IT983627B - Procedimento per formare sottili strati di tantalio su substrati isolanti - Google Patents

Procedimento per formare sottili strati di tantalio su substrati isolanti

Info

Publication number
IT983627B
IT983627B IT22188/73A IT2218873A IT983627B IT 983627 B IT983627 B IT 983627B IT 22188/73 A IT22188/73 A IT 22188/73A IT 2218873 A IT2218873 A IT 2218873A IT 983627 B IT983627 B IT 983627B
Authority
IT
Italy
Prior art keywords
tantalum
procedure
thin layers
insulating substrates
forming thin
Prior art date
Application number
IT22188/73A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of IT983627B publication Critical patent/IT983627B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/06—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals
    • C03C17/09—Surface treatment of glass, not in the form of fibres or filaments, by coating with metals by deposition from the vapour phase
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/20—Materials for coating a single layer on glass
    • C03C2217/25—Metals
    • C03C2217/263—Metals other than noble metals, Cu or Hg
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/10—Deposition methods
    • C03C2218/15—Deposition methods from the vapour phase

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
IT22188/73A 1972-03-28 1973-03-27 Procedimento per formare sottili strati di tantalio su substrati isolanti IT983627B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2215151A DE2215151C3 (de) 1972-03-28 1972-03-28 Verfahren zum Herstellen von dünnen Schichten aus Tantal

Publications (1)

Publication Number Publication Date
IT983627B true IT983627B (it) 1974-11-11

Family

ID=5840438

Family Applications (1)

Application Number Title Priority Date Filing Date
IT22188/73A IT983627B (it) 1972-03-28 1973-03-27 Procedimento per formare sottili strati di tantalio su substrati isolanti

Country Status (10)

