JP4181035B2 - タンタル膜の堆積 - Google Patents
タンタル膜の堆積 Download PDFInfo
- Publication number
- JP4181035B2 JP4181035B2 JP2003514971A JP2003514971A JP4181035B2 JP 4181035 B2 JP4181035 B2 JP 4181035B2 JP 2003514971 A JP2003514971 A JP 2003514971A JP 2003514971 A JP2003514971 A JP 2003514971A JP 4181035 B2 JP4181035 B2 JP 4181035B2
- Authority
- JP
- Japan
- Prior art keywords
- tantalum
- layer
- film
- seed layer
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052715 tantalum Inorganic materials 0.000 title claims description 63
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 57
- 230000008021 deposition Effects 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims description 44
- 238000000151 deposition Methods 0.000 claims description 33
- 238000004544 sputter deposition Methods 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 25
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 21
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 21
- 238000005530 etching Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000001257 hydrogen Substances 0.000 claims description 9
- 229910052739 hydrogen Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 2
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 2
- 150000002894 organic compounds Chemical class 0.000 claims description 2
- 239000011368 organic material Substances 0.000 claims description 2
- 239000007800 oxidant agent Substances 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 67
- 239000010408 film Substances 0.000 description 43
- 235000012431 wafers Nutrition 0.000 description 17
- 230000008569 process Effects 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000002474 experimental method Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 8
- 210000003491 skin Anatomy 0.000 description 7
- 229910052786 argon Inorganic materials 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000010899 nucleation Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 150000003481 tantalum Chemical class 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910004166 TaN Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001721 carbon Chemical class 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical group [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 210000002615 epidermis Anatomy 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76873—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for electroplating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76871—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers
- H01L21/76876—Layers specifically deposited to enhance or enable the nucleation of further layers, i.e. seed layers for deposition from the gas phase, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Physical Vapour Deposition (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
- Electrodes Of Semiconductors (AREA)
- Electroplating Methods And Accessories (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Description
13kWの直流ターゲット電力
100sccmのアルゴン
300W、13.56MHzの高周波バイアス電力をプラテンに供給し、約75Vの負の電圧を印加
ターゲットマグネトロン封じ込め磁気コイルに、1360アンペア・回数の電力を供給
150nmの堆積に対して、46秒間の処理時間
プラテンコイルに320アンペア・回数の電力を供給して、均一性を改良
13kWの直流ターゲット電力
100sccmのアルゴン
基材プラテンへの電力供給なし、ターゲットマグネトロンの磁場封じ込めなし
140nmの堆積に対して、29秒間の処理時間
HFと同様であるが、100W、13.56MHzの高周波バイアス電力をプラテンに供給し、約78Vの負の電圧を印加
150nmの堆積に対して、33秒間の処理時間
βタンタルに堆積させた銅シード層={111}/{200}=61
Claims (14)
- 有機物質含有低誘電率絶縁材料であって、炭素でドープされた水素化二酸化ケイ素であるシード層を堆積させること、及び250℃未満の温度においてこのシード層上にタンタルをスパッタリングすることを含む、300nm未満の厚さで、α−Taに基づくTa膜を堆積させる方法。
- 前記シード層がメチルでドープされた酸化ケイ素である、請求項1に記載の方法。
- ケイ素含有有機化合物と酸化剤を、プラズマの存在下で反応させ、そして炭素を有する基がこの膜に含有されるようにして得られた膜を硬化させることによって、前記シード層を形成する、請求項1又は2に記載の方法。
- 前記シード層を、水素含有プラズマに露出させることによって硬化させる、請求項3に記載の方法。
- 前記シード層の表面をエッチングによって除去した後でタンタルの堆積を行う、請求項1〜4のいずれかに記載の方法。
- 前記シード層を加熱した後でタンタルを堆積させる、請求項1〜5のいずれかに記載の方法。
