NL7104259A - - Google Patents

Info

Publication number
NL7104259A
NL7104259A NL7104259A NL7104259A NL7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A
Authority
NL
Netherlands
Application number
NL7104259A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL7104259A publication Critical patent/NL7104259A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
NL7104259A 1970-04-01 1971-03-30 NL7104259A (xx)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2465370A 1970-04-01 1970-04-01

Publications (1)

Publication Number Publication Date
NL7104259A true NL7104259A (xx) 1971-10-05

Family

ID=21821708

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7104259A NL7104259A (xx) 1970-04-01 1971-03-30

Country Status (5)

Country Link
US (1) US3604990A (xx)
DE (1) DE2114363A1 (xx)
FR (1) FR2085770A1 (xx)
GB (1) GB1332045A (xx)
NL (1) NL7104259A (xx)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767981A (en) * 1971-06-04 1973-10-23 Signetics Corp High voltage planar diode structure and method
US3868187A (en) * 1972-08-31 1975-02-25 Tokyo Shibaura Electric Co Avalanche injection type mos memory
US3808472A (en) * 1972-12-29 1974-04-30 Gen Electric Variable capacitance semiconductor devices
DE2703877C2 (de) * 1977-01-31 1982-06-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung
DE2706623A1 (de) * 1977-02-16 1978-08-17 Siemens Ag Mis-fet fuer hohe source-drain-spannungen
JPS55120175A (en) * 1979-03-12 1980-09-16 Clarion Co Ltd Variable capacitance diode with plural super-capacitance variable electrode structures
US4529994A (en) * 1981-12-17 1985-07-16 Clarion Co., Ltd. Variable capacitor with single depletion layer
US4903086A (en) * 1988-01-19 1990-02-20 E-Systems, Inc. Varactor tuning diode with inversion layer
US5192871A (en) * 1991-10-15 1993-03-09 Motorola, Inc. Voltage variable capacitor having amorphous dielectric film
GB9416900D0 (en) * 1994-08-20 1994-10-12 Philips Electronics Uk Ltd A variable capacitance semiconductor diode
JP2658913B2 (ja) * 1994-10-28 1997-09-30 日本電気株式会社 半導体装置およびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2964648A (en) * 1958-12-24 1960-12-13 Bell Telephone Labor Inc Semiconductor capacitor
NL243218A (xx) * 1958-12-24
NL265382A (xx) * 1960-03-08
US3045129A (en) * 1960-12-08 1962-07-17 Bell Telephone Labor Inc Semiconductor tunnel device
US3303059A (en) * 1964-06-29 1967-02-07 Ibm Methods of improving electrical characteristics of semiconductor devices and products so produced
US3339128A (en) * 1964-07-31 1967-08-29 Rca Corp Insulated offset gate field effect transistor
US3454894A (en) * 1965-11-24 1969-07-08 Leeds & Northrup Co Stabilization of drain-electrode current of insulated-gate field-effect transistor
US3439236A (en) * 1965-12-09 1969-04-15 Rca Corp Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component
US3401349A (en) * 1966-11-02 1968-09-10 Rca Corp Wide band high frequency amplifier

Also Published As

Publication number Publication date
US3604990A (en) 1971-09-14
GB1332045A (en) 1973-10-03
DE2114363A1 (de) 1971-10-21
FR2085770A1 (xx) 1971-12-31

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