DE19960506A1 - Vernetzende Monomere für ein Photoresist und Verfahren zur Herstellung von Photoresist-Polymeren unter Verwendung derselben - Google Patents

Vernetzende Monomere für ein Photoresist und Verfahren zur Herstellung von Photoresist-Polymeren unter Verwendung derselben

Info

Publication number
DE19960506A1
DE19960506A1 DE19960506A DE19960506A DE19960506A1 DE 19960506 A1 DE19960506 A1 DE 19960506A1 DE 19960506 A DE19960506 A DE 19960506A DE 19960506 A DE19960506 A DE 19960506A DE 19960506 A1 DE19960506 A1 DE 19960506A1
Authority
DE
Germany
Prior art keywords
branched
straight
photoresist
hydroxyl group
chemical formula
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19960506A
Other languages
German (de)
English (en)
Inventor
Jae Chang Jung
Keun Kyu Kong
Min Ho Jung
Geun Su Lee
Ki Ho Baik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of DE19960506A1 publication Critical patent/DE19960506A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54Acrylic acid esters; Methacrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10Esters
    • C08F22/1006Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE19960506A 1998-12-31 1999-12-15 Vernetzende Monomere für ein Photoresist und Verfahren zur Herstellung von Photoresist-Polymeren unter Verwendung derselben Withdrawn DE19960506A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0063793A KR100362937B1 (ko) 1998-12-31 1998-12-31 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물

Publications (1)

Publication Number Publication Date
DE19960506A1 true DE19960506A1 (de) 2000-09-07

Family

ID=19570347

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19960506A Withdrawn DE19960506A1 (de) 1998-12-31 1999-12-15 Vernetzende Monomere für ein Photoresist und Verfahren zur Herstellung von Photoresist-Polymeren unter Verwendung derselben

Country Status (9)

Country Link
JP (1) JP4001445B2 (enrdf_load_stackoverflow)
KR (1) KR100362937B1 (enrdf_load_stackoverflow)
CN (1) CN1303114C (enrdf_load_stackoverflow)
DE (1) DE19960506A1 (enrdf_load_stackoverflow)
FR (1) FR2788062B1 (enrdf_load_stackoverflow)
GB (1) GB2345286B (enrdf_load_stackoverflow)
IT (1) IT1308679B1 (enrdf_load_stackoverflow)
NL (1) NL1013916C2 (enrdf_load_stackoverflow)
TW (1) TWI222968B (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
KR100557608B1 (ko) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100557609B1 (ko) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100647379B1 (ko) 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
KR100520183B1 (ko) * 1999-08-23 2005-10-10 주식회사 하이닉스반도체 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
KR100546110B1 (ko) * 2000-01-21 2006-01-24 주식회사 하이닉스반도체 포토레지스트 가교제 및 이를 함유하는 포토레지스트 조성물
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR20020082006A (ko) * 2001-04-23 2002-10-30 금호석유화학 주식회사 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
JP4979477B2 (ja) * 2004-03-08 2012-07-18 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
US20070031758A1 (en) * 2005-08-03 2007-02-08 Jsr Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
JP5233985B2 (ja) * 2007-02-26 2013-07-10 Jsr株式会社 微細パターン形成用樹脂組成物及び微細パターン形成方法
JP6983766B2 (ja) * 2015-09-28 2021-12-17 スリーエム イノベイティブ プロパティズ カンパニー 開裂可能な架橋剤を含むパターン化されたフィルム物品及び方法
CN116102938B (zh) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
GB1277674A (en) * 1969-08-04 1972-06-14 Ford Motor Co Painting of polyolefins
JPS5713444A (en) * 1980-06-27 1982-01-23 Tamura Kaken Kk Photosensitive composition
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Also Published As

Publication number Publication date
KR100362937B1 (ko) 2003-10-04
FR2788062A1 (fr) 2000-07-07
JP4001445B2 (ja) 2007-10-31
FR2788062B1 (fr) 2004-09-10
KR20000047041A (ko) 2000-07-25
NL1013916A1 (nl) 2000-07-03
CN1303114C (zh) 2007-03-07
NL1013916C2 (nl) 2002-12-03
JP2000199951A (ja) 2000-07-18
GB2345286A (en) 2000-07-05
IT1308679B1 (it) 2002-01-09
GB9929650D0 (en) 2000-02-09
ITTO991137A1 (it) 2001-06-21
CN1258670A (zh) 2000-07-05
TWI222968B (en) 2004-11-01
ITTO991137A0 (it) 1999-12-21
GB2345286B (en) 2004-06-30

Similar Documents

Publication Publication Date Title
DE19960506A1 (de) Vernetzende Monomere für ein Photoresist und Verfahren zur Herstellung von Photoresist-Polymeren unter Verwendung derselben
DE4409220C2 (de) Musterbildungsmaterial und Musterbildungsverfahren
DE69929879T2 (de) Herstellung von acetal-derivatisierten hydroxylaromatischen polymeren und ihre verwendung in strahlungsempfindlichen formulierungen
EP0447868B1 (de) Strahlungsempfindliches Gemisch
DE19956531A1 (de) Vernetzer für ein Photoresist und diesen enthaltende Photoresistzusammensetzung
EP0342498B1 (de) Positiv und negativ arbeitende strahlungsempfindliche Gemische sowie Verfahren zur Herstellung von Reliefmustern
DE69726542T2 (de) Chemisch verstärkte Resistzusammensetzung
DE19637425B4 (de) Neue N-Vinyllactam-Derivate und deren Polymere
DE69618752T2 (de) Resistzusammensetzung mit strahlungsempfindlichem Säuergenerator
DE69926963T2 (de) Chemisch verstärkte Positivphotoresistzusammensetzungen
DE3721741A1 (de) Strahlungsempfindliches gemisch fuer lichtempfindliche beschichtungsmaterialien
DE19721694B4 (de) N-Vinyllactamderivate enthaltende Copolymere, Herstellungsverfahren hierfür und hieraus hergestellte Photoresists
DE19860654A1 (de) Copolymerharz, seine Herstellung und ein Photoresist, welches dieses verwendet
DE69927104T2 (de) Polymer für lichtempfindichen Resist und dieses Polymer enthaltende Resistzusammensetzung
DE10040963A1 (de) Vernetzermonomer, umfassend eine Doppelbindung, und ein dieses enthaltendes Photoresist-Copolymer
DE19758244A1 (de) Verfahren und Vorrichtung unter Verwendung eines ArF-Photoresistlacks
DE19919794A1 (de) Polymer und dessen Verwendung in einem Verfahren zur Bildung eines Mikromusters
DE19860767A1 (de) Halbleitervorrichtung unter Verwendung eines polymerhaltigen Photoresists und Verfahren zu dessen Herstellung
DE19753276A1 (de) Amid- oder Imid- enthaltendes Copolymer, Herstellungsverfahren für das Copolymer und dieses Copolymer enthaltendes Photoresist
DE19725348A1 (de) Photosensitive Polymerverbindung und diese enthaltende Photoresistzusammensetzung
DE112004000021T5 (de) Positiv-Photoresist-Zusammensetzung vom chemisch verstärkten Typ und Methode zur Bildung eines Resistmusters
EP0553737B1 (de) Strahlungsempfindliches Gemisch
DE19907700B4 (de) Polymermaterial für ein Photoresist, dieses enthaltende Photoresistzusammensetzung und Herstellungsverfahren hierfür
DE69123873T2 (de) Photoresistzusammensetzung
DE19940515A1 (de) Neue Monomere für Photoresiste, deren Polymere und Photoresist-Zusammensetzungen, die diese verwenden

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee

Effective date: 20140701