NL1013916C2 - Verknopende monomeren voor een fotobeschermlaag en werkwijze voor het bereiden van fotobeschermlaag-polymeren waarbij deze gebruikt worden. - Google Patents

Verknopende monomeren voor een fotobeschermlaag en werkwijze voor het bereiden van fotobeschermlaag-polymeren waarbij deze gebruikt worden. Download PDF

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Publication number
NL1013916C2
NL1013916C2 NL1013916A NL1013916A NL1013916C2 NL 1013916 C2 NL1013916 C2 NL 1013916C2 NL 1013916 A NL1013916 A NL 1013916A NL 1013916 A NL1013916 A NL 1013916A NL 1013916 C2 NL1013916 C2 NL 1013916C2
Authority
NL
Netherlands
Prior art keywords
straight
branched chain
hydroxyl group
photo
branched
Prior art date
Application number
NL1013916A
Other languages
English (en)
Dutch (nl)
Other versions
NL1013916A1 (nl
Inventor
Jae Chang Jung
Geun Su Lee
Min Ho Jung
Ki Ho Baik
Keun Kyu Kong
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1013916A1 publication Critical patent/NL1013916A1/xx
Application granted granted Critical
Publication of NL1013916C2 publication Critical patent/NL1013916C2/nl

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54Acrylic acid esters; Methacrylic acid esters
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10Esters
    • C08F22/1006Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
NL1013916A 1998-12-31 1999-12-22 Verknopende monomeren voor een fotobeschermlaag en werkwijze voor het bereiden van fotobeschermlaag-polymeren waarbij deze gebruikt worden. NL1013916C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR19980063793 1998-12-31
KR10-1998-0063793A KR100362937B1 (ko) 1998-12-31 1998-12-31 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물

Publications (2)

Publication Number Publication Date
NL1013916A1 NL1013916A1 (nl) 2000-07-03
NL1013916C2 true NL1013916C2 (nl) 2002-12-03

Family

ID=19570347

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1013916A NL1013916C2 (nl) 1998-12-31 1999-12-22 Verknopende monomeren voor een fotobeschermlaag en werkwijze voor het bereiden van fotobeschermlaag-polymeren waarbij deze gebruikt worden.

Country Status (9)

Country Link
JP (1) JP4001445B2 (enrdf_load_stackoverflow)
KR (1) KR100362937B1 (enrdf_load_stackoverflow)
CN (1) CN1303114C (enrdf_load_stackoverflow)
DE (1) DE19960506A1 (enrdf_load_stackoverflow)
FR (1) FR2788062B1 (enrdf_load_stackoverflow)
GB (1) GB2345286B (enrdf_load_stackoverflow)
IT (1) IT1308679B1 (enrdf_load_stackoverflow)
NL (1) NL1013916C2 (enrdf_load_stackoverflow)
TW (1) TWI222968B (enrdf_load_stackoverflow)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
KR100557608B1 (ko) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100557609B1 (ko) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100647379B1 (ko) 1999-07-30 2006-11-17 주식회사 하이닉스반도체 신규의 포토레지스트용 단량체, 그의 공중합체 및 이를 이용한포토레지스트 조성물
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
KR100520183B1 (ko) * 1999-08-23 2005-10-10 주식회사 하이닉스반도체 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
KR100546110B1 (ko) * 2000-01-21 2006-01-24 주식회사 하이닉스반도체 포토레지스트 가교제 및 이를 함유하는 포토레지스트 조성물
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR20020082006A (ko) * 2001-04-23 2002-10-30 금호석유화학 주식회사 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Euv용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
JP4979477B2 (ja) * 2004-03-08 2012-07-18 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
US20070031758A1 (en) * 2005-08-03 2007-02-08 Jsr Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
JP5233985B2 (ja) * 2007-02-26 2013-07-10 Jsr株式会社 微細パターン形成用樹脂組成物及び微細パターン形成方法
JP6983766B2 (ja) * 2015-09-28 2021-12-17 スリーエム イノベイティブ プロパティズ カンパニー 開裂可能な架橋剤を含むパターン化されたフィルム物品及び方法
CN116102938B (zh) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
US4293636A (en) * 1980-06-27 1981-10-06 Tamura Kaken Co., Ltd. Photopolymerizable polyester containing compositions
EP0047184A2 (en) * 1980-09-03 1982-03-10 E.I. Du Pont De Nemours And Company Radiation polymerizable composition for forming heat-resistant relief structures on electrical devices such as semiconductors and capacitors
EP0702270A2 (en) * 1994-09-13 1996-03-20 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1277674A (en) * 1969-08-04 1972-06-14 Ford Motor Co Painting of polyolefins
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
US4293636A (en) * 1980-06-27 1981-10-06 Tamura Kaken Co., Ltd. Photopolymerizable polyester containing compositions
EP0047184A2 (en) * 1980-09-03 1982-03-10 E.I. Du Pont De Nemours And Company Radiation polymerizable composition for forming heat-resistant relief structures on electrical devices such as semiconductors and capacitors
EP0702270A2 (en) * 1994-09-13 1996-03-20 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Also Published As

Publication number Publication date
KR100362937B1 (ko) 2003-10-04
DE19960506A1 (de) 2000-09-07
FR2788062A1 (fr) 2000-07-07
JP4001445B2 (ja) 2007-10-31
FR2788062B1 (fr) 2004-09-10
KR20000047041A (ko) 2000-07-25
NL1013916A1 (nl) 2000-07-03
CN1303114C (zh) 2007-03-07
JP2000199951A (ja) 2000-07-18
GB2345286A (en) 2000-07-05
IT1308679B1 (it) 2002-01-09
GB9929650D0 (en) 2000-02-09
ITTO991137A1 (it) 2001-06-21
CN1258670A (zh) 2000-07-05
TWI222968B (en) 2004-11-01
ITTO991137A0 (it) 1999-12-21
GB2345286B (en) 2004-06-30

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20020923

PD2B A search report has been drawn up
MM Lapsed because of non-payment of the annual fee

Effective date: 20160101