FR2105175A1 - - Google Patents

Info

Publication number
FR2105175A1
FR2105175A1 FR7126003A FR7126003A FR2105175A1 FR 2105175 A1 FR2105175 A1 FR 2105175A1 FR 7126003 A FR7126003 A FR 7126003A FR 7126003 A FR7126003 A FR 7126003A FR 2105175 A1 FR2105175 A1 FR 2105175A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7126003A
Other languages
French (fr)
Other versions
FR2105175B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2105175A1 publication Critical patent/FR2105175A1/fr
Application granted granted Critical
Publication of FR2105175B1 publication Critical patent/FR2105175B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
FR7126003A 1970-09-02 1971-07-06 Expired FR2105175B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Publications (2)

Publication Number Publication Date
FR2105175A1 true FR2105175A1 (enrdf_load_stackoverflow) 1972-04-28
FR2105175B1 FR2105175B1 (enrdf_load_stackoverflow) 1976-05-28

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7126003A Expired FR2105175B1 (enrdf_load_stackoverflow) 1970-09-02 1971-07-06

Country Status (5)

Country Link
JP (1) JPS55913B1 (enrdf_load_stackoverflow)
CH (1) CH506188A (enrdf_load_stackoverflow)
DE (1) DE2134528B2 (enrdf_load_stackoverflow)
FR (1) FR2105175B1 (enrdf_load_stackoverflow)
GB (1) GB1332060A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
CN114582835B (zh) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 反熔丝结构及其制作方法、反熔丝阵列、存储装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
DE1089074B (de) * 1958-02-04 1960-09-15 Siemens Ag Verfahren zur Erzeugung eines hochdotierten p-Bereiches und des zugehoerigen Kontaktes einer Halbleiteranordnung mittels Einlegieren
FR1266703A (fr) * 1959-09-11 1961-07-17 Fairchild Semiconductor Circuits semi-conducteurs monoblocs
DE1114941B (de) * 1958-06-14 1961-10-12 Siemens Ag Verfahren zur Herstellung eines mit Bor dotierten Bereiches von einkristallinen Halbleiterkoerpern
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
FR1505766A (fr) * 1965-12-16 1967-12-15 Matsushita Electronics Corp Procédé de fabrication de diodes
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
DE1089074B (de) * 1958-02-04 1960-09-15 Siemens Ag Verfahren zur Erzeugung eines hochdotierten p-Bereiches und des zugehoerigen Kontaktes einer Halbleiteranordnung mittels Einlegieren
DE1114941B (de) * 1958-06-14 1961-10-12 Siemens Ag Verfahren zur Herstellung eines mit Bor dotierten Bereiches von einkristallinen Halbleiterkoerpern
FR1266703A (fr) * 1959-09-11 1961-07-17 Fairchild Semiconductor Circuits semi-conducteurs monoblocs
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
FR1505766A (fr) * 1965-12-16 1967-12-15 Matsushita Electronics Corp Procédé de fabrication de diodes
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
FR1557327A (enrdf_load_stackoverflow) * 1967-04-18 1969-02-14

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
RESEARCH AND DEVELOPMENT"VOLUME 14,MARS 1970,"SILICON AND SILICON-DIOXIDE PROCESSING FOR HIGH-FRE-QUENCY MESFET PREPARATION"T.O.MOHR PAGES 142-147. *
REVUE AMERICAINE IBM TECHNICAL DISCLOSURE BULLETIN VOLUME 13 AOUT 1970"FABRICATING A GATE FIELD-EFFECT TRANSISTOR".C.J.KIRCHER ET.AL.PAGES 646-648. *
REVUE AMERICAINE PROCEEDINGS OF THE IEEE VOLUME 57,MAI 1969"AN ION IMPLANTED IGFET USIN SCHOTTK Y BARRIERS"M.P.LEPSELTER ET AL.PAGES 812-813. *
REVUE AMERICAINE"JOURNAL OF THE ELECTROCHEMICAL SOCIETY",VOLUME 115,AOUT 1968"OHMIC CONTACTS FOR CA AS BULK-EFFECT DEVICES".C.PAOLA ET AL.PAGE 241 C *

Also Published As

Publication number Publication date
DE2134528B2 (de) 1979-04-19
DE2134528A1 (enrdf_load_stackoverflow) 1972-04-13
CH506188A (de) 1971-04-15
FR2105175B1 (enrdf_load_stackoverflow) 1976-05-28
JPS55913B1 (enrdf_load_stackoverflow) 1980-01-10
GB1332060A (en) 1973-10-03

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