DE1589852B2 - Feldeffekttransistor - Google Patents

Feldeffekttransistor

Info

Publication number
DE1589852B2
DE1589852B2 DE1589852A DEG0051179A DE1589852B2 DE 1589852 B2 DE1589852 B2 DE 1589852B2 DE 1589852 A DE1589852 A DE 1589852A DE G0051179 A DEG0051179 A DE G0051179A DE 1589852 B2 DE1589852 B2 DE 1589852B2
Authority
DE
Germany
Prior art keywords
oxide layer
silicon
field effect
effect transistor
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE1589852A
Other languages
German (de)
English (en)
Other versions
DE1589852A1 (de
Inventor
Michael J. Dupertino Selser
Boyd G. San Francisco Watkins
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arris Technology Inc
Original Assignee
General Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Instrument Corp filed Critical General Instrument Corp
Publication of DE1589852A1 publication Critical patent/DE1589852A1/de
Publication of DE1589852B2 publication Critical patent/DE1589852B2/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11C—FATTY ACIDS FROM FATS, OILS OR WAXES; CANDLES; FATS, OILS OR FATTY ACIDS BY CHEMICAL MODIFICATION OF FATS, OILS, OR FATTY ACIDS OBTAINED THEREFROM
    • C11C5/00—Candles
    • C11C5/002—Ingredients
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P76/40—
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Fats And Perfumes (AREA)
  • Drying Of Semiconductors (AREA)
DE1589852A 1966-09-26 1967-09-26 Feldeffekttransistor Ceased DE1589852B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58205366A 1966-09-26 1966-09-26
US59516366A 1966-11-17 1966-11-17

Publications (2)

Publication Number Publication Date
DE1589852A1 DE1589852A1 (de) 1970-08-06
DE1589852B2 true DE1589852B2 (de) 1979-08-02

Family

ID=27078481

Family Applications (3)

Application Number Title Priority Date Filing Date
DENDAT158928D Active DE158928C (OSRAM) 1966-09-26
DE1589852A Ceased DE1589852B2 (de) 1966-09-26 1967-09-26 Feldeffekttransistor
DE1789194A Ceased DE1789194B1 (de) 1966-09-26 1967-09-26 Verfahren zur Herstellung eines Feldeffekttransistors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DENDAT158928D Active DE158928C (OSRAM) 1966-09-26

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1789194A Ceased DE1789194B1 (de) 1966-09-26 1967-09-26 Verfahren zur Herstellung eines Feldeffekttransistors

Country Status (2)

Country Link
DE (3) DE1589852B2 (OSRAM)
GB (1) GB1186625A (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2020531C2 (de) * 1970-04-27 1982-10-21 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren
JPS4982257A (OSRAM) * 1972-12-12 1974-08-08
US4297721A (en) 1978-11-03 1981-10-27 Mostek Corporation Extremely low current load device for integrated circuit
JPS58165341A (ja) * 1982-03-26 1983-09-30 Toshiba Corp 半導体装置の製造方法
JPH0529329A (ja) * 1991-07-24 1993-02-05 Canon Inc 半導体装置の製造方法
DE102007041229A1 (de) * 2007-08-31 2009-03-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Schaltungsanordnung und ein Verfahren zum Verkapseln derselben

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3189973A (en) * 1961-11-27 1965-06-22 Bell Telephone Labor Inc Method of fabricating a semiconductor device

Also Published As

Publication number Publication date
DE1789194B1 (de) 1980-04-10
DE158928C (OSRAM)
DE1589852A1 (de) 1970-08-06
GB1186625A (en) 1970-04-02

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Legal Events

Date Code Title Description
OI Miscellaneous see part 1
OI Miscellaneous see part 1
8235 Patent refused