DE19845315B4 - Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung - Google Patents

Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung Download PDF

Info

Publication number
DE19845315B4
DE19845315B4 DE19845315A DE19845315A DE19845315B4 DE 19845315 B4 DE19845315 B4 DE 19845315B4 DE 19845315 A DE19845315 A DE 19845315A DE 19845315 A DE19845315 A DE 19845315A DE 19845315 B4 DE19845315 B4 DE 19845315B4
Authority
DE
Germany
Prior art keywords
trench
forming
conductive layer
trenches
oxide film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19845315A
Other languages
German (de)
English (en)
Other versions
DE19845315A1 (de
Inventor
Katsumi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to DE19860962A priority Critical patent/DE19860962B4/de
Publication of DE19845315A1 publication Critical patent/DE19845315A1/de
Application granted granted Critical
Publication of DE19845315B4 publication Critical patent/DE19845315B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE19845315A 1998-03-05 1998-10-01 Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung Expired - Lifetime DE19845315B4 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19860962A DE19860962B4 (de) 1998-03-05 1998-10-01 Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPP10-53427 1998-03-05
JP05342798A JP3705919B2 (ja) 1998-03-05 1998-03-05 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE19845315A1 DE19845315A1 (de) 1999-09-09
DE19845315B4 true DE19845315B4 (de) 2006-03-23

Family

ID=12942551

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19845315A Expired - Lifetime DE19845315B4 (de) 1998-03-05 1998-10-01 Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung

Country Status (4)

