KR100525545B1 - 질화물 반도체 발광소자 및 그 제조방법 - Google Patents

질화물 반도체 발광소자 및 그 제조방법 Download PDF

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Publication number
KR100525545B1
KR100525545B1 KR10-2003-0041409A KR20030041409A KR100525545B1 KR 100525545 B1 KR100525545 B1 KR 100525545B1 KR 20030041409 A KR20030041409 A KR 20030041409A KR 100525545 B1 KR100525545 B1 KR 100525545B1
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KR
South Korea
Prior art keywords
layer
gan
nitride semiconductor
doped
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-2003-0041409A
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English (en)
Korean (ko)
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KR20050000846A (ko
Inventor
이석헌
Original Assignee
엘지이노텍 주식회사
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Priority to KR10-2003-0041409A priority Critical patent/KR100525545B1/ko
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to CN200710196586.3A priority patent/CN101179106B/zh
Priority to DE202004021874U priority patent/DE202004021874U1/de
Priority to US10/517,819 priority patent/US7193236B2/en
Priority to JP2005518142A priority patent/JP2006510234A/ja
Priority to CNB2004800003288A priority patent/CN100468793C/zh
Priority to PCT/KR2004/001480 priority patent/WO2004114421A1/en
Priority to EP04737100.0A priority patent/EP1636858B1/en
Publication of KR20050000846A publication Critical patent/KR20050000846A/ko
Application granted granted Critical
Publication of KR100525545B1 publication Critical patent/KR100525545B1/ko
Priority to US11/288,310 priority patent/US7691657B2/en
Priority to JP2008111431A priority patent/JP2008182284A/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers

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  • Led Devices (AREA)
KR10-2003-0041409A 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법 Expired - Fee Related KR100525545B1 (ko)

Priority Applications (10)

Application Number Priority Date Filing Date Title
KR10-2003-0041409A KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법
EP04737100.0A EP1636858B1 (en) 2003-06-25 2004-06-21 Light emitting device using nitride semiconductor and fabrication method of the same
US10/517,819 US7193236B2 (en) 2003-06-25 2004-06-21 Light emitting device using nitride semiconductor and fabrication method of the same
JP2005518142A JP2006510234A (ja) 2003-06-25 2004-06-21 窒化物半導体の発光素子及びその製造方法
CNB2004800003288A CN100468793C (zh) 2003-06-25 2004-06-21 使用氮化物半导体的发光器件和其制造方法
PCT/KR2004/001480 WO2004114421A1 (en) 2003-06-25 2004-06-21 A light emitting device using nitride semiconductor and fabrication method of the same
CN200710196586.3A CN101179106B (zh) 2003-06-25 2004-06-21 使用氮化物半导体的发光器件和其制造方法
DE202004021874U DE202004021874U1 (de) 2003-06-25 2004-06-21 Eine lichtemittierende Vorrichtung unter Verwendung eines Nitridhalbleiters
US11/288,310 US7691657B2 (en) 2003-06-25 2005-11-29 Light emitting device using nitride semiconductor and fabrication method of the same
JP2008111431A JP2008182284A (ja) 2003-06-25 2008-04-22 窒化物半導体の発光素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2003-0041409A KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법

Publications (2)

Publication Number Publication Date
KR20050000846A KR20050000846A (ko) 2005-01-06
KR100525545B1 true KR100525545B1 (ko) 2005-10-31

Family

ID=36165438

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-2003-0041409A Expired - Fee Related KR100525545B1 (ko) 2003-06-25 2003-06-25 질화물 반도체 발광소자 및 그 제조방법

Country Status (7)

Country Link
US (2) US7193236B2 (https=)
EP (1) EP1636858B1 (https=)
JP (2) JP2006510234A (https=)
KR (1) KR100525545B1 (https=)
CN (2) CN100468793C (https=)
DE (1) DE202004021874U1 (https=)
WO (1) WO2004114421A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100997908B1 (ko) 2008-09-10 2010-12-02 박은현 3족 질화물 반도체 발광소자
KR20120052744A (ko) * 2010-11-16 2012-05-24 엘지이노텍 주식회사 발광소자

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KR100525545B1 (ko) * 2003-06-25 2005-10-31 엘지이노텍 주식회사 질화물 반도체 발광소자 및 그 제조방법
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KR100997908B1 (ko) 2008-09-10 2010-12-02 박은현 3족 질화물 반도체 발광소자
KR20120052744A (ko) * 2010-11-16 2012-05-24 엘지이노텍 주식회사 발광소자
KR101710892B1 (ko) * 2010-11-16 2017-02-28 엘지이노텍 주식회사 발광소자

Also Published As

Publication number Publication date
WO2004114421A1 (en) 2004-12-29
US20050236631A1 (en) 2005-10-27
EP1636858A4 (en) 2007-01-24
JP2006510234A (ja) 2006-03-23
CN100468793C (zh) 2009-03-11
US7691657B2 (en) 2010-04-06
US20060081831A1 (en) 2006-04-20
CN101179106B (zh) 2013-01-23
JP2008182284A (ja) 2008-08-07
CN101179106A (zh) 2008-05-14
US7193236B2 (en) 2007-03-20
EP1636858B1 (en) 2016-11-16
CN1698212A (zh) 2005-11-16
DE202004021874U1 (de) 2012-01-18
EP1636858A1 (en) 2006-03-22
KR20050000846A (ko) 2005-01-06

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