DE2126662C3 - Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung - Google Patents
Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-VerbindungInfo
- Publication number
- DE2126662C3 DE2126662C3 DE2126662A DE2126662A DE2126662C3 DE 2126662 C3 DE2126662 C3 DE 2126662C3 DE 2126662 A DE2126662 A DE 2126662A DE 2126662 A DE2126662 A DE 2126662A DE 2126662 C3 DE2126662 C3 DE 2126662C3
- Authority
- DE
- Germany
- Prior art keywords
- melt
- crucible
- semiconductor
- compact
- pulling
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 20
- 150000001875 compounds Chemical class 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 25
- 239000000155 melt Substances 0.000 claims description 22
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052810 boron oxide Inorganic materials 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 16
- 230000008018 melting Effects 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000007787 solid Substances 0.000 claims description 5
- 239000007858 starting material Substances 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 14
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 229910005540 GaP Inorganic materials 0.000 description 8
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 8
- 239000010410 layer Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 238000010309 melting process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 230000005693 optoelectronics Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910011255 B2O3 Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- LVQULNGDVIKLPK-UHFFFAOYSA-N aluminium antimonide Chemical compound [Sb]#[Al] LVQULNGDVIKLPK-UHFFFAOYSA-N 0.000 description 1
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- VTGARNNDLOTBET-UHFFFAOYSA-N gallium antimonide Chemical compound [Sb]#[Ga] VTGARNNDLOTBET-UHFFFAOYSA-N 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000035784 germination Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- MOWNZPNSYMGTMD-UHFFFAOYSA-N oxidoboron Chemical class O=[B] MOWNZPNSYMGTMD-UHFFFAOYSA-N 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 108090000623 proteins and genes Proteins 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B27/00—Single-crystal growth under a protective fluid
- C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (10)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2126662A DE2126662C3 (de) | 1971-05-28 | 1971-05-28 | Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung |
| CH622072A CH576281A5 (cg-RX-API-DMAC10.html) | 1971-05-28 | 1972-04-26 | |
| AT417072A AT337780B (de) | 1971-05-28 | 1972-05-12 | Verfahren zur herstellung von versetzungsfreien aiiibv-einkristallstaben und vorrichtung zur durchfuhrung dieses verfahrens |
| IT2475172A IT960642B (it) | 1971-05-28 | 1972-05-24 | Procedimento per la produzione di monocristalli a iii bv senza dislocazioni |
| NL7207055A NL7207055A (cg-RX-API-DMAC10.html) | 1971-05-28 | 1972-05-25 | |
| FR7218737A FR2139939B1 (cg-RX-API-DMAC10.html) | 1971-05-28 | 1972-05-25 | |
| GB2509772A GB1388286A (en) | 1971-05-28 | 1972-05-26 | Monocrystalline materials |
| LU65428D LU65428A1 (cg-RX-API-DMAC10.html) | 1971-05-28 | 1972-05-26 | |
| BE784033A BE784033A (fr) | 1971-05-28 | 1972-05-26 | Procede de fabrication de monocristaux du type aiiibv exempts de dislocations |
| CA143,130A CA968672A (en) | 1971-05-28 | 1972-05-26 | Apparatus and method for producing dislocation-free aiiibv single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2126662A DE2126662C3 (de) | 1971-05-28 | 1971-05-28 | Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2126662A1 DE2126662A1 (de) | 1972-12-07 |
| DE2126662B2 DE2126662B2 (de) | 1977-06-23 |
| DE2126662C3 true DE2126662C3 (de) | 1978-11-09 |
Family
ID=5809247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2126662A Expired DE2126662C3 (de) | 1971-05-28 | 1971-05-28 | Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung |
Country Status (10)
| Country | Link |
|---|---|
| AT (1) | AT337780B (cg-RX-API-DMAC10.html) |
| BE (1) | BE784033A (cg-RX-API-DMAC10.html) |
| CA (1) | CA968672A (cg-RX-API-DMAC10.html) |
| CH (1) | CH576281A5 (cg-RX-API-DMAC10.html) |
| DE (1) | DE2126662C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2139939B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1388286A (cg-RX-API-DMAC10.html) |
| IT (1) | IT960642B (cg-RX-API-DMAC10.html) |
| LU (1) | LU65428A1 (cg-RX-API-DMAC10.html) |
| NL (1) | NL7207055A (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2420899A1 (de) * | 1974-04-30 | 1975-12-11 | Wacker Chemitronic | Verfahren zur herstellung von einkristallinem galliumarsenid |
| JPS5913693A (ja) * | 1982-07-15 | 1984-01-24 | Toshiba Corp | 化合物半導体単結晶育成装置 |
| DE3640868A1 (de) * | 1986-11-29 | 1988-06-09 | Leybold Ag | Einrichtung zur bestimmung des durchmessers eines kristalls beim ziehen aus einer schmelze |
| DE10025863A1 (de) * | 2000-05-25 | 2001-12-06 | Wacker Chemie Gmbh | Chargiergut und Halterungssystem für das Chargiergut |
| CN103757691B (zh) * | 2014-01-10 | 2016-04-20 | 英利集团有限公司 | 多晶硅料复投方法 |
| CN114481051A (zh) * | 2022-01-11 | 2022-05-13 | 先导薄膜材料（广东）有限公司 | 一种锗靶材及其制备装置、制备方法 |
-
1971
- 1971-05-28 DE DE2126662A patent/DE2126662C3/de not_active Expired
-
1972
- 1972-04-26 CH CH622072A patent/CH576281A5/xx not_active IP Right Cessation
- 1972-05-12 AT AT417072A patent/AT337780B/de active
- 1972-05-24 IT IT2475172A patent/IT960642B/it active
- 1972-05-25 NL NL7207055A patent/NL7207055A/xx unknown
- 1972-05-25 FR FR7218737A patent/FR2139939B1/fr not_active Expired
- 1972-05-26 LU LU65428D patent/LU65428A1/xx unknown
- 1972-05-26 BE BE784033A patent/BE784033A/xx unknown
- 1972-05-26 CA CA143,130A patent/CA968672A/en not_active Expired
- 1972-05-26 GB GB2509772A patent/GB1388286A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2139939A1 (cg-RX-API-DMAC10.html) | 1973-01-12 |
| DE2126662B2 (de) | 1977-06-23 |
| DE2126662A1 (de) | 1972-12-07 |
| GB1388286A (en) | 1975-03-26 |
| ATA417072A (de) | 1976-11-15 |
| CA968672A (en) | 1975-06-03 |
| AT337780B (de) | 1977-07-25 |
| NL7207055A (cg-RX-API-DMAC10.html) | 1972-11-30 |
| LU65428A1 (cg-RX-API-DMAC10.html) | 1972-08-24 |
| BE784033A (fr) | 1972-11-27 |
| FR2139939B1 (cg-RX-API-DMAC10.html) | 1976-03-12 |
| IT960642B (it) | 1973-11-30 |
| CH576281A5 (cg-RX-API-DMAC10.html) | 1976-06-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) |