FR2074675A1 - Mos transistors prodn - with improved resistance to cosmic radiation - Google Patents

Mos transistors prodn - with improved resistance to cosmic radiation

Info

Publication number
FR2074675A1
FR2074675A1 FR7001565A FR7001565A FR2074675A1 FR 2074675 A1 FR2074675 A1 FR 2074675A1 FR 7001565 A FR7001565 A FR 7001565A FR 7001565 A FR7001565 A FR 7001565A FR 2074675 A1 FR2074675 A1 FR 2074675A1
Authority
FR
France
Prior art keywords
oxide
source
plate
sink
cosmic radiation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7001565A
Other languages
French (fr)
Other versions
FR2074675B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEMI CONDUCTEURS
Original Assignee
SEMI CONDUCTEURS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEMI CONDUCTEURS filed Critical SEMI CONDUCTEURS
Priority to FR7001565A priority Critical patent/FR2074675A1/en
Priority to DE19712101620 priority patent/DE2101620A1/en
Publication of FR2074675A1 publication Critical patent/FR2074675A1/en
Application granted granted Critical
Publication of FR2074675B1 publication Critical patent/FR2074675B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69393—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing tantalum, e.g. Ta2O5
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Manufacture comprises (a) covering a plate of semiconductor material, e.g. silicon, with a layer of silica except in the regions provided for making contact with the source and sink zones, (b) covering the plate so treated with a layer of a metal having an oxide with good resistance to cosmic radiation and/or higher dielectric constant than that of silica, pref. Ta-oxide, (c) placing oxidation-protective disc, pref. Al, on the metal layer above the source and sink contact regions, (d) subjecting the plate to an oxidation treatment whereby the whole of the metal surface except the protected contact regions are converted to oxide, (e) finishing the transistor by metallising the surface between the sink and source to form a grid electrode.
FR7001565A 1970-01-16 1970-01-16 Mos transistors prodn - with improved resistance to cosmic radiation Granted FR2074675A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR7001565A FR2074675A1 (en) 1970-01-16 1970-01-16 Mos transistors prodn - with improved resistance to cosmic radiation
DE19712101620 DE2101620A1 (en) 1970-01-16 1971-01-14 MOS field effect transistor and process for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7001565A FR2074675A1 (en) 1970-01-16 1970-01-16 Mos transistors prodn - with improved resistance to cosmic radiation

Publications (2)

Publication Number Publication Date
FR2074675A1 true FR2074675A1 (en) 1971-10-08
FR2074675B1 FR2074675B1 (en) 1974-06-14

Family

ID=9049149

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7001565A Granted FR2074675A1 (en) 1970-01-16 1970-01-16 Mos transistors prodn - with improved resistance to cosmic radiation

Country Status (2)

Country Link
DE (1) DE2101620A1 (en)
FR (1) FR2074675A1 (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6909115A (en) * 1968-06-17 1969-12-19

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL6909115A (en) * 1968-06-17 1969-12-19

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
REVUE AMERICAINE "IEEE TRANSACTIONS ON ELECTRON DEVICES", VOL ED-13, NO. 5, MAI 1966, "A COMPATIBLE TECHNIQUE FOR THE FORMATION OF THIN TANTALUM FILM RESISTORS ON SILICON INTEGRATED CIRCUITS", MAURO J.WALKER, PAGES 472 *
REVUE AMERICAINE "PROCEEDINGS OF THE IEEE", VOL 55, NO.5, MAI 1967, "MOS TRANSISTORS WITH ANODICALLY FORMED METAL OXIDES AS GATE INSULATORS", W. WITT ET AL. PAGES *
REVUE JAPONAISE "JAPANESE JOURNAL OF APPLIED PHYSICS", VOL. 5, SEPTEMBRE 1966,NO.9, "INVESTIGATION OF SI-TA205 SYSTEM PREPARED BY REACTIVE SPUTTERING", TOYOKI TAKEMOTO ET AL, PAGES 845 *

Also Published As

Publication number Publication date
FR2074675B1 (en) 1974-06-14
DE2101620A1 (en) 1972-07-27

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Legal Events

Date Code Title Description
ST Notification of lapse