TW318961B - - Google Patents

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Publication number
TW318961B
TW318961B TW084102172A TW84102172A TW318961B TW 318961 B TW318961 B TW 318961B TW 084102172 A TW084102172 A TW 084102172A TW 84102172 A TW84102172 A TW 84102172A TW 318961 B TW318961 B TW 318961B
Authority
TW
Taiwan
Prior art keywords
region
semiconductor
layer
substrate
dielectric layer
Prior art date
Application number
TW084102172A
Other languages
English (en)
Chinese (zh)
Original Assignee
Nippon Precision Circuits
Chen James T
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=22895050&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=TW318961(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Nippon Precision Circuits, Chen James T filed Critical Nippon Precision Circuits
Application granted granted Critical
Publication of TW318961B publication Critical patent/TW318961B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/44—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a control gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/47—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a floating-gate layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/48—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with a tunnel dielectric layer also being used as part of the peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/49—Simultaneous manufacture of periphery and memory cells comprising different types of peripheral transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/42—Simultaneous manufacture of periphery and memory cells
    • H10B41/43—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor
    • H10B41/46—Simultaneous manufacture of periphery and memory cells comprising only one type of peripheral transistor with an inter-gate dielectric layer also being used as part of the peripheral transistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
TW084102172A 1994-05-04 1995-03-04 TW318961B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US23776194A 1994-05-04 1994-05-04

Publications (1)

Publication Number Publication Date
TW318961B true TW318961B (enExample) 1997-11-01

Family

ID=22895050

Family Applications (2)

Application Number Title Priority Date Filing Date
TW084102172A TW318961B (enExample) 1994-05-04 1995-03-04
TW086101953A TW360980B (en) 1994-05-04 1995-03-04 Single transistor EEPROM memory device

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW086101953A TW360980B (en) 1994-05-04 1995-03-04 Single transistor EEPROM memory device

Country Status (4)

Country Link
US (2) US5635416A (enExample)
JP (1) JP2928986B2 (enExample)
KR (1) KR0184632B1 (enExample)
TW (2) TW318961B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449045B (zh) * 2010-07-16 2014-08-11 Yield Microelectronics Corp Low cost electronic erasure can be rewritten read only memory array