Country Link
US (1) US3878079A (it)
JP (1) JPS498425A (it)
BE (1) BE797454A (it)
CA (1) CA1014518A (it)
CH (1) CH582754A5 (it)
DE (1) DE2215151C3 (it)
FR (1) FR2177708B1 (it)
GB (1) GB1400371A (it)
IT (1) IT983627B (it)
NL (1) NL7304329A (it)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5654207A (en) * 1903-02-03 1997-08-05 Sharp Kabushiki Kaisha Method of making two-terminal nonlinear device and liquid crystal apparatus including the same
CA1014889A (en) * 1974-12-06 1977-08-02 Bell-Northern Research Ltd. Sputtered dielectric thin films
US4006073A (en) * 1975-04-03 1977-02-01 The United States Of America As Represented By The United States Energy Research And Development Administration Thin film deposition by electric and magnetic crossed-field diode sputtering
US4025410A (en) * 1975-08-25 1977-05-24 Western Electric Company, Inc. Sputtering apparatus and methods using a magnetic field
US4036708A (en) * 1976-05-13 1977-07-19 Bell Telephone Laboratories, Incorporated Technique for nucleating b.c.c. tantalum films on insulating substrates
US4647361A (en) * 1985-09-03 1987-03-03 International Business Machines Corporation Sputtering apparatus
JPS6285062A (ja) * 1985-10-09 1987-04-18 ユニチカ株式会社 長繊維からなるウエブの製造方法
DE3940748A1 (de) * 1989-12-09 1991-06-13 Ver Glaswerke Gmbh Elektrisch beheizbare autoglasscheibe aus verbundglas
US5506037A (en) * 1989-12-09 1996-04-09 Saint Gobain Vitrage International Heat-reflecting and/or electrically heatable laminated glass pane
FR2657343B1 (fr) * 1990-01-19 1993-01-29 Saint Gobain Vitrage Int Couche mince pour vitrage de protection solaire.
JPH03248568A (ja) * 1990-02-27 1991-11-06 Fuji Xerox Co Ltd 薄膜半導体装置
WO1992007968A1 (en) * 1990-10-26 1992-05-14 International Business Machines Corporation STRUCTURE AND METHOD OF MAKING ALPHA-Ta IN THIN FILMS
US5221449A (en) * 1990-10-26 1993-06-22 International Business Machines Corporation Method of making Alpha-Ta thin films
US5281554A (en) * 1991-02-08 1994-01-25 Sharp Kabushiki Kaisha Method for producing a semiconductor device having a tantalum thin film
JP2741814B2 (ja) * 1991-12-26 1998-04-22 シャープ株式会社 タンタル金属薄膜の製造方法
US6355146B1 (en) * 1996-04-03 2002-03-12 The Regents Of The University Of California Sputtering process and apparatus for coating powders
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
US6911124B2 (en) * 1998-09-24 2005-06-28 Applied Materials, Inc. Method of depositing a TaN seed layer
US7253109B2 (en) * 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US20050272254A1 (en) * 1997-11-26 2005-12-08 Applied Materials, Inc. Method of depositing low resistivity barrier layers for copper interconnects
TWI223873B (en) 1998-09-24 2004-11-11 Applied Materials Inc Nitrogen-containing tantalum films
US6348113B1 (en) * 1998-11-25 2002-02-19 Cabot Corporation High purity tantalum, products containing the same, and methods of making the same
JP3402313B2 (ja) * 2000-07-05 2003-05-06 株式会社村田製作所 弾性表面波装置の製造方法
DK174876B1 (da) * 2001-02-26 2004-01-12 Danfoss As Implantat og implantatoverflademodificeringsproces
US7214295B2 (en) 2001-04-09 2007-05-08 Vishay Dale Electronics, Inc. Method for tantalum pentoxide moisture barrier in film resistors
JP4181035B2 (ja) * 2001-07-19 2008-11-12 アビザ ヨーロッパ リミティド タンタル膜の堆積
US6926390B2 (en) * 2003-02-05 2005-08-09 Hewlett-Packard Development Company, L.P. Method of forming mixed-phase compressive tantalum thin films using nitrogen residual gas, thin films and fluid ejection devices including same
US6893116B2 (en) 2003-04-29 2005-05-17 Hewlett-Packard Development Company, L.P. Fluid ejection device with compressive alpha-tantalum layer
US6955835B2 (en) * 2003-04-30 2005-10-18 Hewlett-Packard Development Company, L.P. Method for forming compressive alpha-tantalum on substrates and devices including the same
JP3646723B2 (ja) * 2003-08-12 2005-05-11 セイコーエプソン株式会社 半導体装置の製造方法
CN1984839A (zh) * 2004-03-24 2007-06-20 H.C.施塔克公司 形成具有可控和新型微观结构的α和β钽薄膜的方法
WO2011010655A1 (ja) * 2009-07-21 2011-01-27 株式会社アルバック αタンタルからなる被膜の成膜方法、及びその被膜
CN110499493B (zh) * 2019-08-30 2021-08-31 西安工程大学 一种制备可抑制杀菌活性的Ta2O5@Ag双相微纳结构的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3258413A (en) * 1961-12-20 1966-06-28 Bell Telephone Labor Inc Method for the fabrication of tantalum film resistors
US3395089A (en) * 1964-12-14 1968-07-30 Bell Telephone Labor Inc Method of depositing films of controlled specific resistivity and temperature coefficient of resistance using cathode sputtering

Also Published As

Publication number Publication date
DE2215151B2 (de) 1978-09-28
CA1014518A (en) 1977-07-26
DE2215151C3 (de) 1979-05-23
JPS498425A (it) 1974-01-25
DE2215151A1 (de) 1973-10-04
FR2177708B1 (it) 1975-01-03
CH582754A5 (it) 1976-12-15
US3878079A (en) 1975-04-15
BE797454A (fr) 1973-07-16
GB1400371A (en) 1975-07-16
FR2177708A1 (it) 1973-11-09
NL7304329A (it) 1973-10-02

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