DE2215151C3 - Verfahren zum Herstellen von dünnen Schichten aus Tantal - Google Patents
Verfahren zum Herstellen von dünnen Schichten aus TantalInfo
- Publication number
- DE2215151C3 DE2215151C3 DE2215151A DE2215151A DE2215151C3 DE 2215151 C3 DE2215151 C3 DE 2215151C3 DE 2215151 A DE2215151 A DE 2215151A DE 2215151 A DE2215151 A DE 2215151A DE 2215151 C3 DE2215151 C3 DE 2215151C3
- Authority
- DE
- Germany
- Prior art keywords
- tantalum
- cathode
- thin layers
- substrate
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims description 21
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 11
- 239000000758 substrate Substances 0.000 claims description 16
- 238000004544 sputter deposition Methods 0.000 claims description 14
- 239000007789 gas Substances 0.000 claims description 9
- 238000000889 atomisation Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000011521 glass Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010411 cooking Methods 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010410 dusting Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
- C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/25—Metals
- C03C2217/263—Metals other than noble metals, Cu or Hg
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/10—Deposition methods
- C03C2218/15—Deposition methods from the vapour phase
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2215151A DE2215151C3 (de) | 1972-03-28 | 1972-03-28 | Verfahren zum Herstellen von dünnen Schichten aus Tantal |
| CH1709172A CH582754A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-28 | 1972-11-23 | |
| FR7245661A FR2177708B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-28 | 1972-12-21 | |
| GB9873A GB1400371A (en) | 1972-03-28 | 1973-01-01 | Production of thin films of tantalum |
| US344194A US3878079A (en) | 1972-03-28 | 1973-03-23 | Method of producing thin tantalum films |
| CA167,146A CA1014518A (en) | 1972-03-28 | 1973-03-27 | Production of thin films of tantalum |
| IT22188/73A IT983627B (it) | 1972-03-28 | 1973-03-27 | Procedimento per formare sottili strati di tantalio su substrati isolanti |
| JP48034758A JPS498425A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-28 | 1973-03-28 | |
| NL7304329A NL7304329A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1972-03-28 | 1973-03-28 | |
| BE129374A BE797454A (fr) | 1972-03-28 | 1973-03-28 | Procede de fabrication de couches minces de tantale et couches obtenues |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2215151A DE2215151C3 (de) | 1972-03-28 | 1972-03-28 | Verfahren zum Herstellen von dünnen Schichten aus Tantal |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2215151A1 DE2215151A1 (de) | 1973-10-04 |
| DE2215151B2 DE2215151B2 (de) | 1978-09-28 |
| DE2215151C3 true DE2215151C3 (de) | 1979-05-23 |
Family
ID=5840438
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2215151A Expired DE2215151C3 (de) | 1972-03-28 | 1972-03-28 | Verfahren zum Herstellen von dünnen Schichten aus Tantal |
Country Status (10)
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5654207A (en) * | 1903-02-03 | 1997-08-05 | Sharp Kabushiki Kaisha | Method of making two-terminal nonlinear device and liquid crystal apparatus including the same |
| CA1014889A (en) * | 1974-12-06 | 1977-08-02 | Bell-Northern Research Ltd. | Sputtered dielectric thin films |
| US4006073A (en) * | 1975-04-03 | 1977-02-01 | The United States Of America As Represented By The United States Energy Research And Development Administration | Thin film deposition by electric and magnetic crossed-field diode sputtering |
| US4025410A (en) * | 1975-08-25 | 1977-05-24 | Western Electric Company, Inc. | Sputtering apparatus and methods using a magnetic field |
| US4036708A (en) * | 1976-05-13 | 1977-07-19 | Bell Telephone Laboratories, Incorporated | Technique for nucleating b.c.c. tantalum films on insulating substrates |
| US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
| JPS6285062A (ja) * | 1985-10-09 | 1987-04-18 | ユニチカ株式会社 | 長繊維からなるウエブの製造方法 |
| US5506037A (en) * | 1989-12-09 | 1996-04-09 | Saint Gobain Vitrage International | Heat-reflecting and/or electrically heatable laminated glass pane |
| DE3940748A1 (de) * | 1989-12-09 | 1991-06-13 | Ver Glaswerke Gmbh | Elektrisch beheizbare autoglasscheibe aus verbundglas |
| FR2657343B1 (fr) * | 1990-01-19 | 1993-01-29 | Saint Gobain Vitrage Int | Couche mince pour vitrage de protection solaire. |
| JPH03248568A (ja) * | 1990-02-27 | 1991-11-06 | Fuji Xerox Co Ltd | 薄膜半導体装置 |
| JPH0819516B2 (ja) * | 1990-10-26 | 1996-02-28 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 薄膜状のアルファＴａを形成するための方法および構造 |
