GB1218603A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1218603A
GB1218603A GB213568A GB213568A GB1218603A GB 1218603 A GB1218603 A GB 1218603A GB 213568 A GB213568 A GB 213568A GB 213568 A GB213568 A GB 213568A GB 1218603 A GB1218603 A GB 1218603A
Authority
GB
United Kingdom
Prior art keywords
zone
highly doped
diffused
junction
oxide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB213568A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1218603A publication Critical patent/GB1218603A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

1,218,603. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 15 Jan., 1968 [18 Jan., 1967], No. 2135/68. Heading H1K. A semi-conductor device such as an integrated circuit comprises a semi-conductor body having a portion 1 of one conductivity type and one or more islands 2 of the opposite type adjoining one surface of the body and forming electrically separating PN junctions 3 with the portion, at least one semi-conductor circuit element (e.g. transistor, diode, resistor, capacitor or multi-layer structure) incorporating a zone 5 of the one conductivity type being formed in at least one island and the breakdown voltage of the junction 3 being lower than the breakdown voltage between the zone 5 and the island. The breakdown voltage of the junction 3 is determined by a local, more highly doped, zone of the portion 1, preferably in the form of a separation channel 7, and a local, more highly doped, buried zone 8 of the island, the more highly doped zones being separated by, and defining part of, the PN junction 3 and the impurity concentration characteristic of the one conductivity type in the zone 7 having a maximum adjacent the part of the junction defined by the zones 7 and 8. In one method of making the device, arsenic is vapour-deposited on one surface of a silicon wafer 1 and diffused into the wafer in an oxygen atmosphere to form the highly doped zone 8 and an oxide layer (9, Figs. 3-7, not shown). A channel (10) enclosing the island 2 is etched in the oxide layer, the exposed silicon is etched to a depth of a few tenths of a micron, and boron is vapour-deposited to form a highly doped region (11) which is then diffused through the zone 8 to reach the portion 1. This is possible because boron diffuses about ten times as fast as arsenic. The oxide layer is then removed, an epitaxial layer 4 is grown on the surface, and a further oxide layer 12 is formed on the layer 4 and provided with a channel (13) immediately above the region (11). Boron is vapour deposited in the channel (13) and diffused into the layer 4 to meet the region (11) to form the highly doped separating channel 7, and simultaneously with this diffusion, or subsequently, boron is diffused through a suitable opening in the oxide layer to form the base zone 5 of a transistor. Phosphorus is then diffused-in to form the emitter zone 6 and collector contact zone 28 and finally aluminium is deposited to form contacts 18-20. The circuit is connected to voltage sources V 1 , V 2 in such a way that the voltage difference V 1 between the portion 1 and the base zone 5 is smaller than the difference between the breakdown voltages defined above. When the voltage V 2 is increased the junction 3 breaks down before the breakdown voltage between the base zone 5 and the collector zone 4 is reached so that damage to the transistor is prevented.
GB213568A 1967-01-18 1968-01-15 Improvements in and relating to semiconductor devices Expired GB1218603A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6700755A NL6700755A (en) 1967-01-18 1967-01-18

Publications (1)

Publication Number Publication Date
GB1218603A true GB1218603A (en) 1971-01-06

Family

ID=19799016

Family Applications (1)

Application Number Title Priority Date Filing Date
GB213568A Expired GB1218603A (en) 1967-01-18 1968-01-15 Improvements in and relating to semiconductor devices

Country Status (11)

Country Link
AT (1) AT300037B (en)
BE (1) BE709451A (en)
CH (1) CH470764A (en)
DE (1) DE1639342B2 (en)
DK (1) DK119667B (en)
ES (1) ES349367A1 (en)
FR (1) FR1562929A (en)
GB (1) GB1218603A (en)
NL (1) NL6700755A (en)
NO (1) NO124401B (en)
SE (1) SE345555B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174540A (en) * 1985-05-02 1986-11-05 Texas Instruments Ltd Integrated circuits
US5677209A (en) * 1995-04-21 1997-10-14 Daewoo Electronics Co., Ltd. Method for fabricating a vertical bipolar transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2174540A (en) * 1985-05-02 1986-11-05 Texas Instruments Ltd Integrated circuits
US5182469A (en) * 1985-05-02 1993-01-26 Texas Instruments Incorporated Integrated circuit having bipolar transistors and field effect transistors respectively using potentials of opposite polarities relative to substrate
US5677209A (en) * 1995-04-21 1997-10-14 Daewoo Electronics Co., Ltd. Method for fabricating a vertical bipolar transistor

Also Published As

Publication number Publication date
DK119667B (en) 1971-02-08
CH470764A (en) 1969-03-31
DE1639342A1 (en) 1971-02-04
NO124401B (en) 1972-04-10
AT300037B (en) 1972-07-10
ES349367A1 (en) 1969-09-16
BE709451A (en) 1968-07-16
SE345555B (en) 1972-05-29
DE1639342B2 (en) 1977-06-02
NL6700755A (en) 1968-07-19
FR1562929A (en) 1969-04-11

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