (en) * | 1969-10-02 | 1974-04-23 | Omron Tateisi Electronics Co | Semiconductor device and method of making same |
DE2049507C3 (de) * | 1970-10-08 | 1979-11-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Lichtempfindliche Halbleiteranordnung |
CA920280A (en) * | 1970-11-16 | 1973-01-30 | Omron Tateisi Electronics Co. | Semiconductive transducer |
US3755752A (en) * | 1971-04-26 | 1973-08-28 | Raytheon Co | Back-to-back semiconductor high frequency device |
-
1973
- 1973-03-28 GB GB1494673A patent/GB1419143A/en not_active Expired
- 1973-04-03 US US05/347,427 patent/US4005468A/en not_active Expired - Lifetime
- 1973-04-03 CA CA167,797A patent/CA992186A/en not_active Expired
- 1973-04-04 FR FR7312178A patent/FR2179125B1/fr not_active Expired
- 1973-04-04 IT IT22558/73A patent/IT983646B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2179125B1 (it) | 1976-05-21 |
CA992186A (en) | 1976-06-29 |
FR2179125A1 (it) | 1973-11-16 |
DE2316290B2 (de) | 1977-03-10 |
US4005468A (en) | 1977-01-25 |
DE2316290A1 (de) | 1973-10-18 |
GB1419143A (en) | 1975-12-24 |
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