DE1639342B2 - Halbleiteranordnung und verfahren zu ihrer herstellung - Google Patents
Halbleiteranordnung und verfahren zu ihrer herstellungInfo
- Publication number
- DE1639342B2 DE1639342B2 DE1968N0031956 DEN0031956A DE1639342B2 DE 1639342 B2 DE1639342 B2 DE 1639342B2 DE 1968N0031956 DE1968N0031956 DE 1968N0031956 DE N0031956 A DEN0031956 A DE N0031956A DE 1639342 B2 DE1639342 B2 DE 1639342B2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- buried layer
- conductivity type
- island
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000004020 conductor Substances 0.000 title claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 53
- 230000015556 catabolic process Effects 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 36
- 238000009792 diffusion process Methods 0.000 claims description 32
- 238000000926 separation method Methods 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 238000011109 contamination Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000000873 masking effect Effects 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000006378 damage Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000007669 thermal treatment Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL6700755A NL6700755A (no) | 1967-01-18 | 1967-01-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1639342A1 DE1639342A1 (de) | 1971-02-04 |
| DE1639342B2 true DE1639342B2 (de) | 1977-06-02 |
Family
ID=19799016
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1968N0031956 Granted DE1639342B2 (de) | 1967-01-18 | 1968-01-13 | Halbleiteranordnung und verfahren zu ihrer herstellung |
Country Status (11)
| Country | Link |
|---|---|
| AT (1) | AT300037B (no) |
| BE (1) | BE709451A (no) |
| CH (1) | CH470764A (no) |
| DE (1) | DE1639342B2 (no) |
| DK (1) | DK119667B (no) |
| ES (1) | ES349367A1 (no) |
| FR (1) | FR1562929A (no) |
| GB (1) | GB1218603A (no) |
| NL (1) | NL6700755A (no) |
| NO (1) | NO124401B (no) |
| SE (1) | SE345555B (no) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2174540B (en) * | 1985-05-02 | 1989-02-15 | Texas Instruments Ltd | Intergrated circuits |
| KR0171128B1 (ko) * | 1995-04-21 | 1999-02-01 | 김우중 | 수직형 바이폴라 트랜지스터 |
-
1967
- 1967-01-18 NL NL6700755A patent/NL6700755A/xx unknown
- 1967-12-20 DK DK640567A patent/DK119667B/da unknown
-
1968
- 1968-01-13 DE DE1968N0031956 patent/DE1639342B2/de active Granted
- 1968-01-15 GB GB213568A patent/GB1218603A/en not_active Expired
- 1968-01-15 CH CH56268A patent/CH470764A/de not_active IP Right Cessation
- 1968-01-15 SE SE48168A patent/SE345555B/xx unknown
- 1968-01-15 AT AT38268A patent/AT300037B/de not_active IP Right Cessation
- 1968-01-15 NO NO17168A patent/NO124401B/no unknown
- 1968-01-16 BE BE709451D patent/BE709451A/xx unknown
- 1968-01-16 ES ES349367A patent/ES349367A1/es not_active Expired
- 1968-01-17 FR FR1562929D patent/FR1562929A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AT300037B (de) | 1972-07-10 |
| CH470764A (de) | 1969-03-31 |
| NO124401B (no) | 1972-04-10 |
| FR1562929A (no) | 1969-04-11 |
| DK119667B (da) | 1971-02-08 |
| NL6700755A (no) | 1968-07-19 |
| GB1218603A (en) | 1971-01-06 |
| SE345555B (no) | 1972-05-29 |
| BE709451A (no) | 1968-07-16 |
| DE1639342A1 (de) | 1971-02-04 |
| ES349367A1 (es) | 1969-09-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| SH | Request for examination between 03.10.1968 and 22.04.1971 | ||
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |