DE2134528A1 - - Google Patents
Info
- Publication number
- DE2134528A1 DE2134528A1 DE19712134528 DE2134528A DE2134528A1 DE 2134528 A1 DE2134528 A1 DE 2134528A1 DE 19712134528 DE19712134528 DE 19712134528 DE 2134528 A DE2134528 A DE 2134528A DE 2134528 A1 DE2134528 A1 DE 2134528A1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- highly conductive
- gate
- semiconductor material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 claims description 29
- 230000005669 field effect Effects 0.000 claims description 23
- 239000000463 material Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 17
- 239000013078 crystal Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000000295 complement effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CH1309970A CH506188A (de) | 1970-09-02 | 1970-09-02 | Feldeffekt-Transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2134528A1 true DE2134528A1 (enrdf_load_stackoverflow) | 1972-04-13 |
| DE2134528B2 DE2134528B2 (de) | 1979-04-19 |
Family
ID=4389292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2134528A Ceased DE2134528B2 (de) | 1970-09-02 | 1971-07-10 | Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55913B1 (enrdf_load_stackoverflow) |
| CH (1) | CH506188A (enrdf_load_stackoverflow) |
| DE (1) | DE2134528B2 (enrdf_load_stackoverflow) |
| FR (1) | FR2105175B1 (enrdf_load_stackoverflow) |
| GB (1) | GB1332060A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH539360A (de) * | 1971-09-30 | 1973-07-15 | Ibm | Halbleiterschalt- oder Speichervorrichtung |
| CN114582835B (zh) * | 2022-05-05 | 2022-07-29 | 长鑫存储技术有限公司 | 反熔丝结构及其制作方法、反熔丝阵列、存储装置 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE14941C (de) * | M. MERKELBACH in Grenzhausen bei Coblenz | Thongefäfse mit durchsichtiger Wandung | ||
| DE1067936B (enrdf_load_stackoverflow) * | 1958-02-04 | 1959-10-29 | ||
| NL300609A (enrdf_load_stackoverflow) * | 1958-06-14 | 1967-06-26 | ||
| US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
| US3344322A (en) * | 1965-01-22 | 1967-09-26 | Hughes Aircraft Co | Metal-oxide-semiconductor field effect transistor |
| GB1172230A (en) * | 1965-12-16 | 1969-11-26 | Matsushita Electronics Corp | A Method of Manufacturing Semiconductor Device |
| CH461646A (de) * | 1967-04-18 | 1968-08-31 | Ibm | Feld-Effekt-Transistor und Verfahren zu seiner Herstellung |
| CH476398A (de) * | 1968-03-01 | 1969-07-31 | Ibm | Verfahren zur Herstellung feiner geätzter Muster |
| CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
-
1970
- 1970-09-02 CH CH1309970A patent/CH506188A/de not_active IP Right Cessation
-
1971
- 1971-07-06 FR FR7126003A patent/FR2105175B1/fr not_active Expired
- 1971-07-10 DE DE2134528A patent/DE2134528B2/de not_active Ceased
- 1971-08-06 JP JP5910871A patent/JPS55913B1/ja active Pending
- 1971-08-25 GB GB3985871A patent/GB1332060A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55913B1 (enrdf_load_stackoverflow) | 1980-01-10 |
| FR2105175B1 (enrdf_load_stackoverflow) | 1976-05-28 |
| DE2134528B2 (de) | 1979-04-19 |
| GB1332060A (en) | 1973-10-03 |
| CH506188A (de) | 1971-04-15 |
| FR2105175A1 (enrdf_load_stackoverflow) | 1972-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8235 | Patent refused |