DE2114363A1 - Spannungsvariabler Kondensator mit erweiterbarem pn-Übergangsbereich - Google Patents
Spannungsvariabler Kondensator mit erweiterbarem pn-ÜbergangsbereichInfo
- Publication number
- DE2114363A1 DE2114363A1 DE19712114363 DE2114363A DE2114363A1 DE 2114363 A1 DE2114363 A1 DE 2114363A1 DE 19712114363 DE19712114363 DE 19712114363 DE 2114363 A DE2114363 A DE 2114363A DE 2114363 A1 DE2114363 A1 DE 2114363A1
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- semiconductor body
- conductivity type
- capacitor according
- variable capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003990 capacitor Substances 0.000 title claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 79
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 25
- 229910052750 molybdenum Inorganic materials 0.000 claims description 25
- 239000011733 molybdenum Substances 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- 235000012239 silicon dioxide Nutrition 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 230000008859 change Effects 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims description 6
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000012212 insulator Substances 0.000 description 58
- 239000010410 layer Substances 0.000 description 49
- 239000010408 film Substances 0.000 description 28
- 229910052782 aluminium Inorganic materials 0.000 description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- 239000004020 conductor Substances 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000002048 anodisation reaction Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- -1 i.e. Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- IDIPWEYIBKUDNY-UHFFFAOYSA-N benzenesulfonyl fluoride Chemical compound FS(=O)(=O)C1=CC=CC=C1 IDIPWEYIBKUDNY-UHFFFAOYSA-N 0.000 description 1
- 244000309466 calf Species 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- YAGKRVSRTSUGEY-UHFFFAOYSA-N ferricyanide Chemical compound [Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] YAGKRVSRTSUGEY-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000012362 glacial acetic acid Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- PYLWMHQQBFSUBP-UHFFFAOYSA-N monofluorobenzene Chemical compound FC1=CC=CC=C1 PYLWMHQQBFSUBP-UHFFFAOYSA-N 0.000 description 1
- 238000002663 nebulization Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 235000011007 phosphoric acid Nutrition 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- YBBRCQOCSYXUOC-UHFFFAOYSA-N sulfuryl dichloride Chemical compound ClS(Cl)(=O)=O YBBRCQOCSYXUOC-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2465370A | 1970-04-01 | 1970-04-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2114363A1 true DE2114363A1 (de) | 1971-10-21 |
Family
ID=21821708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712114363 Pending DE2114363A1 (de) | 1970-04-01 | 1971-03-24 | Spannungsvariabler Kondensator mit erweiterbarem pn-Übergangsbereich |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3604990A (enExample) |
| DE (1) | DE2114363A1 (enExample) |
| FR (1) | FR2085770A1 (enExample) |
| GB (1) | GB1332045A (enExample) |
| NL (1) | NL7104259A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3767981A (en) * | 1971-06-04 | 1973-10-23 | Signetics Corp | High voltage planar diode structure and method |
| US3868187A (en) * | 1972-08-31 | 1975-02-25 | Tokyo Shibaura Electric Co | Avalanche injection type mos memory |
| US3808472A (en) * | 1972-12-29 | 1974-04-30 | Gen Electric | Variable capacitance semiconductor devices |
| DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
| DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
| JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
| US4529994A (en) * | 1981-12-17 | 1985-07-16 | Clarion Co., Ltd. | Variable capacitor with single depletion layer |
| US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