Country Link
US (3) US6661054B1 (enExample)
JP (1) JP3705919B2 (enExample)
KR (2) KR100317160B1 (enExample)
DE (1) DE19845315B4 (enExample)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3502531B2 (ja) * 1997-08-28 2004-03-02 株式会社ルネサステクノロジ 半導体装置の製造方法
JP5058406B2 (ja) * 2000-10-31 2012-10-24 ローム株式会社 半導体装置の製造方法
JP2002176177A (ja) * 2000-12-07 2002-06-21 Denso Corp 半導体装置及びその製造方法
DE10063443B4 (de) * 2000-12-20 2005-03-03 Infineon Technologies Ag Verfahren zur Herstellung einer Elektrode eines mittels Feldeffekt steuerbaren Halbleiterbauelements und mittels Feldeffekt steuerbares Halbleiterbauelement
EP1271654B1 (en) * 2001-02-01 2017-09-20 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
JP2002368220A (ja) * 2001-06-04 2002-12-20 Hitachi Ltd 半導体装置及びこれを用いた電源システム
US6882000B2 (en) * 2001-08-10 2005-04-19 Siliconix Incorporated Trench MIS device with reduced gate-to-drain capacitance
JP2004022941A (ja) * 2002-06-19 2004-01-22 Toshiba Corp 半導体装置
JP4219630B2 (ja) * 2002-07-17 2009-02-04 株式会社豊田中央研究所 トレンチゲート型半導体装置とその製造方法
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
US8629019B2 (en) * 2002-09-24 2014-01-14 Vishay-Siliconix Method of forming self aligned contacts for a power MOSFET
US8080459B2 (en) * 2002-09-24 2011-12-20 Vishay-Siliconix Self aligned contact in a semiconductor device and method of fabricating the same
KR100593445B1 (ko) * 2004-02-13 2006-06-28 삼성전자주식회사 채널부 홀들 사이에 채널 영역을 갖는 트랜지스터들 및 그제조방법들
US6960519B1 (en) 2004-06-25 2005-11-01 International Business Machines Corporation Interconnect structure improvements
KR100562657B1 (ko) * 2004-12-29 2006-03-20 주식회사 하이닉스반도체 리세스게이트 및 그를 구비한 반도체장치의 제조 방법
US9111754B2 (en) * 2005-07-26 2015-08-18 Vishay-Siliconix Floating gate structure with high electrostatic discharge performance
EP1908119B1 (de) * 2005-07-27 2012-04-18 Infineon Technologies Austria AG Halbleiterbauelement mit einer driftzone und einer driftsteuerzone
US8110868B2 (en) 2005-07-27 2012-02-07 Infineon Technologies Austria Ag Power semiconductor component with a low on-state resistance
US8461648B2 (en) * 2005-07-27 2013-06-11 Infineon Technologies Austria Ag Semiconductor component with a drift region and a drift control region
JP2007088010A (ja) * 2005-09-20 2007-04-05 Denso Corp 半導体装置およびその製造方法
JP4844077B2 (ja) * 2005-10-13 2011-12-21 株式会社デンソー 半導体装置の製造方法
JP4867333B2 (ja) * 2005-12-27 2012-02-01 三菱電機株式会社 炭化珪素半導体装置、及び炭化珪素半導体装置の製造方法
US7544545B2 (en) 2005-12-28 2009-06-09 Vishay-Siliconix Trench polysilicon diode
JP2008042166A (ja) * 2006-07-12 2008-02-21 Matsushita Electric Ind Co Ltd 縦型ゲート半導体装置及びその製造方法
US9437729B2 (en) 2007-01-08 2016-09-06 Vishay-Siliconix High-density power MOSFET with planarized metalization
US9947770B2 (en) 2007-04-03 2018-04-17 Vishay-Siliconix Self-aligned trench MOSFET and method of manufacture
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
JP4581011B2 (ja) 2008-01-25 2010-11-17 株式会社東芝 電気部品とその製造方法
US10600902B2 (en) 2008-02-13 2020-03-24 Vishay SIliconix, LLC Self-repairing field effect transisitor
JP5599388B2 (ja) * 2009-04-28 2014-10-01 三菱電機株式会社 電力用半導体装置
JP2010283132A (ja) 2009-06-04 2010-12-16 Mitsubishi Electric Corp 半導体装置
US9443974B2 (en) * 2009-08-27 2016-09-13 Vishay-Siliconix Super junction trench power MOSFET device fabrication
US9230810B2 (en) 2009-09-03 2016-01-05 Vishay-Siliconix System and method for substrate wafer back side and edge cross section seals
US9431530B2 (en) 2009-10-20 2016-08-30 Vishay-Siliconix Super-high density trench MOSFET
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
KR101388706B1 (ko) * 2012-08-30 2014-04-24 삼성전기주식회사 전력 반도체 소자 및 그 제조방법
JP2014075483A (ja) * 2012-10-04 2014-04-24 Sanken Electric Co Ltd 半導体装置及び半導体装置の製造方法
JP6218423B2 (ja) * 2013-04-25 2017-10-25 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
WO2016028943A1 (en) 2014-08-19 2016-02-25 Vishay-Siliconix Electronic circuit
KR102098996B1 (ko) 2014-08-19 2020-04-08 비쉐이-실리코닉스 초접합 금속 산화물 반도체 전계 효과 트랜지스터
JP6623772B2 (ja) * 2016-01-13 2019-12-25 富士電機株式会社 炭化珪素半導体装置の製造方法
JP2018152514A (ja) * 2017-03-14 2018-09-27 富士電機株式会社 半導体装置の製造方法および半導体装置
JP7135302B2 (ja) * 2017-11-08 2022-09-13 富士電機株式会社 炭化シリコン半導体装置及びその製造方法
US10529662B2 (en) * 2018-01-29 2020-01-07 International Business Machines Corporation Method and structure to construct cylindrical interconnects to reduce resistance
JP7048659B2 (ja) * 2020-04-07 2022-04-05 ローム株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130679A (ja) * 1993-10-28 1995-05-19 Nec Corp 半導体装置の製造方法
JPH07249769A (ja) * 1994-01-20 1995-09-26 Mitsubishi Electric Corp トレンチ構造を有する半導体装置およびその製造方法
JPH07263692A (ja) * 1994-02-04 1995-10-13 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0823092A (ja) * 1994-07-06 1996-01-23 Mitsubishi Electric Corp 半導体装置およびその製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4761385A (en) * 1987-02-10 1988-08-02 Motorola, Inc. Forming a trench capacitor
DE3851649T2 (de) * 1987-03-20 1995-05-04 Nippon Electric Co Aus einer Vielzahl von Eintransistorzellen bestehende dynamische Speichervorrichtung mit wahlfreiem Zugriff.
JPS6427252A (en) * 1987-04-13 1989-01-30 Nec Corp Semiconductor storage device
US4954854A (en) * 1989-05-22 1990-09-04 International Business Machines Corporation Cross-point lightly-doped drain-source trench transistor and fabrication process therefor
US5055900A (en) * 1989-10-11 1991-10-08 The Trustees Of Columbia University In The City Of New York Trench-defined charge-coupled device
JP3226669B2 (ja) 1993-07-27 2001-11-05 株式会社東芝 半導体装置
US5485031A (en) * 1993-11-22 1996-01-16 Actel Corporation Antifuse structure suitable for VLSI application
TW318961B (enExample) * 1994-05-04 1997-11-01 Nippon Precision Circuits
JP3338178B2 (ja) 1994-05-30 2002-10-28 株式会社東芝 半導体装置およびその製造方法
JP3155894B2 (ja) * 1994-09-29 2001-04-16 株式会社東芝 半導体装置およびその製造方法
JP2792467B2 (ja) * 1995-06-13 1998-09-03 日本電気株式会社 半導体装置の製造方法
US5689128A (en) * 1995-08-21 1997-11-18 Siliconix Incorporated High density trenched DMOS transistor
US5895766A (en) * 1995-09-20 1999-04-20 Micron Technology, Inc. Method of forming a field effect transistor
US5894149A (en) * 1996-04-11 1999-04-13 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having high breakdown voltage and method of manufacturing the same
JPH09331063A (ja) 1996-04-11 1997-12-22 Mitsubishi Electric Corp 高耐圧半導体装置およびその製造方法
US5661085A (en) * 1996-06-17 1997-08-26 Chartered Semiconductor Manufacturing Pte, Ltd. Method for forming a low contact leakage and low contact resistance integrated circuit device electrode
DE19638439C2 (de) * 1996-09-19 2000-06-15 Siemens Ag Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement und Herstellungsverfahren
US6025269A (en) * 1996-10-15 2000-02-15 Micron Technology, Inc. Method for depositioning a substantially void-free aluminum film over a refractory metal nitride layer
US5744395A (en) * 1996-10-16 1998-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Low resistance, self-aligned, titanium silicide structures, using a single rapid thermal anneal procedure
JP3976374B2 (ja) * 1997-07-11 2007-09-19 三菱電機株式会社 トレンチｍｏｓゲート構造を有する半導体装置及びその製造方法
US5834353A (en) * 1997-10-20 1998-11-10 Texas Instruments-Acer Incorporated Method of making deep sub-micron meter MOSFET with a high permitivity gate dielectric

