DE202004021874U1 - Eine lichtemittierende Vorrichtung unter Verwendung eines Nitridhalbleiters - Google Patents

Eine lichtemittierende Vorrichtung unter Verwendung eines Nitridhalbleiters Download PDF

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Publication number
DE202004021874U1
DE202004021874U1 DE202004021874U DE202004021874U DE202004021874U1 DE 202004021874 U1 DE202004021874 U1 DE 202004021874U1 DE 202004021874 U DE202004021874 U DE 202004021874U DE 202004021874 U DE202004021874 U DE 202004021874U DE 202004021874 U1 DE202004021874 U1 DE 202004021874U1
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layer
gan
electrode contact
compound semiconductor
semiconductor device
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DE202004021874U
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LG Innotek Co Ltd
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LG Innotek Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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DE202004021874U 2003-06-25 2004-06-21 Eine lichtemittierende Vorrichtung unter Verwendung eines Nitridhalbleiters Expired - Lifetime DE202004021874U1 (de)

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KR10-2003-0041409A KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법
KR10-2003-0041409 2003-06-25

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DE202004021874U1 true DE202004021874U1 (de) 2012-01-18

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US (2) US7193236B2 (https=)
EP (1) EP1636858B1 (https=)
JP (2) JP2006510234A (https=)
KR (1) KR100525545B1 (https=)
CN (2) CN100468793C (https=)
DE (1) DE202004021874U1 (https=)
WO (1) WO2004114421A1 (https=)

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Also Published As

Publication number Publication date
WO2004114421A1 (en) 2004-12-29
US20050236631A1 (en) 2005-10-27
EP1636858A4 (en) 2007-01-24
JP2006510234A (ja) 2006-03-23
CN100468793C (zh) 2009-03-11
US7691657B2 (en) 2010-04-06
US20060081831A1 (en) 2006-04-20
CN101179106B (zh) 2013-01-23
JP2008182284A (ja) 2008-08-07
CN101179106A (zh) 2008-05-14
US7193236B2 (en) 2007-03-20
EP1636858B1 (en) 2016-11-16
CN1698212A (zh) 2005-11-16
KR100525545B1 (ko) 2005-10-31
EP1636858A1 (en) 2006-03-22
KR20050000846A (ko) 2005-01-06

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