IT1308679B1 - Monomeri di reticolazione per fotoresist e procedimento per lapreparazione di polimeri fotoresist utilizzanti tali monomeri. - Google Patents

Monomeri di reticolazione per fotoresist e procedimento per lapreparazione di polimeri fotoresist utilizzanti tali monomeri.

Info

Publication number
IT1308679B1
IT1308679B1 IT1999TO001137A ITTO991137A IT1308679B1 IT 1308679 B1 IT1308679 B1 IT 1308679B1 IT 1999TO001137 A IT1999TO001137 A IT 1999TO001137A IT TO991137 A ITTO991137 A IT TO991137A IT 1308679 B1 IT1308679 B1 IT 1308679B1
Authority
IT
Italy
Prior art keywords
monomers
photoresist
reticulation
procedure
preparation
Prior art date
Application number
IT1999TO001137A
Other languages
English (en)
Inventor
Jae Chang Jung
Keun Kyu Kong
Min Ho Jung
Geun Su Lee
Ki Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of ITTO991137A0 publication Critical patent/ITTO991137A0/it
Publication of ITTO991137A1 publication Critical patent/ITTO991137A1/it
Application granted granted Critical
Publication of IT1308679B1 publication Critical patent/IT1308679B1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F22/00—Homopolymers and copolymers of compounds having one or more unsaturated aliphatic radicals each having only one carbon-to-carbon double bond, and at least one being terminated by a carboxyl radical and containing at least one other carboxyl radical in the molecule; Salts, anhydrides, esters, amides, imides or nitriles thereof
    • C08F22/10—Esters
    • C08F22/1006—Esters of polyhydric alcohols or polyhydric phenols, e.g. ethylene glycol dimethacrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
IT1999TO001137A 1998-12-31 1999-12-21 Monomeri di reticolazione per fotoresist e procedimento per lapreparazione di polimeri fotoresist utilizzanti tali monomeri. IT1308679B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1998-0063793A KR100362937B1 (ko) 1998-12-31 1998-12-31 신규의포토레지스트가교제,이를포함하는포토레지스트중합체및포토레지스트조성물

Publications (3)

Publication Number Publication Date
ITTO991137A0 ITTO991137A0 (it) 1999-12-21
ITTO991137A1 ITTO991137A1 (it) 2001-06-21
IT1308679B1 true IT1308679B1 (it) 2002-01-09

Family

ID=19570347

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1999TO001137A IT1308679B1 (it) 1998-12-31 1999-12-21 Monomeri di reticolazione per fotoresist e procedimento per lapreparazione di polimeri fotoresist utilizzanti tali monomeri.

Country Status (9)

Country Link
JP (1) JP4001445B2 (it)
KR (1) KR100362937B1 (it)
CN (1) CN1303114C (it)
DE (1) DE19960506A1 (it)
FR (1) FR2788062B1 (it)
GB (1) GB2345286B (it)
IT (1) IT1308679B1 (it)
NL (1) NL1013916C2 (it)
TW (1) TWI222968B (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7208260B2 (en) * 1998-12-31 2007-04-24 Hynix Semiconductor Inc. Cross-linking monomers for photoresist, and process for preparing photoresist polymers using the same
KR100557608B1 (ko) * 1999-02-10 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
KR100557609B1 (ko) * 1999-02-22 2006-03-10 주식회사 하이닉스반도체 신규의 포토레지스트 가교제 및 이를 이용한 포토레지스트 조성물
US6818376B2 (en) 1999-08-23 2004-11-16 Hynix Semiconductor Inc. Cross-linker monomer comprising double bond and photoresist copolymer containing the same
KR100520183B1 (ko) 1999-08-23 2005-10-10 주식회사 하이닉스반도체 두 개의 이중결합을 가지는 가교제를 단량체로 포함하는 포토레지스트용 공중합체
KR100546110B1 (ko) * 2000-01-21 2006-01-24 주식회사 하이닉스반도체 포토레지스트 가교제 및 이를 함유하는 포토레지스트 조성물
US6664022B1 (en) * 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
KR20020082006A (ko) * 2001-04-23 2002-10-30 금호석유화학 주식회사 신규한 산-민감성 중합체 및 이를 함유하는 레지스트 조성물
US7138218B2 (en) 2001-12-18 2006-11-21 Hynix Semiconductor Inc. Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator
US7338742B2 (en) 2003-10-08 2008-03-04 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US7270937B2 (en) 2003-10-17 2007-09-18 Hynix Semiconductor Inc. Over-coating composition for photoresist and process for forming photoresist pattern using the same
KR100680405B1 (ko) 2003-11-19 2007-02-08 주식회사 하이닉스반도체 Ｅｕｖ용 포토레지스트 조성물 및 이를 이용한포토레지스트 패턴 형성 방법
JP4979477B2 (ja) * 2004-03-08 2012-07-18 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターン製造方法、並びにレジスト用重合体用原料化合物
US20070031758A1 (en) * 2005-08-03 2007-02-08 Jsr Corporation Positive-type radiation-sensitive resin composition for producing a metal-plating formed material, transcription film and production method of a metal-plating formed material
KR100694412B1 (ko) 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
US7745339B2 (en) 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
EP2133747A4 (en) * 2007-02-26 2011-01-12 Jsr Corp RESIN COMPOSITION FOR MICRO-MOTIF FORMATION AND METHOD FOR FORMING MICRO-MOTIFS
WO2017058528A1 (en) * 2015-09-28 2017-04-06 3M Innovative Properties Company Patterned film article comprising cleavable crosslinker and methods
CN116102938B (zh) * 2021-11-09 2023-10-20 上海新阳半导体材料股份有限公司 一种深紫外光刻用底部抗反射涂层及其制备方法和应用

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1275471A (en) * 1969-06-04 1972-05-24 Du Pont Improvements relating to photo-resists
GB1277674A (en) * 1969-08-04 1972-06-14 Ford Motor Co Painting of polyolefins
JPS5713444A (en) * 1980-06-27 1982-01-23 Tamura Kaken Kk Photosensitive composition
US4329419A (en) * 1980-09-03 1982-05-11 E. I. Du Pont De Nemours And Company Polymeric heat resistant photopolymerizable composition for semiconductors and capacitors
WO1992007022A1 (en) * 1990-10-23 1992-04-30 Atomic Energy Of Canada Limited Process for the preparation of cellulosic fibre-reinforced thermoplastic composite materials
US5777068A (en) * 1994-09-13 1998-07-07 Nippon Zeon Co., Ltd. Photosensitive polyimide resin composition

Also Published As

Publication number Publication date
CN1258670A (zh) 2000-07-05
TWI222968B (en) 2004-11-01
CN1303114C (zh) 2007-03-07
GB2345286A (en) 2000-07-05
ITTO991137A1 (it) 2001-06-21
FR2788062A1 (fr) 2000-07-07
DE19960506A1 (de) 2000-09-07
GB2345286B (en) 2004-06-30
JP4001445B2 (ja) 2007-10-31
FR2788062B1 (fr) 2004-09-10
JP2000199951A (ja) 2000-07-18
KR100362937B1 (ko) 2003-10-04
GB9929650D0 (en) 2000-02-09
KR20000047041A (ko) 2000-07-25
ITTO991137A0 (it) 1999-12-21
NL1013916A1 (nl) 2000-07-03
NL1013916C2 (nl) 2002-12-03

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