- 前記タンタルの供給源と基材との距離が少なくとも200mmである、請求項1〜6のいずれかに記載の方法。
- 前記タンタルの供給源と基材との距離が200mm〜250mmである、請求項1〜7のいずれかに記載の方法。
- 前記タンタルの堆積を不均衡マグネトロンスパッタリングによって行う、請求項1〜8のいずれかに記載の方法。
- 前記基材がバイアスされている、請求項1〜9のいずれかに記載の方法。
- 前記タンタル膜上に銅を堆積させる、請求項1〜10のいずれかに記載の方法。
- 前記シード層がダマシン構造中の誘電体層である、請求項1〜11のいずれかに記載の方法。
- タンタル材料が、300nm未満の厚さで、α−Taに基づくTa膜を堆積させるように、イオン状態で前記シード層に達する、請求項1〜12のいずれかに記載の方法。
- 半導体ウェハー等の凹凸を有する表面にタンタル層を堆積させること、及びこのタンタル層に直接に銅層を電気メッキすることを含み、前記タンタル層の抵抗率が50μΩ・cm未満である、半導体ウェハー等の凹凸を有する表面に銅を電気メッキする方法であって、請求項1〜13のいずれかに記載の方法を使用して、前記タンタル層を堆積させる方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0117599A GB0117599D0 (en) | 2001-07-19 | 2001-07-19 | Depositing a tantalum film |
GB0201590A GB0201590D0 (en) | 2002-01-24 | 2002-01-24 | Depositing a tantalum film |
GB0206116A GB0206116D0 (en) | 2002-03-15 | 2002-03-15 | Depositing a tantalum file |
PCT/GB2002/003238 WO2003008660A1 (en) | 2001-07-19 | 2002-07-15 | Depositing a tantalum film |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004536463A JP2004536463A (ja) | 2004-12-02 |
JP2004536463A5 JP2004536463A5 (ja) | 2006-01-05 |
JP4181035B2 true JP4181035B2 (ja) | 2008-11-12 |
Family
ID=27256224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003514971A Expired - Fee Related JP4181035B2 (ja) | 2001-07-19 | 2002-07-15 | タンタル膜の堆積 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7129161B2 (ja) |
JP (1) | JP4181035B2 (ja) |
KR (1) | KR20040015670A (ja) |
GB (1) | GB2393189B (ja) |
TW (1) | TWI294918B (ja) |
WO (1) | WO2003008660A1 (ja) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2851181B1 (fr) * | 2003-02-17 | 2006-05-26 | Commissariat Energie Atomique | Procede de revetement d'une surface |
US7449345B2 (en) * | 2004-06-15 | 2008-11-11 | Headway Technologies, Inc. | Capping structure for enhancing dR/R of the MTJ device |
US7686928B2 (en) * | 2004-09-23 | 2010-03-30 | Applied Materials, Inc. | Pressure switched dual magnetron |
US7851360B2 (en) * | 2007-02-14 | 2010-12-14 | Intel Corporation | Organometallic precursors for seed/barrier processes and methods thereof |
US7858525B2 (en) * | 2007-03-30 | 2010-12-28 | Intel Corporation | Fluorine-free precursors and methods for the deposition of conformal conductive films for nanointerconnect seed and fill |
WO2011010655A1 (ja) * | 2009-07-21 | 2011-01-27 | 株式会社アルバック | αタンタルからなる被膜の成膜方法、及びその被膜 |
US20170170215A1 (en) * | 2015-12-15 | 2017-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device structure with anti-acid layer and method for forming the same |
CN108103463B (zh) * | 2016-11-25 | 2022-01-14 | 中国科学院金属研究所 | 一种体心立方钽涂层的制备方法 |
FR3099490B1 (fr) | 2019-08-02 | 2022-12-02 | X Fab France | Procédé de formation d’un film de tantale à basse résistivité |
CN111926289B (zh) * | 2020-08-19 | 2022-10-21 | 重庆文理学院 | 一种钽涂层制备方法 |
CN115458675B (zh) * | 2022-11-11 | 2023-04-18 | 阿里巴巴达摩院(杭州)科技有限公司 | 钽金属薄膜处理方法、量子器件及量子芯片 |
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-
2002
- 2002-07-15 KR KR1020027017672A patent/KR20040015670A/ko not_active Application Discontinuation
- 2002-07-15 JP JP2003514971A patent/JP4181035B2/ja not_active Expired - Fee Related
- 2002-07-15 GB GB0400103A patent/GB2393189B/en not_active Expired - Fee Related
- 2002-07-15 US US10/483,805 patent/US7129161B2/en not_active Expired - Lifetime
- 2002-07-15 WO PCT/GB2002/003238 patent/WO2003008660A1/en active Application Filing
- 2002-07-18 TW TW091116048A patent/TWI294918B/zh not_active IP Right Cessation
Also Published As
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GB0400103D0 (en) | 2004-02-04 |
US20050048775A1 (en) | 2005-03-03 |
GB2393189B (en) | 2005-06-15 |
JP2004536463A (ja) | 2004-12-02 |
GB2393189A (en) | 2004-03-24 |
WO2003008660A1 (en) | 2003-01-30 |
US7129161B2 (en) | 2006-10-31 |
KR20040015670A (ko) | 2004-02-19 |
TWI294918B (en) | 2008-03-21 |
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