FR1266703A - Circuits semi-conducteurs monoblocs - Google Patents
Circuits semi-conducteurs monoblocsInfo
- Publication number
- FR1266703A FR1266703A FR832289A FR832289A FR1266703A FR 1266703 A FR1266703 A FR 1266703A FR 832289 A FR832289 A FR 832289A FR 832289 A FR832289 A FR 832289A FR 1266703 A FR1266703 A FR 1266703A
- Authority
- FR
- France
- Prior art keywords
- semiconductor circuits
- monoblock
- monoblock semiconductor
- circuits
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/035—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/049—Equivalence and options
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/917—Deep level dopants, e.g. gold, chromium, iron or nickel
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US839446A US3150299A (en) | 1959-09-11 | 1959-09-11 | Semiconductor circuit complex having isolation means |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1266703A true FR1266703A (fr) | 1961-07-17 |
Family
ID=25279751
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR832289A Expired FR1266703A (fr) | 1959-09-11 | 1960-07-07 | Circuits semi-conducteurs monoblocs |
Country Status (4)
Country | Link |
---|---|
US (1) | US3150299A (fr) |
DE (2) | DE1489893B1 (fr) |
FR (1) | FR1266703A (fr) |
GB (1) | GB959667A (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1286221B (de) * | 1965-07-17 | 1969-01-02 | Telefunken Patent | Verfahren zum Herstellen einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung |
DE1639549B1 (de) * | 1964-06-23 | 1970-01-29 | Ncr Co | Integrierte Halbleiterschaltung |
FR2067024A1 (fr) * | 1969-11-07 | 1971-08-13 | Ibm | |
FR2105175A1 (fr) * | 1970-09-02 | 1972-04-28 | Ibm |
Families Citing this family (48)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1514818A1 (de) * | 1951-01-28 | 1969-05-08 | Telefunken Patent | Festkoerperschaltung,bestehend aus einem Halbleiterkoerper mit eingebrachten aktiven Bauelementen und einer Isolierschicht mit aufgebrachten passiven Bauelementen und Leitungsbahnen |
US3288656A (en) * | 1961-07-26 | 1966-11-29 | Nippon Electric Co | Semiconductor device |
US3256465A (en) * | 1962-06-08 | 1966-06-14 | Signetics Corp | Semiconductor device assembly with true metallurgical bonds |
US3249828A (en) * | 1962-06-15 | 1966-05-03 | Crystalonics Inc | Overlapping gate structure field effect semiconductor device |
GB1001908A (en) * | 1962-08-31 | 1965-08-18 | Texas Instruments Inc | Semiconductor devices |
US3316128A (en) * | 1962-10-15 | 1967-04-25 | Nippon Electric Co | Semiconductor device |
FR1358573A (fr) * | 1963-03-06 | 1964-04-17 | Csf | Circuit électrique intégré |
US3319311A (en) * | 1963-05-24 | 1967-05-16 | Ibm | Semiconductor devices and their fabrication |
NL294168A (fr) * | 1963-06-17 | |||
BE650116A (fr) * | 1963-07-05 | 1900-01-01 | ||
US3312882A (en) * | 1964-06-25 | 1967-04-04 | Westinghouse Electric Corp | Transistor structure and method of making, suitable for integration and exhibiting good power handling capability and frequency response |
US3312879A (en) * | 1964-07-29 | 1967-04-04 | North American Aviation Inc | Semiconductor structure including opposite conductivity segments |
US3423647A (en) * | 1964-07-30 | 1969-01-21 | Nippon Electric Co | Semiconductor device having regions with preselected different minority carrier lifetimes |
US3325707A (en) * | 1965-04-26 | 1967-06-13 | Rca Corp | Transistor with low collector capacitance and method of making same |
US3390022A (en) * | 1965-06-30 | 1968-06-25 | North American Rockwell | Semiconductor device and process for producing same |
