ATA417072A - PROCESS FOR MANUFACTURING DISPLACEMENT-FREE AIIIBV SINGLE CRYSTAL RODS AND DEVICE FOR CARRYING OUT THIS PROCESS - Google Patents

PROCESS FOR MANUFACTURING DISPLACEMENT-FREE AIIIBV SINGLE CRYSTAL RODS AND DEVICE FOR CARRYING OUT THIS PROCESS

Info

Publication number
ATA417072A
ATA417072A AT417072A AT417072A ATA417072A AT A417072 A ATA417072 A AT A417072A AT 417072 A AT417072 A AT 417072A AT 417072 A AT417072 A AT 417072A AT A417072 A ATA417072 A AT A417072A
Authority
AT
Austria
Prior art keywords
aiiibv
free
carrying
single crystal
crystal rods
Prior art date
Application number
AT417072A
Other languages
German (de)
Other versions
AT337780B (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA417072A publication Critical patent/ATA417072A/en
Application granted granted Critical
Publication of AT337780B publication Critical patent/AT337780B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT417072A 1971-05-28 1972-05-12 PROCESS FOR MANUFACTURING DISPLACEMENT-FREE AIIIBV SINGLE CRYSTAL RODS AND DEVICE FOR CARRYING OUT THIS PROCESS AT337780B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2126662A DE2126662C3 (en) 1971-05-28 1971-05-28 Process for the production of a single crystal rod from a semiconducting A (HI) B (V) compound

Publications (2)

Publication Number Publication Date
ATA417072A true ATA417072A (en) 1976-11-15
AT337780B AT337780B (en) 1977-07-25

Family

ID=5809247

Family Applications (1)

Application Number Title Priority Date Filing Date
AT417072A AT337780B (en) 1971-05-28 1972-05-12 PROCESS FOR MANUFACTURING DISPLACEMENT-FREE AIIIBV SINGLE CRYSTAL RODS AND DEVICE FOR CARRYING OUT THIS PROCESS

Country Status (10)

Country Link
AT (1) AT337780B (en)
BE (1) BE784033A (en)
CA (1) CA968672A (en)
CH (1) CH576281A5 (en)
DE (1) DE2126662C3 (en)
FR (1) FR2139939B1 (en)
GB (1) GB1388286A (en)
IT (1) IT960642B (en)
LU (1) LU65428A1 (en)
NL (1) NL7207055A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (en) * 1974-04-30 1975-12-11 Wacker Chemitronic METHOD FOR PRODUCING SINGLE CRYSTALLINE GALLIUM ARSENIDE
JPS5913693A (en) * 1982-07-15 1984-01-24 Toshiba Corp Growth device for compound semiconductor single crystal
DE3640868A1 (en) * 1986-11-29 1988-06-09 Leybold Ag Apparatus for determining the diameter of a crystal on pulling from a melt
DE10025863A1 (en) 2000-05-25 2001-12-06 Wacker Chemie Gmbh Loaded goods and mounting system for the stored goods
CN103757691B (en) * 2014-01-10 2016-04-20 英利集团有限公司 Polycrystalline silicon material throws method again
CN114481051A (en) * 2022-01-11 2022-05-13 先导薄膜材料（广东）有限公司 Germanium target material and preparation device and preparation method thereof

Also Published As

Publication number Publication date
CH576281A5 (en) 1976-06-15
NL7207055A (en) 1972-11-30
IT960642B (en) 1973-11-30
FR2139939A1 (en) 1973-01-12
BE784033A (en) 1972-11-27
CA968672A (en) 1975-06-03
FR2139939B1 (en) 1976-03-12
LU65428A1 (en) 1972-08-24
DE2126662A1 (en) 1972-12-07
DE2126662C3 (en) 1978-11-09
DE2126662B2 (en) 1977-06-23
AT337780B (en) 1977-07-25
GB1388286A (en) 1975-03-26

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