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0144902B1 (ko) * 1995-04-17 1998-07-01 김광호 불휘발성 메모리장치 및 그 제조방법
JP2871593B2 (ja) * 1996-05-30 1999-03-17 日本電気株式会社 半導体記憶装置およびその製造方法
JPH10189777A (ja) * 1996-12-26 1998-07-21 Toshiba Corp 不揮発性半導体記憶装置の製造方法
US6201732B1 (en) 1997-01-02 2001-03-13 John M. Caywood Low voltage single CMOS electrically erasable read-only memory
US5986931A (en) 1997-01-02 1999-11-16 Caywood; John M. Low voltage single CMOS electrically erasable read-only memory
KR100604960B1 (ko) * 1997-03-28 2006-07-26 가부시키가이샤 히타치세이사쿠쇼 불휘발성 반도체 기억장치 및 그 제조방법 및 반도체 장치 및 그 제조방법
US6342715B1 (en) 1997-06-27 2002-01-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
EP0889520B1 (en) * 1997-07-03 2005-09-28 STMicroelectronics S.r.l. Method of fabrication a non-volatile semiconductor memory device with shielded single polysilicon gate memory part
JP3214432B2 (ja) * 1998-02-04 2001-10-02 日本電気株式会社 固体撮像装置の製造方法
JP3705919B2 (ja) * 1998-03-05 2005-10-12 三菱電機株式会社 半導体装置及びその製造方法
US6054348A (en) * 1998-05-15 2000-04-25 Taiwan Semiconductor Manufacturing Company Self-aligned source process
KR100276653B1 (ko) 1998-08-27 2001-01-15 윤종용 스프릿 게이트형 불휘발성 메모리 셀의 구동방법 및 이 셀들을구비한 반도체 메모리 장치의 구동방법
US6191444B1 (en) * 1998-09-03 2001-02-20 Micron Technology, Inc. Mini flash process and circuit
KR100284739B1 (ko) * 1998-09-25 2001-05-02 윤종용 불휘발성메모리장치제조방법
EP1020920B1 (en) * 1999-01-11 2010-06-02 Sel Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a driver TFT and a pixel TFT on a common substrate
US6180456B1 (en) 1999-02-17 2001-01-30 International Business Machines Corporation Triple polysilicon embedded NVRAM cell and method thereof
US6284637B1 (en) 1999-03-29 2001-09-04 Chartered Semiconductor Manufacturing Ltd. Method to fabricate a floating gate with a sloping sidewall for a flash memory
US6261906B1 (en) * 1999-08-03 2001-07-17 Worldwide Semiconductor Manufacturing Corp. Method for forming a flash memory cell with improved drain erase performance
US6235587B1 (en) 1999-10-13 2001-05-22 Advanced Micro Devices, Inc. Method of manufacturing a semiconductor device with reduced arc loss in peripheral circuitry region
JP2002064157A (ja) 2000-06-09 2002-02-28 Toshiba Corp 半導体メモリ集積回路及びその製造方法
US6590255B2 (en) * 2000-09-29 2003-07-08 Kabushiki Kaisha Toshiba Semiconductor memory device having memory cell section and peripheral circuit section and method of manufacturing the same
JP2003023114A (ja) * 2001-07-05 2003-01-24 Fujitsu Ltd 半導体集積回路装置およびその製造方法
JP2003163290A (ja) * 2001-11-27 2003-06-06 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6841446B2 (en) * 2002-01-09 2005-01-11 Macronix International Co., Ltd. Fabrication method for a flash memory device
JP2003332466A (ja) * 2002-05-17 2003-11-21 Mitsubishi Electric Corp 半導体装置
US20040241926A1 (en) * 2002-08-26 2004-12-02 Jhyy-Cheng Liou Contactless mask progammable rom
JP2004235313A (ja) * 2003-01-29 2004-08-19 Renesas Technology Corp 半導体装置
JP2007294750A (ja) * 2006-04-26 2007-11-08 Toshiba Corp 半導体装置及びその製造方法
US7504676B2 (en) * 2006-05-31 2009-03-17 Alpha & Omega Semiconductor, Ltd. Planar split-gate high-performance MOSFET structure and manufacturing method
US7868370B2 (en) * 2008-04-14 2011-01-11 Macronix International Co., Ltd. Single gate nonvolatile memory cell with transistor and capacitor
KR101044017B1 (ko) * 2008-12-26 2011-06-24 주식회사 하이닉스반도체 불휘발성 메모리 소자의 제조방법
KR101096388B1 (ko) * 2009-12-30 2011-12-20 주식회사 하이닉스반도체 불휘발성 메모리 소자 및 이의 제조 방법
JP6120609B2 (ja) 2013-02-25 2017-04-26 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体装置
FR3046696A1 (fr) * 2016-01-12 2017-07-14 St Microelectronics Crolles 2 Sas Procede de fabrication de puce electronique
WO2018063301A1 (en) * 2016-09-30 2018-04-05 Intel Corporation Transistors including source/drain employing double-charge dopants

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3059442B2 (ja) * 1988-11-09 2000-07-04 株式会社日立製作所 半導体記憶装置
US5005155A (en) * 1988-06-15 1991-04-02 Advanced Micro Devices, Inc. Optimized electrically erasable PLA cell for minimum read disturb
US5017979A (en) * 1989-04-28 1991-05-21 Nippondenso Co., Ltd. EEPROM semiconductor memory device
US5102814A (en) * 1990-11-02 1992-04-07 Intel Corporation Method for improving device scalability of buried bit line flash EPROM devices having short reoxidation beaks and shallower junctions
KR960002006B1 (ko) * 1991-03-12 1996-02-09 가부시끼가이샤 도시바 2개의 기준 레벨을 사용하는 기록 검증 제어기를 갖는 전기적으로 소거 가능하고 프로그램 가능한 불휘발성 메모리 장치
US5284786A (en) * 1992-08-14 1994-02-08 National Semiconductor Corporation Method of making a split floating gate EEPROM cell
JPH0677440A (ja) * 1992-08-27 1994-03-18 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI449045B (zh) * 2010-07-16 2014-08-11 Yield Microelectronics Corp Low cost electronic erasure can be rewritten read only memory array

Also Published As

Publication number Publication date
KR0184632B1 (ko) 1999-03-20
TW360980B (en) 1999-06-11
US5773861A (en) 1998-06-30
JP2928986B2 (ja) 1999-08-03
US5635416A (en) 1997-06-03
KR950034805A (ko) 1995-12-28
JPH07302853A (ja) 1995-11-14

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