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07130679A (ja) * 1993-10-28 1995-05-19 Nec Corp 半導体装置の製造方法
JPH07249769A (ja) * 1994-01-20 1995-09-26 Mitsubishi Electric Corp トレンチ構造を有する半導体装置およびその製造方法
JPH07263692A (ja) * 1994-02-04 1995-10-13 Mitsubishi Electric Corp 半導体装置の製造方法
JPH0823092A (ja) * 1994-07-06 1996-01-23 Mitsubishi Electric Corp 半導体装置およびその製造方法

Also Published As

Publication number Publication date
US7052954B2 (en) 2006-05-30
JP3705919B2 (ja) 2005-10-12
KR100318571B1 (ko) 2001-12-28
US6661054B1 (en) 2003-12-09
US20040094799A1 (en) 2004-05-20
KR19990076531A (ko) 1999-10-15
US7910987B2 (en) 2011-03-22
JPH11251589A (ja) 1999-09-17
KR20010078406A (ko) 2001-08-20
DE19845315A1 (de) 1999-09-09
KR100317160B1 (ko) 2002-06-20
US20060049457A1 (en) 2006-03-09

Similar Documents

Publication Publication Date Title
DE19845315B4 (de) Halbleitervorrichtung und Herstellungsverfahren der Halbleitervorrichtung
DE19807745B4 (de) Halbleitereinrichtung und Herstellungsverfahren einer Halbleitereinrichtung
DE19506386C2 (de) Halbleiterbauelement mit in Gräben angeordneten Steuerelektrodenschichten und Verfahren zu dessen Herstellung
DE102008005872B4 (de) Halbleitervorrichtung und Herstellungsverfahren dafür
DE19801999C2 (de) Halbleitereinrichtung mit hoher Spannungsfestigkeit
DE102007023885B4 (de) Siliziumcarbid-Halbleitervorrichtung vom Graben-MOS-Typ und Verfahren zur Herstellung derselben
EP1151478B1 (de) Mos-leistungsbauelement und verfahren zum herstellen desselben
DE102010042929A1 (de) Halbleitervorrichtung und deren Herstellungsverfahren
DE112018003459T5 (de) Halbleitervorrichtung und verfahren zum herstellen derselben
DE102015117469A1 (de) Verfahren zum herstellen einer halbleitervorrichtung mit grabengate durch verwenden einer screenoxidschicht
DE19649686A1 (de) Struktur und Herstellungsverfahren eines Hochspannungs-Metalloxid-Silizium-Feldeffekttransistors (MOSFET)
DE10203479A1 (de) Halbleitereinrichtung
DE102005052731A1 (de) Siliziumkarbidhalbleitervorrichtung und Verfahren zur Herstellung derselben
DE112006000522T5 (de) Halbleiterbauelement und Verfahren zu dessen Herstellung
DE19507146C2 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE102019216309A1 (de) Siliciumcarbid-halbleitervorrichtung und verfahren zur herstellung einer siliciumcarbid-halbleitervorrichtung
DE102014106094A1 (de) Halbleitervorrichtung mit einer Superjunctionstruktur mit einem, zwei oder mehreren Paaren von Kompensationsschichten
DE102010000113A1 (de) Halbleiterbauelement und Verfahren zur Herstellung
DE112018003086T5 (de) Halbleitervorrichtung und verfahren zur herstellung einerhalbleitervorrichtung
DE3242736A1 (de) Verfahren zum herstellen feldgesteuerter elemente mit in vertikalen kanaelen versenkten gittern, einschliesslich feldeffekt-transistoren und feldgesteuerten thyristoren
DE19964626B4 (de) Leistungshalbleiterbauelement mit halbisolierendem polykristallinem Silicium
DE102015101692A1 (de) Verfahren zum erzeugen eines grabens unter verwendung von epitaktischem lateralem überwachsen und tiefe vertikale grabenstruktur
DE102007009227A1 (de) Halbleiterbauelement mit gleichrichtenden Übergängen sowie Herstellungsverfahren zur Herstellung desselben
DE102006056809B9 (de) Anschlussstruktur für ein elektronisches Bauelement
DE112020006718B4 (de) Verfahren zur herstellung einer siliciumcarbid-halbleitereinheit

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8172 Supplementary division/partition in:

Ref document number: 19860962

Country of ref document: DE

Q171 Divided out to:

Ref document number: 19860962

Country of ref document: DE

8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
R071 Expiry of right