CA968672A - Apparatus and method for producing dislocation-free aiiibv single crystals - Google Patents

Apparatus and method for producing dislocation-free aiiibv single crystals

Info

Publication number
CA968672A
CA968672A CA143,130A CA143130A CA968672A CA 968672 A CA968672 A CA 968672A CA 143130 A CA143130 A CA 143130A CA 968672 A CA968672 A CA 968672A
Authority
CA
Canada
Prior art keywords
aiiibv
free
single crystals
producing dislocation
dislocation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA143,130A
Other versions
CA143130S (en
Inventor
Klaus Schwarzmichel
Siegfried Leibenzeder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Application granted granted Critical
Publication of CA968672A publication Critical patent/CA968672A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CA143,130A 1971-05-28 1972-05-26 Apparatus and method for producing dislocation-free aiiibv single crystals Expired CA968672A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2126662A DE2126662C3 (en) 1971-05-28 1971-05-28 Process for the production of a single crystal rod from a semiconducting A (HI) B (V) compound

Publications (1)

Publication Number Publication Date
CA968672A true CA968672A (en) 1975-06-03

Family

ID=5809247

Family Applications (1)

Application Number Title Priority Date Filing Date
CA143,130A Expired CA968672A (en) 1971-05-28 1972-05-26 Apparatus and method for producing dislocation-free aiiibv single crystals

Country Status (10)

Country Link
AT (1) AT337780B (en)
BE (1) BE784033A (en)
CA (1) CA968672A (en)
CH (1) CH576281A5 (en)
DE (1) DE2126662C3 (en)
FR (1) FR2139939B1 (en)
GB (1) GB1388286A (en)
IT (1) IT960642B (en)
LU (1) LU65428A1 (en)
NL (1) NL7207055A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
JPS5913693A (en) * 1982-07-15 1984-01-24 Toshiba Corp Growth device for compound semiconductor single crystal
DE3640868A1 (en) * 1986-11-29 1988-06-09 Leybold Ag Apparatus for determining the diameter of a crystal on pulling from a melt
DE10025863A1 (en) 2000-05-25 2001-12-06 Wacker Chemie Gmbh Loaded goods and mounting system for the stored goods
CN103757691B (en) * 2014-01-10 2016-04-20 英利集团有限公司 Polycrystalline silicon material throws method again
CN114481051A (en) * 2022-01-11 2022-05-13 先导薄膜材料（广东）有限公司 Germanium target material and preparation device and preparation method thereof

Also Published As

Publication number Publication date
IT960642B (en) 1973-11-30
FR2139939A1 (en) 1973-01-12
ATA417072A (en) 1976-11-15
NL7207055A (en) 1972-11-30
FR2139939B1 (en) 1976-03-12
BE784033A (en) 1972-11-27
CH576281A5 (en) 1976-06-15
DE2126662A1 (en) 1972-12-07
GB1388286A (en) 1975-03-26
DE2126662B2 (en) 1977-06-23
DE2126662C3 (en) 1978-11-09
LU65428A1 (en) 1972-08-24
AT337780B (en) 1977-07-25

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