| US5221449A (en) * | 1990-10-26 | 1993-06-22 | International Business Machines Corporation | Method of making Alpha-Ta thin films |
| US5281554A (en) * | 1991-02-08 | 1994-01-25 | Sharp Kabushiki Kaisha | Method for producing a semiconductor device having a tantalum thin film |
| JP2741814B2 (ja) * | 1991-12-26 | 1998-04-22 | シャープ株式会社 | タンタル金属薄膜の製造方法 |
| US6355146B1 (en) * | 1996-04-03 | 2002-03-12 | The Regents Of The University Of California | Sputtering process and apparatus for coating powders |
| US6139699A (en) * | 1997-05-27 | 2000-10-31 | Applied Materials, Inc. | Sputtering methods for depositing stress tunable tantalum and tantalum nitride films |
| US20050272254A1 (en) * | 1997-11-26 | 2005-12-08 | Applied Materials, Inc. | Method of depositing low resistivity barrier layers for copper interconnects |
| US7253109B2 (en) * | 1997-11-26 | 2007-08-07 | Applied Materials, Inc. | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system |
| US6911124B2 (en) * | 1998-09-24 | 2005-06-28 | Applied Materials, Inc. | Method of depositing a TaN seed layer |
| TW520551B (en) | 1998-09-24 | 2003-02-11 | Applied Materials Inc | Method for fabricating ultra-low resistivity tantalum films |
| US6348113B1 (en) | 1998-11-25 | 2002-02-19 | Cabot Corporation | High purity tantalum, products containing the same, and methods of making the same |
| JP3402313B2 (ja) * | 2000-07-05 | 2003-05-06 | 株式会社村田製作所 | 弾性表面波装置の製造方法 |
| KR20040015670A (ko) * | 2001-01-24 | 2004-02-19 | 트리콘 호울딩즈 리미티드 | 탄탈륨 필름 침착방법 |
| DK174876B1 (da) * | 2001-02-26 | 2004-01-12 | Danfoss As | Implantat og implantatoverflademodificeringsproces |
| US7214295B2 (en) | 2001-04-09 | 2007-05-08 | Vishay Dale Electronics, Inc. | Method for tantalum pentoxide moisture barrier in film resistors |
| US6926390B2 (en) * | 2003-02-05 | 2005-08-09 | Hewlett-Packard Development Company, L.P. | Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same |
| US6893116B2 (en) | 2003-04-29 | 2005-05-17 | Hewlett-Packard Development Company, L.P. | Fluid ejection device with compressive alpha-tantalum layer |
| US6955835B2 (en) * | 2003-04-30 | 2005-10-18 | Hewlett-Packard Development Company, L.P. | Method for forming compressive alpha-tantalum on substrates and devices including the same |
| JP3646723B2 (ja) * | 2003-08-12 | 2005-05-11 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
| EP1730072A2 (en) * | 2004-03-24 | 2006-12-13 | H.C. Starck Inc. | Methods of forming alpha and beta tantalum films with controlled and new microstructures |
| JPWO2011010655A1 (ja) * | 2009-07-21 | 2013-01-07 | 株式会社アルバック | αタンタルからなる被膜の成膜方法、及びその被膜 |
| CN110499493B (zh) * | 2019-08-30 | 2021-08-31 | 西安工程大学 | 一种制备可抑制杀菌活性的Ta2O5@Ag双相微纳结构的方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3258413A (en) * | 1961-12-20 | 1966-06-28 | Bell Telephone Labor Inc | Method for the fabrication of tantalum film resistors |
| US3395089A (en) * | 1964-12-14 | 1968-07-30 | Bell Telephone Labor Inc | Method of depositing films of controlled specific resistivity and temperature coefficient of resistance using cathode sputtering |
-
1972
- 1972-03-28 DE DE2215151A patent/DE2215151C3/de not_active Expired
- 1972-11-23 CH CH1709172A patent/CH582754A5/xx not_active IP Right Cessation
- 1972-12-21 FR FR7245661A patent/FR2177708B1/fr not_active Expired
-
1973
- 1973-01-01 GB GB9873A patent/GB1400371A/en not_active Expired
- 1973-03-23 US US344194A patent/US3878079A/en not_active Expired - Lifetime
- 1973-03-27 CA CA167,146A patent/CA1014518A/en not_active Expired
- 1973-03-27 IT IT22188/73A patent/IT983627B/it active
- 1973-03-28 NL NL7304329A patent/NL7304329A/xx not_active Application Discontinuation
- 1973-03-28 JP JP48034758A patent/JPS498425A/ja active Pending
- 1973-03-28 BE BE129374A patent/BE797454A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE797454A (fr) | 1973-07-16 |
| NL7304329A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-10-02 |
| GB1400371A (en) | 1975-07-16 |
| US3878079A (en) | 1975-04-15 |
| CA1014518A (en) | 1977-07-26 |
| DE2215151B2 (de) | 1978-09-28 |
| JPS498425A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1974-01-25 |
| IT983627B (it) | 1974-11-11 |
| FR2177708A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1973-11-09 |
| DE2215151A1 (de) | 1973-10-04 |
| FR2177708B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1975-01-03 |
| CH582754A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1976-12-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| EHJ | Ceased/non-payment of the annual fee |