DE2134528B2 - Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung - Google Patents

Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung

Info

Publication number
DE2134528B2
DE2134528B2 DE2134528A DE2134528A DE2134528B2 DE 2134528 B2 DE2134528 B2 DE 2134528B2 DE 2134528 A DE2134528 A DE 2134528A DE 2134528 A DE2134528 A DE 2134528A DE 2134528 B2 DE2134528 B2 DE 2134528B2
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
gate
electrode
semiconductor material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE2134528A
Other languages
German (de)
English (en)
Other versions
DE2134528A1 (enrdf_load_stackoverflow
Inventor
Peter Dr. Zuerich Wolf (Schweiz)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE2134528A1 publication Critical patent/DE2134528A1/de
Publication of DE2134528B2 publication Critical patent/DE2134528B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
DE2134528A 1970-09-02 1971-07-10 Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung Ceased DE2134528B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1309970A CH506188A (de) 1970-09-02 1970-09-02 Feldeffekt-Transistor

Publications (2)

Publication Number Publication Date
DE2134528A1 DE2134528A1 (enrdf_load_stackoverflow) 1972-04-13
DE2134528B2 true DE2134528B2 (de) 1979-04-19

Family

ID=4389292

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2134528A Ceased DE2134528B2 (de) 1970-09-02 1971-07-10 Feldeffekt-Transistor, Verfahren zu dessen Herstellung und Verwendung des Feldeffekt-Transistors in einer integrierten Schaltung

Country Status (5)

Country Link
JP (1) JPS55913B1 (enrdf_load_stackoverflow)
CH (1) CH506188A (enrdf_load_stackoverflow)
DE (1) DE2134528B2 (enrdf_load_stackoverflow)
FR (1) FR2105175B1 (enrdf_load_stackoverflow)
GB (1) GB1332060A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH539360A (de) * 1971-09-30 1973-07-15 Ibm Halbleiterschalt- oder Speichervorrichtung
CN114582835B (zh) * 2022-05-05 2022-07-29 长鑫存储技术有限公司 反熔丝结构及其制作方法、反熔丝阵列、存储装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE14941C (de) * M. MERKELBACH in Grenzhausen bei Coblenz Thongefäfse mit durchsichtiger Wandung
DE1067936B (enrdf_load_stackoverflow) * 1958-02-04 1959-10-29
NL300609A (enrdf_load_stackoverflow) * 1958-06-14 1967-06-26
US3150299A (en) * 1959-09-11 1964-09-22 Fairchild Camera Instr Co Semiconductor circuit complex having isolation means
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
GB1172230A (en) * 1965-12-16 1969-11-26 Matsushita Electronics Corp A Method of Manufacturing Semiconductor Device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH461646A (de) * 1967-04-18 1968-08-31 Ibm Feld-Effekt-Transistor und Verfahren zu seiner Herstellung
CH476398A (de) * 1968-03-01 1969-07-31 Ibm Verfahren zur Herstellung feiner geätzter Muster
CH484517A (de) * 1968-06-28 1970-01-15 Ibm Verfahren zum Aufbringen eines Stoffes auf einen begrenzten Oberflächenbereich eines Halbleiters

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Proc. IEEE, Nov. 1963, S. 1642-1652 *

Also Published As

Publication number Publication date
DE2134528A1 (enrdf_load_stackoverflow) 1972-04-13
JPS55913B1 (enrdf_load_stackoverflow) 1980-01-10
FR2105175B1 (enrdf_load_stackoverflow) 1976-05-28
GB1332060A (en) 1973-10-03
CH506188A (de) 1971-04-15
FR2105175A1 (enrdf_load_stackoverflow) 1972-04-28

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Legal Events

Date Code Title Description
8235 Patent refused