| US5192871A (en) * | 1991-10-15 | 1993-03-09 | Motorola, Inc. | Voltage variable capacitor having amorphous dielectric film |
| GB9416900D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | A variable capacitance semiconductor diode |
| JP2658913B2 (ja) * | 1994-10-28 | 1997-09-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2964648A (en) * | 1958-12-24 | 1960-12-13 | Bell Telephone Labor Inc | Semiconductor capacitor |
| NL243218A (enExample) * | 1958-12-24 | |||
| NL265382A (enExample) * | 1960-03-08 | |||
| US3045129A (en) * | 1960-12-08 | 1962-07-17 | Bell Telephone Labor Inc | Semiconductor tunnel device |
| US3303059A (en) * | 1964-06-29 | 1967-02-07 | Ibm | Methods of improving electrical characteristics of semiconductor devices and products so produced |
| US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
| US3454894A (en) * | 1965-11-24 | 1969-07-08 | Leeds & Northrup Co | Stabilization of drain-electrode current of insulated-gate field-effect transistor |
| US3439236A (en) * | 1965-12-09 | 1969-04-15 | Rca Corp | Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component |
| US3401349A (en) * | 1966-11-02 | 1968-09-10 | Rca Corp | Wide band high frequency amplifier |
-
1970
- 1970-04-01 US US24653A patent/US3604990A/en not_active Expired - Lifetime
-
1971
- 1971-03-24 DE DE19712114363 patent/DE2114363A1/de active Pending
- 1971-03-30 NL NL7104259A patent/NL7104259A/xx unknown
- 1971-04-01 FR FR7111460A patent/FR2085770A1/fr not_active Withdrawn
- 1971-04-19 GB GB2592671*A patent/GB1332045A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2085770A1 (enExample) | 1971-12-31 |
| GB1332045A (en) | 1973-10-03 |
| NL7104259A (enExample) | 1971-10-05 |
| US3604990A (en) | 1971-09-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1614283C3 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE2640525C2 (de) | Verfahren zur Herstellung einer MIS-Halbleiterschaltungsanordnung | |
| DE3500528C2 (de) | Verfahren zur Bildung eines Paares komplementärer MOS-Transistoren | |
| DE2605830C3 (de) | Verfahren zur Herstellung eines Halbleiterbauelements | |
| DE3202608C2 (enExample) | ||
| DE3688057T2 (de) | Halbleitervorrichtung und Methode zur Herstellung. | |
| EP0005185B1 (de) | Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen | |
| DE2445879C2 (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
| DE2749607C3 (de) | Halbleiteranordnung und Verfahren zu deren Herstellung | |
| DE2546314A1 (de) | Feldeffekt-transistorstruktur und verfahren zur herstellung | |
| DE1614356B2 (de) | Verfahren zur Herstellung einer integrierten Halbleiterbaugruppe mit komplementären Feldeffekttransistoren und Material zur Durchführung des Verfahrens | |
| DE4130555C2 (de) | Halbleitervorrichtung mit hoher Durchbruchsspannung und geringem Widerstand, sowie Herstellungsverfahren | |
| DE2019655C2 (de) | Verfahren zur Eindiffundierung eines den Leitungstyp verändernden Aktivators in einen Oberflächenbereich eines Halbleiterkörpers | |
| DE1806624A1 (de) | Lichtelektrischer Strahlungsempfaenger | |
| DE2617855A1 (de) | Halbleiterbauelement mit schottky- sperrschicht | |
| DE2114363A1 (de) | Spannungsvariabler Kondensator mit erweiterbarem pn-Übergangsbereich | |
| DE2718449A1 (de) | Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte anordnung | |
| DE1951243A1 (de) | MOS-Kapazitaetsdiode | |
| DE69132842T2 (de) | Nassätzverfahren mit hoher Selektivität zwischen Cu und Cu3Ge | |
| DE3427293A1 (de) | Vertikale mosfet-einrichtung | |
| DE2460682A1 (de) | Halbleitervorrichtung | |
| DE2414142A1 (de) | Spannungsveraenderliche kondensatoranordnung | |
| DE2616857A1 (de) | Verfahren zur herstellung von halbleiterbauelementen | |
| DE2752335A1 (de) | Verfahren zur herstellung eines sperrschicht-feldeffekttransistors | |
| DE3119137A1 (de) | Halbleiter und verfahren zu deren herstellung |