NL7104259A - - Google Patents
Info
- Publication number
- NL7104259A NL7104259A NL7104259A NL7104259A NL7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A NL 7104259 A NL7104259 A NL 7104259A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US2465370A | 1970-04-01 | 1970-04-01 |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7104259A true NL7104259A (xx) | 1971-10-05 |
Family
ID=21821708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7104259A NL7104259A (xx) | 1970-04-01 | 1971-03-30 |
Country Status (5)
Country | Link |
---|---|
US (1) | US3604990A (xx) |
DE (1) | DE2114363A1 (xx) |
FR (1) | FR2085770A1 (xx) |
GB (1) | GB1332045A (xx) |
NL (1) | NL7104259A (xx) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3767981A (en) * | 1971-06-04 | 1973-10-23 | Signetics Corp | High voltage planar diode structure and method |
US3868187A (en) * | 1972-08-31 | 1975-02-25 | Tokyo Shibaura Electric Co | Avalanche injection type mos memory |
US3808472A (en) * | 1972-12-29 | 1974-04-30 | Gen Electric | Variable capacitance semiconductor devices |
DE2703877C2 (de) * | 1977-01-31 | 1982-06-03 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | MIS-Transistor von kurzer Kanallänge und Verfahren zu seiner Herstellung |
DE2706623A1 (de) * | 1977-02-16 | 1978-08-17 | Siemens Ag | Mis-fet fuer hohe source-drain-spannungen |
JPS55120175A (en) * | 1979-03-12 | 1980-09-16 | Clarion Co Ltd | Variable capacitance diode with plural super-capacitance variable electrode structures |
US4529994A (en) * | 1981-12-17 | 1985-07-16 | Clarion Co., Ltd. | Variable capacitor with single depletion layer |
US4903086A (en) * | 1988-01-19 | 1990-02-20 | E-Systems, Inc. | Varactor tuning diode with inversion layer |
US5192871A (en) * | 1991-10-15 | 1993-03-09 | Motorola, Inc. | Voltage variable capacitor having amorphous dielectric film |
GB9416900D0 (en) * | 1994-08-20 | 1994-10-12 | Philips Electronics Uk Ltd | A variable capacitance semiconductor diode |
JP2658913B2 (ja) * | 1994-10-28 | 1997-09-30 | 日本電気株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2964648A (en) * | 1958-12-24 | 1960-12-13 | Bell Telephone Labor Inc | Semiconductor capacitor |
NL243218A (xx) * | 1958-12-24 | |||
NL265382A (xx) * | 1960-03-08 | |||
US3045129A (en) * | 1960-12-08 | 1962-07-17 | Bell Telephone Labor Inc | Semiconductor tunnel device |
US3303059A (en) * | 1964-06-29 | 1967-02-07 | Ibm | Methods of improving electrical characteristics of semiconductor devices and products so produced |
US3339128A (en) * | 1964-07-31 | 1967-08-29 | Rca Corp | Insulated offset gate field effect transistor |
US3454894A (en) * | 1965-11-24 | 1969-07-08 | Leeds & Northrup Co | Stabilization of drain-electrode current of insulated-gate field-effect transistor |
US3439236A (en) * | 1965-12-09 | 1969-04-15 | Rca Corp | Insulated-gate field-effect transistor with critical bulk characteristics for use as an oscillator component |
US3401349A (en) * | 1966-11-02 | 1968-09-10 | Rca Corp | Wide band high frequency amplifier |
-
1970
- 1970-04-01 US US24653A patent/US3604990A/en not_active Expired - Lifetime
-
1971
- 1971-03-24 DE DE19712114363 patent/DE2114363A1/de active Pending
- 1971-03-30 NL NL7104259A patent/NL7104259A/xx unknown
- 1971-04-01 FR FR7111460A patent/FR2085770A1/fr not_active Withdrawn
- 1971-04-19 GB GB2592671*A patent/GB1332045A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3604990A (en) | 1971-09-14 |
GB1332045A (en) | 1973-10-03 |
DE2114363A1 (de) | 1971-10-21 |
FR2085770A1 (xx) | 1971-12-31 |