US3442011A (en) * | 1965-06-30 | 1969-05-06 | Texas Instruments Inc | Method for isolating individual devices in an integrated circuit monolithic bar |
US3433686A (en) * | 1966-01-06 | 1969-03-18 | Ibm | Process of bonding chips in a substrate recess by epitaxial growth of the bonding material |
US3475665A (en) * | 1966-08-03 | 1969-10-28 | Trw Inc | Electrode lead for semiconductor active devices |
GB699545A (en) * | 1966-09-08 | 1953-11-11 | Harold Stuart Hallewell | Improvements in forming means for profile grinding wheels |
NL6706735A (fr) * | 1967-05-13 | 1968-11-14 | ||
US3538399A (en) * | 1968-05-15 | 1970-11-03 | Tektronix Inc | Pn junction gated field effect transistor having buried layer of low resistivity |
US3577037A (en) * | 1968-07-05 | 1971-05-04 | Ibm | Diffused electrical connector apparatus and method of making same |
US3617399A (en) * | 1968-10-31 | 1971-11-02 | Texas Instruments Inc | Method of fabricating semiconductor power devices within high resistivity isolation rings |
US3667117A (en) * | 1969-02-28 | 1972-06-06 | Corning Glass Works | Electroluminescent diode configuration and method of forming the same |
US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
JPS5127985B2 (fr) * | 1971-10-01 | 1976-08-16 | ||
US4374394A (en) * | 1980-10-01 | 1983-02-15 | Rca Corporation | Monolithic integrated circuit |
US4472873A (en) | 1981-10-22 | 1984-09-25 | Fairchild Camera And Instrument Corporation | Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure |
US8481425B2 (en) | 2011-05-16 | 2013-07-09 | United Microelectronics Corp. | Method for fabricating through-silicon via structure |
US8518823B2 (en) | 2011-12-23 | 2013-08-27 | United Microelectronics Corp. | Through silicon via and method of forming the same |
US8609529B2 (en) | 2012-02-01 | 2013-12-17 | United Microelectronics Corp. | Fabrication method and structure of through silicon via |
US8691600B2 (en) | 2012-05-02 | 2014-04-08 | United Microelectronics Corp. | Method for testing through-silicon-via (TSV) structures |
US8691688B2 (en) | 2012-06-18 | 2014-04-08 | United Microelectronics Corp. | Method of manufacturing semiconductor structure |
US9275933B2 (en) | 2012-06-19 | 2016-03-01 | United Microelectronics Corp. | Semiconductor device |
US8900996B2 (en) | 2012-06-21 | 2014-12-02 | United Microelectronics Corp. | Through silicon via structure and method of fabricating the same |
US8525296B1 (en) | 2012-06-26 | 2013-09-03 | United Microelectronics Corp. | Capacitor structure and method of forming the same |
US8912844B2 (en) | 2012-10-09 | 2014-12-16 | United Microelectronics Corp. | Semiconductor structure and method for reducing noise therein |
US9035457B2 (en) | 2012-11-29 | 2015-05-19 | United Microelectronics Corp. | Substrate with integrated passive devices and method of manufacturing the same |
US8716104B1 (en) | 2012-12-20 | 2014-05-06 | United Microelectronics Corp. | Method of fabricating isolation structure |
US8884398B2 (en) | 2013-04-01 | 2014-11-11 | United Microelectronics Corp. | Anti-fuse structure and programming method thereof |
US9287173B2 (en) | 2013-05-23 | 2016-03-15 | United Microelectronics Corp. | Through silicon via and process thereof |
US9123730B2 (en) | 2013-07-11 | 2015-09-01 | United Microelectronics Corp. | Semiconductor device having through silicon trench shielding structure surrounding RF circuit |
US9024416B2 (en) | 2013-08-12 | 2015-05-05 | United Microelectronics Corp. | Semiconductor structure |
