CH506188A - Feldeffekt-Transistor - Google Patents

Feldeffekt-Transistor

Info

Publication number
CH506188A
CH506188A CH1309970A CH1309970A CH506188A CH 506188 A CH506188 A CH 506188A CH 1309970 A CH1309970 A CH 1309970A CH 1309970 A CH1309970 A CH 1309970A CH 506188 A CH506188 A CH 506188A
Authority
CH
Switzerland
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Application number
CH1309970A
Other languages
German (de)
English (en)
Inventor
Peter Dr Wolf
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Priority to CH1309970A priority Critical patent/CH506188A/de
Publication of CH506188A publication Critical patent/CH506188A/de
Priority to FR7126003A priority patent/FR2105175B1/fr
Priority to DE2134528A priority patent/DE2134528B2/de
Priority to JP5910871A priority patent/JPS55913B1/ja
Priority to GB3985871A priority patent/GB1332060A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36Unipolar devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
CH1309970A 1970-09-02 1970-09-02 Feldeffekt-Transistor CH506188A (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor
FR7126003A FR2105175B1 (enrdf_load_stackoverflow) 1970-09-02 1971-07-06
DE2134528A DE2134528B2 (de) 1970-09-02 1971-07-10 Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung
JP5910871A JPS55913B1 (enrdf_load_stackoverflow) 1970-09-02 1971-08-06
GB3985871A GB1332060A (en) 1970-09-02 1971-08-25 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Publications (1)

Publication Number Publication Date
CH506188A true CH506188A (de) 1971-04-15

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Country Status (5)

Country Link
JP (1) JPS55913B1 (enrdf_load_stackoverflow)
CH (1) CH506188A (enrdf_load_stackoverflow)
DE (1) DE2134528B2 (enrdf_load_stackoverflow)
FR (1) FR2105175B1 (enrdf_load_stackoverflow)
GB (1) GB1332060A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (de) * 1971-09-30 1973-04-19 Ibm Halbleiterschalt- oder speichervorrichtung

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114582835B (zh) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 反熔丝结构及其制作方法、反熔丝阵列、存储装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
DE1067936B (enrdf_load_stackoverflow) * 1958-02-04 1959-10-29
NL300609A (enrdf_load_stackoverflow) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2235465A1 (de) * 1971-09-30 1973-04-19 Ibm Halbleiterschalt- oder speichervorrichtung
FR2154538A1 (enrdf_load_stackoverflow) * 1971-09-30 1973-05-11 Ibm

Also Published As

Publication number Publication date
DE2134528A1 (enrdf_load_stackoverflow) 1972-04-13
JPS55913B1 (enrdf_load_stackoverflow) 1980-01-10
FR2105175B1 (enrdf_load_stackoverflow) 1976-05-28
DE2134528B2 (de) 1979-04-19
GB1332060A (en) 1973-10-03
FR2105175A1 (enrdf_load_stackoverflow) 1972-04-28

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Legal Events

Date Code Title Description
PL Patent ceased