BE784033A - Procede de fabrication de monocristaux du type aiiibv exempts de dislocations - Google Patents

Procede de fabrication de monocristaux du type aiiibv exempts de dislocations

Info

Publication number
BE784033A
BE784033A BE784033A BE784033A BE784033A BE 784033 A BE784033 A BE 784033A BE 784033 A BE784033 A BE 784033A BE 784033 A BE784033 A BE 784033A BE 784033 A BE784033 A BE 784033A
Authority
BE
Belgium
Prior art keywords
aiiibv
dislocations
manufacturing process
single crystals
type free
Prior art date
Application number
BE784033A
Other languages
English (en)
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE784033A publication Critical patent/BE784033A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
BE784033A 1971-05-28 1972-05-26 Procede de fabrication de monocristaux du type aiiibv exempts de dislocations BE784033A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2126662A DE2126662C3 (de) 1971-05-28 1971-05-28 Verfahren zur Herstellung eines Einkristallstabes aus einer halbleitenden A(HI)B(V)-Verbindung

Publications (1)

Publication Number Publication Date
BE784033A true BE784033A (fr) 1972-11-27

Family

ID=5809247

Family Applications (1)

Application Number Title Priority Date Filing Date
BE784033A BE784033A (fr) 1971-05-28 1972-05-26 Procede de fabrication de monocristaux du type aiiibv exempts de dislocations

Country Status (10)

Country Link
AT (1) AT337780B (cg-RX-API-DMAC10.html)
BE (1) BE784033A (cg-RX-API-DMAC10.html)
CA (1) CA968672A (cg-RX-API-DMAC10.html)
CH (1) CH576281A5 (cg-RX-API-DMAC10.html)
DE (1) DE2126662C3 (cg-RX-API-DMAC10.html)
FR (1) FR2139939B1 (cg-RX-API-DMAC10.html)
GB (1) GB1388286A (cg-RX-API-DMAC10.html)
IT (1) IT960642B (cg-RX-API-DMAC10.html)
LU (1) LU65428A1 (cg-RX-API-DMAC10.html)
NL (1) NL7207055A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420899A1 (de) * 1974-04-30 1975-12-11 Wacker Chemitronic Verfahren zur herstellung von einkristallinem galliumarsenid
JPS5913693A (ja) * 1982-07-15 1984-01-24 Toshiba Corp 化合物半導体単結晶育成装置
DE3640868A1 (de) * 1986-11-29 1988-06-09 Leybold Ag Einrichtung zur bestimmung des durchmessers eines kristalls beim ziehen aus einer schmelze
DE10025863A1 (de) * 2000-05-25 2001-12-06 Wacker Chemie Gmbh Chargiergut und Halterungssystem für das Chargiergut
CN103757691B (zh) * 2014-01-10 2016-04-20 英利集团有限公司 多晶硅料复投方法
CN114481051A (zh) * 2022-01-11 2022-05-13 先导薄膜材料（广东）有限公司 一种锗靶材及其制备装置、制备方法

Also Published As

Publication number Publication date
FR2139939A1 (cg-RX-API-DMAC10.html) 1973-01-12
DE2126662B2 (de) 1977-06-23
DE2126662A1 (de) 1972-12-07
GB1388286A (en) 1975-03-26
ATA417072A (de) 1976-11-15
CA968672A (en) 1975-06-03
AT337780B (de) 1977-07-25
NL7207055A (cg-RX-API-DMAC10.html) 1972-11-30
LU65428A1 (cg-RX-API-DMAC10.html) 1972-08-24
DE2126662C3 (de) 1978-11-09
FR2139939B1 (cg-RX-API-DMAC10.html) 1976-03-12
IT960642B (it) 1973-11-30
CH576281A5 (cg-RX-API-DMAC10.html) 1976-06-15

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