DE1930669C2 - Verfahren zur Herstellung einer integrierten Halbleiterschaltung - Google Patents

Verfahren zur Herstellung einer integrierten Halbleiterschaltung

Info

Publication number
DE1930669C2
DE1930669C2 DE1930669A DE1930669A DE1930669C2 DE 1930669 C2 DE1930669 C2 DE 1930669C2 DE 1930669 A DE1930669 A DE 1930669A DE 1930669 A DE1930669 A DE 1930669A DE 1930669 C2 DE1930669 C2 DE 1930669C2
Authority
DE
Germany
Prior art keywords
layer
aluminum
aluminum oxide
conductor
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1930669A
Other languages
German (de)
English (en)
Other versions
DE1930669A1 (de
Inventor
Hideo Tokio/Tokyo Tsunemitsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP43041769A external-priority patent/JPS5142472B1/ja
Priority claimed from JP92569A external-priority patent/JPS51839B1/ja
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Publication of DE1930669A1 publication Critical patent/DE1930669A1/de
Application granted granted Critical
Publication of DE1930669C2 publication Critical patent/DE1930669C2/de
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6324—
    • H10P14/665—
    • H10P14/69391—
    • H10P14/69392—
    • H10P14/69393—
    • H10P14/69394—
    • H10W20/071—
    • H10W20/077—
    • H10W20/40—
    • H10W20/435—
    • H10W74/43—
    • H10P14/6314—
    • H10W20/072—
    • H10W20/092—

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
DE1930669A 1968-06-17 1969-06-18 Verfahren zur Herstellung einer integrierten Halbleiterschaltung Expired DE1930669C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP43041769A JPS5142472B1 (show.php) 1968-06-17 1968-06-17
JP92569A JPS51839B1 (show.php) 1968-12-28 1968-12-28

Publications (2)

Publication Number Publication Date
DE1930669A1 DE1930669A1 (de) 1970-06-11
DE1930669C2 true DE1930669C2 (de) 1986-11-27

Family

ID=26334042

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1930669A Expired DE1930669C2 (de) 1968-06-17 1969-06-18 Verfahren zur Herstellung einer integrierten Halbleiterschaltung
DE1967363A Expired DE1967363C2 (show.php) 1968-06-17 1969-06-18

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1967363A Expired DE1967363C2 (show.php) 1968-06-17 1969-06-18

Country Status (6)

Country Link
US (1) US3988214A (show.php)
DE (2) DE1930669C2 (show.php)
FR (1) FR2011079A1 (show.php)
GB (1) GB1276745A (show.php)
MY (1) MY7500214A (show.php)
NL (1) NL161617C (show.php)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3437863B2 (ja) 1993-01-18 2003-08-18 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置の作製方法
FR2074675A1 (en) * 1970-01-16 1971-10-08 Semi Conducteurs Mos transistors prodn - with improved resistance to cosmic radiation
US3865624A (en) * 1970-06-29 1975-02-11 Bell Telephone Labor Inc Interconnection of electrical devices
JPS5347669B1 (show.php) * 1971-01-14 1978-12-22
JPS5347946Y2 (show.php) * 1974-08-13 1978-11-16
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
JPS588588B2 (ja) * 1975-05-28 1983-02-16 株式会社日立製作所 半導体集積回路
JPS5851425B2 (ja) * 1975-08-22 1983-11-16 株式会社日立製作所 ハンドウタイソウチ
DE2642471A1 (de) * 1976-09-21 1978-03-23 Siemens Ag Verfahren zur herstellung von mehrlagenverdrahtungen bei integrierten halbleiterschaltkreisen
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution
NL7702814A (nl) * 1977-03-16 1978-09-19 Philips Nv Halfgeleiderinrichting en werkwijze ter ver- vaardiging daarvan.
US4278737A (en) 1978-08-04 1981-07-14 United States Borax & Chemical Corporation Anodizing aluminum
US4617193A (en) * 1983-06-16 1986-10-14 Digital Equipment Corporation Planar interconnect for integrated circuits
US5580825A (en) * 1993-09-20 1996-12-03 International Technology Exchange Corp. Process for making multilevel interconnections of electronic components
TW297142B (show.php) 1993-09-20 1997-02-01 Handotai Energy Kenkyusho Kk
US6777763B1 (en) * 1993-10-01 2004-08-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
JP3030368B2 (ja) 1993-10-01 2000-04-10 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3402400B2 (ja) 1994-04-22 2003-05-06 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6747627B1 (en) 1994-04-22 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device
DE69635397T2 (de) * 1995-03-24 2006-05-24 Shinko Electric Industries Co., Ltd. Halbleitervorrichtung mit Chipabmessungen und Herstellungsverfahren
US6370502B1 (en) * 1999-05-27 2002-04-09 America Online, Inc. Method and system for reduction of quantization-induced block-discontinuities and general purpose audio codec
US6586325B2 (en) * 2001-06-26 2003-07-01 Cosmos Vacuum Technology Corporation Process for making an electronic device having a multilevel structure
US8003513B2 (en) * 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
US8563336B2 (en) * 2008-12-23 2013-10-22 International Business Machines Corporation Method for forming thin film resistor and terminal bond pad simultaneously
WO2018220275A1 (en) * 2017-05-29 2018-12-06 Teknologian Tutkimuskeskus Vtt Oy Semiconductor apparatus

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3337426A (en) * 1964-06-04 1967-08-22 Gen Dynamics Corp Process for fabricating electrical circuits
US3356858A (en) 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
FR1522101A (fr) * 1966-05-09 1968-04-19 Motorola Inc Circuit intégré monolithe
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3351825A (en) * 1964-12-21 1967-11-07 Solitron Devices Semiconductor device having an anodized protective film thereon and method of manufacturing same
USB311264I5 (show.php) * 1964-12-31 1900-01-01
FR1471636A (fr) * 1965-03-31 1967-03-03 Ibm Structure de transistor
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
US3634203A (en) * 1969-07-22 1972-01-11 Texas Instruments Inc Thin film metallization processes for microcircuits

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3169892A (en) * 1959-04-08 1965-02-16 Jerome H Lemelson Method of making a multi-layer electrical circuit
US3356858A (en) 1963-06-18 1967-12-05 Fairchild Camera Instr Co Low stand-by power complementary field effect circuitry
US3337426A (en) * 1964-06-04 1967-08-22 Gen Dynamics Corp Process for fabricating electrical circuits
US3386894A (en) * 1964-09-28 1968-06-04 Northern Electric Co Formation of metallic contacts
FR1522101A (fr) * 1966-05-09 1968-04-19 Motorola Inc Circuit intégré monolithe

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
Ullmanns Encyklopädie der technischen Chemie, 3. Auflage, Bd. 3, München-Berlin 1953, S. 419 - 421 *
US-Z: IBM Techn. Discl. Bull., Bd. 10, Nr. 1, Juni 1967, S. 8-9 *

Also Published As

Publication number Publication date
GB1276745A (en) 1972-06-07
US3988214A (en) 1976-10-26
NL6909115A (show.php) 1969-12-19
DE1967363C2 (show.php) 1988-02-18
NL161617C (nl) 1980-02-15
FR2011079A1 (show.php) 1970-02-27
MY7500214A (en) 1975-12-31
DE1930669A1 (de) 1970-06-11
NL161617B (nl) 1979-09-17

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