US8916471B1 (en) | 2013-08-26 | 2014-12-23 | United Microelectronics Corp. | Method for forming semiconductor structure having through silicon via for signal and shielding structure |
US9048223B2 (en) | 2013-09-03 | 2015-06-02 | United Microelectronics Corp. | Package structure having silicon through vias connected to ground potential |
US9117804B2 (en) | 2013-09-13 | 2015-08-25 | United Microelectronics Corporation | Interposer structure and manufacturing method thereof |
US9343359B2 (en) | 2013-12-25 | 2016-05-17 | United Microelectronics Corp. | Integrated structure and method for fabricating the same |
US10340203B2 (en) | 2014-02-07 | 2019-07-02 | United Microelectronics Corp. | Semiconductor structure with through silicon via and method for fabricating and testing the same |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB707008A (en) * | 1948-10-01 | 1954-04-07 | Licentia Gmbh | Electric un-symmetrically conductive systems, particularly dry-plate rectifiers |
DE833366C (de) * | 1949-04-14 | 1952-06-30 | Siemens & Halske A G | Halbleiterverstaerker |
US2588254A (en) * | 1950-05-09 | 1952-03-04 | Purdue Research Foundation | Photoelectric and thermoelectric device utilizing semiconducting material |
US2708646A (en) * | 1951-05-09 | 1955-05-17 | Hughes Aircraft Co | Methods of making germanium alloy semiconductors |
BE517808A (fr) * | 1952-03-14 | |||
US2829422A (en) * | 1952-05-21 | 1958-04-08 | Bell Telephone Labor Inc | Methods of fabricating semiconductor signal translating devices |
US2764642A (en) * | 1952-10-31 | 1956-09-25 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
NL83838C (fr) * | 1952-12-01 | 1957-01-15 | ||
US2772360A (en) * | 1954-02-11 | 1956-11-27 | Bell Telephone Labor Inc | Negative resistance device |
US2885608A (en) * | 1954-12-03 | 1959-05-05 | Philco Corp | Semiconductive device and method of manufacture |
US2950219A (en) * | 1955-02-23 | 1960-08-23 | Rauland Corp | Method of manufacturing semiconductor crystals |
US2919386A (en) * | 1955-11-10 | 1959-12-29 | Hoffman Electronics Corp | Rectifier and method of making same |
US2869084A (en) * | 1956-07-20 | 1959-01-13 | Bell Telephone Labor Inc | Negative resistance semiconductive device |
US2842831A (en) * | 1956-08-30 | 1958-07-15 | Bell Telephone Labor Inc | Manufacture of semiconductor devices |
US2979427A (en) * | 1957-03-18 | 1961-04-11 | Shockley William | Semiconductor device and method of making the same |
US3029366A (en) * | 1959-04-22 | 1962-04-10 | Sprague Electric Co | Multiple semiconductor assembly |
-
1959
- 1959-09-11 US US839446A patent/US3150299A/en not_active Expired - Lifetime
-
1960
- 1960-06-08 GB GB20055/60A patent/GB959667A/en not_active Expired
- 1960-07-07 FR FR832289A patent/FR1266703A/fr not_active Expired
- 1960-08-22 DE DE19601489893 patent/DE1489893B1/de active Pending
- 1960-08-22 DE DEF31938A patent/DE1284517B/de active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1639549B1 (de) * | 1964-06-23 | 1970-01-29 | Ncr Co | Integrierte Halbleiterschaltung |
DE1286221B (de) * | 1965-07-17 | 1969-01-02 | Telefunken Patent | Verfahren zum Herstellen einer Halbleiteranordnung und nach diesem Verfahren hergestellte Halbleiteranordnung |
FR2067024A1 (fr) * | 1969-11-07 | 1971-08-13 | Ibm | |
FR2105175A1 (fr) * | 1970-09-02 | 1972-04-28 | Ibm |
Also Published As
Publication number | Publication date |
---|---|
DE1284517B (de) | 1968-12-05 |
DE1489893B1 (de) | 1971-09-16 |
US3150299A (en) | 1964-09-22 |
GB959667A (en) | 1964-06-03 |
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