GB1332045A - Voltage-variable capacitors - Google Patents

Voltage-variable capacitors

Info

Publication number
GB1332045A
GB1332045A GB2592671*A GB2592671A GB1332045A GB 1332045 A GB1332045 A GB 1332045A GB 2592671 A GB2592671 A GB 2592671A GB 1332045 A GB1332045 A GB 1332045A
Authority
GB
United Kingdom
Prior art keywords
regions
layers
semi
layer
insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2592671*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of GB1332045A publication Critical patent/GB1332045A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
GB2592671*A 1970-04-01 1971-04-19 Voltage-variable capacitors Expired GB1332045A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2465370A 1970-04-01 1970-04-01

Publications (1)

Publication Number Publication Date
GB1332045A true GB1332045A (en) 1973-10-03

Family

ID=21821708

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2592671*A Expired GB1332045A (en) 1970-04-01 1971-04-19 Voltage-variable capacitors

Country Status (5)

Country Link
US (1) US3604990A (enExample)
DE (1) DE2114363A1 (enExample)
FR (1) FR2085770A1 (enExample)
GB (1) GB1332045A (enExample)
NL (1) NL7104259A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630082A (en) * 1979-03-12 1986-12-16 Clarion Co., Ltd. Semiconductor device with multi-electrode construction equivalent to variable capacitance diode

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3808472A (en) * 1972-12-29 1974-04-30 Gen Electric Variable capacitance semiconductor devices
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
US4529994A (en) * 1981-12-17 1985-07-16 Clarion Co., Ltd. Variable capacitor with single depletion layer
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
US5192871A (en) * 1991-10-15 1993-03-09 Motorola, Inc. Voltage variable capacitor having amorphous dielectric film
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
JP2658913B2 (ja) * 1994-10-28 1997-09-30 日本電気株式会社 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964648A (en) * 1958-12-24 1960-12-13 Bell Telephone Labor Inc Semiconductor capacitor
NL243218A (enExample) * 1958-12-24
NL265382A (enExample) * 1960-03-08
US3045129A (en) * 1960-12-08 1962-07-17 Bell Telephone Labor Inc Semiconductor tunnel device
US3303059A (en) * 1964-06-29 1967-02-07 Ibm Methods of improving electrical characteristics of semiconductor devices and products so produced
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3454894A (en) * 1965-11-24 1969-07-08 Leeds & Northrup Co Stabilization of drain-electrode current of insulated-gate field-effect transistor
US3439236A (en) * 1965-12-09 1969-04-15 Rca Corp Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4630082A (en) * 1979-03-12 1986-12-16 Clarion Co., Ltd. Semiconductor device with multi-electrode construction equivalent to variable capacitance diode

Also Published As

Publication number Publication date
DE2114363A1 (de) 1971-10-21
FR2085770A1 (enExample) 1971-12-31
NL7104259A (enExample) 1971-10-05
US3604990A (en) 1971-09-14

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees