DE69901269T2 - Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles - Google Patents

Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles

Info

Publication number
DE69901269T2
DE69901269T2 DE69901269T DE69901269T DE69901269T2 DE 69901269 T2 DE69901269 T2 DE 69901269T2 DE 69901269 T DE69901269 T DE 69901269T DE 69901269 T DE69901269 T DE 69901269T DE 69901269 T2 DE69901269 T2 DE 69901269T2
Authority
DE
Germany
Prior art keywords
producing
single crystal
sic single
sic
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69901269T
Other languages
English (en)
Other versions
DE69901269D1 (de
Inventor
Hiromu Shiomi
Shigehiro Nishino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NISHINO SHIGEHIRO KYOTO
Sumitomo Electric Industries Ltd
Original Assignee
NISHINO SHIGEHIRO KYOTO
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP00753798A external-priority patent/JP4053125B2/ja
Application filed by NISHINO SHIGEHIRO KYOTO, Sumitomo Electric Industries Ltd filed Critical NISHINO SHIGEHIRO KYOTO
Publication of DE69901269D1 publication Critical patent/DE69901269D1/de
Application granted granted Critical
Publication of DE69901269T2 publication Critical patent/DE69901269T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
DE69901269T 1998-01-19 1999-01-11 Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles Expired - Lifetime DE69901269T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP00753798A JP4053125B2 (ja) 1998-01-19 1998-01-19 ＳｉＣ単結晶の合成方法
JP1264698 1998-01-26

Publications (2)

Publication Number Publication Date
DE69901269D1 DE69901269D1 (de) 2002-05-23
DE69901269T2 true DE69901269T2 (de) 2002-08-14

Family

ID=26341857

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69901269T Expired - Lifetime DE69901269T2 (de) 1998-01-19 1999-01-11 Verfahren und Vorrichtung zur Herstellung eines SiC-Einkristalles

Country Status (1)

Country Link
DE (1) DE69901269T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009016132A1 (de) * 2009-04-03 2010-10-07 Sicrystal Ag Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AIN und langer Volumeneinkristall aus SiC oder AIN

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110331439A (zh) * 2019-07-22 2019-10-15 杭州弘晟智能科技有限公司 一种用于碳化硅外延的加热装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009016132A1 (de) * 2009-04-03 2010-10-07 Sicrystal Ag Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AIN und langer Volumeneinkristall aus SiC oder AIN
DE102009016132B4 (de) * 2009-04-03 2012-12-27 Sicrystal Ag Verfahren zur Herstellung eines langen Volumeneinkristalls aus SiC oder AlN und langer Volumeneinkristall aus SiC oder AlN

Also Published As

Publication number Publication date
DE69901269D1 (de) 2002-05-23

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