FR2105175B1 - - Google Patents
Info
- Publication number
- FR2105175B1 FR2105175B1 FR7126003A FR7126003A FR2105175B1 FR 2105175 B1 FR2105175 B1 FR 2105175B1 FR 7126003 A FR7126003 A FR 7126003A FR 7126003 A FR7126003 A FR 7126003A FR 2105175 B1 FR2105175 B1 FR 2105175B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1309970A CH506188A (de) | 1970-09-02 | 1970-09-02 | Feldeffekt-Transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2105175A1 FR2105175A1 (enrdf_load_stackoverflow) | 1972-04-28 |
FR2105175B1 true FR2105175B1 (enrdf_load_stackoverflow) | 1976-05-28 |
Family
ID=4389292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7126003A Expired FR2105175B1 (enrdf_load_stackoverflow) | 1970-09-02 | 1971-07-06 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS55913B1 (enrdf_load_stackoverflow) |
CH (1) | CH506188A (enrdf_load_stackoverflow) |
DE (1) | DE2134528B2 (enrdf_load_stackoverflow) |
FR (1) | FR2105175B1 (enrdf_load_stackoverflow) |
GB (1) | GB1332060A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CH539360A (de) * | 1971-09-30 | 1973-07-15 | Ibm | Halbleiterschalt- oder Speichervorrichtung |
CN114582835B (zh) * | 2022-05-05 | 2022-07-29 | 长鑫存储技术有限公司 | 反熔丝结构及其制作方法、反熔丝阵列、存储装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE14941C (de) * | M. MERKELBACH in Grenzhausen bei Coblenz | Thongefäfse mit durchsichtiger Wandung | ||
NL235479A (enrdf_load_stackoverflow) * | 1958-02-04 | 1900-01-01 | ||
NL300609A (enrdf_load_stackoverflow) * | 1958-06-14 | 1967-06-26 | ||
US3150299A (en) * | 1959-09-11 | 1964-09-22 | Fairchild Camera Instr Co | Semiconductor circuit complex having isolation means |
US3344322A (en) * | 1965-01-22 | 1967-09-26 | Hughes Aircraft Co | Metal-oxide-semiconductor field effect transistor |
GB1172230A (en) * | 1965-12-16 | 1969-11-26 | Matsushita Electronics Corp | A Method of Manufacturing Semiconductor Device |
CH461646A (de) * | 1967-04-18 | 1968-08-31 | Ibm | Feld-Effekt-Transistor und Verfahren zu seiner Herstellung |
CH476398A (de) * | 1968-03-01 | 1969-07-31 | Ibm | Verfahren zur Herstellung feiner geätzter Muster |
CH484517A (de) * | 1968-06-28 | 1970-01-15 | Ibm | Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters |
-
1970
- 1970-09-02 CH CH1309970A patent/CH506188A/de not_active IP Right Cessation
-
1971
- 1971-07-06 FR FR7126003A patent/FR2105175B1/fr not_active Expired
- 1971-07-10 DE DE2134528A patent/DE2134528B2/de not_active Ceased
- 1971-08-06 JP JP5910871A patent/JPS55913B1/ja active Pending
- 1971-08-25 GB GB3985871A patent/GB1332060A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2134528B2 (de) | 1979-04-19 |
DE2134528A1 (enrdf_load_stackoverflow) | 1972-04-13 |
CH506188A (de) | 1971-04-15 |
JPS55913B1 (enrdf_load_stackoverflow) | 1980-01-10 |
GB1332060A (en) | 1973-10-03 |
FR2105175A1 (enrdf_load_stackoverflow) | 1972-04-28 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |