DE1544329A1 - Verfahren zur Herstellung epitaxialer Schichten bestimmter Form - Google Patents

Verfahren zur Herstellung epitaxialer Schichten bestimmter Form

Info

Publication number
DE1544329A1
DE1544329A1 DE19661544329 DE1544329A DE1544329A1 DE 1544329 A1 DE1544329 A1 DE 1544329A1 DE 19661544329 DE19661544329 DE 19661544329 DE 1544329 A DE1544329 A DE 1544329A DE 1544329 A1 DE1544329 A1 DE 1544329A1
Authority
DE
Germany
Prior art keywords
recess
semiconductor
base body
grown
october
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19661544329
Other languages
German (de)
English (en)
Inventor
Mehal Edward W
Shaw Don W
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE1544329A1 publication Critical patent/DE1544329A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/615—Combinations of vertical BJTs and one or more of resistors or capacitors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/04—Pattern deposit, e.g. by using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3005—Automatic control in amplifiers having semiconductor devices in amplifiers suitable for low-frequencies, e.g. audio amplifiers
    • H03G3/3026—Automatic control in amplifiers having semiconductor devices in amplifiers suitable for low-frequencies, e.g. audio amplifiers the gain being discontinuously variable, e.g. controlled by switching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/017—Clean surfaces
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/029—Differential crystal growth rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Multimedia (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Element Separation (AREA)
DE19661544329 1965-10-24 1966-10-21 Verfahren zur Herstellung epitaxialer Schichten bestimmter Form Pending DE1544329A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US50497765A 1965-10-24 1965-10-24

Publications (1)

Publication Number Publication Date
DE1544329A1 true DE1544329A1 (de) 1971-03-18

Family

ID=24008513

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19661544329 Pending DE1544329A1 (de) 1965-10-24 1966-10-21 Verfahren zur Herstellung epitaxialer Schichten bestimmter Form

Country Status (5)

Country Link
US (1) US3425879A (enExample)
DE (1) DE1544329A1 (enExample)
FR (2) FR1498752A (enExample)
GB (1) GB1161343A (enExample)
NL (1) NL6615040A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3305985A1 (de) * 1982-02-26 1983-09-08 RCA Corp., 10020 New York, N.Y. Verfahren zum herstellen einer einkristallinen schicht auf einer maske
US5985026A (en) * 1995-08-16 1999-11-16 Siemens Aktiengesellschaft Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
US3486892A (en) * 1966-01-13 1969-12-30 Raytheon Co Preferential etching technique
FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US3789276A (en) * 1968-07-15 1974-01-29 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3514845A (en) * 1968-08-16 1970-06-02 Raytheon Co Method of making integrated circuits with complementary elements
US3663319A (en) * 1968-11-20 1972-05-16 Gen Motors Corp Masking to prevent autodoping of epitaxial deposits
US3851382A (en) * 1968-12-02 1974-12-03 Telefunken Patent Method of producing a semiconductor or thick film device
US3753803A (en) * 1968-12-06 1973-08-21 Hitachi Ltd Method of dividing semiconductor layer into a plurality of isolated regions
GB1288278A (enExample) * 1968-12-31 1972-09-06
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
US3571916A (en) * 1969-03-14 1971-03-23 Microwave Ass Schottky edge contact diode
US3579057A (en) * 1969-08-18 1971-05-18 Rca Corp Method of making a semiconductor article and the article produced thereby
JPS5113396B1 (enExample) * 1969-10-14 1976-04-28
JPS4813572B1 (enExample) * 1969-12-01 1973-04-27
US3924321A (en) * 1970-11-23 1975-12-09 Harris Corp Radiation hardened mis devices
US3737739A (en) * 1971-02-22 1973-06-05 Ibm Single crystal regions in dielectric substrate
NL7113561A (enExample) * 1971-10-02 1973-04-04
FR2168936B1 (enExample) * 1972-01-27 1977-04-01 Labo Electronique Physique
FR2252638B1 (enExample) * 1973-11-23 1978-08-04 Commissariat Energie Atomique
US3984173A (en) * 1974-04-08 1976-10-05 Texas Instruments Incorporated Waveguides for integrated optics
US3936329A (en) * 1975-02-03 1976-02-03 Texas Instruments Incorporated Integral honeycomb-like support of very thin single crystal slices
US4141765A (en) * 1975-02-17 1979-02-27 Siemens Aktiengesellschaft Process for the production of extremely flat silicon troughs by selective etching with subsequent rate controlled epitaxial refill
US4004954A (en) * 1976-02-25 1977-01-25 Rca Corporation Method of selective growth of microcrystalline silicon
US4076573A (en) * 1976-12-30 1978-02-28 Rca Corporation Method of making planar silicon-on-sapphire composite
US4178197A (en) * 1979-03-05 1979-12-11 International Business Machines Corporation Formation of epitaxial tunnels utilizing oriented growth techniques
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4336099A (en) * 1979-11-14 1982-06-22 General Electric Company Method for producing gallium arsenide single crystal ribbons
US5588994A (en) * 1980-04-10 1996-12-31 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
EP0191505A3 (en) * 1980-04-10 1986-09-10 Massachusetts Institute Of Technology Method of producing sheets of crystalline material
US5217564A (en) * 1980-04-10 1993-06-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5273616A (en) * 1980-04-10 1993-12-28 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5362682A (en) * 1980-04-10 1994-11-08 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US5328549A (en) * 1980-04-10 1994-07-12 Massachusetts Institute Of Technology Method of producing sheets of crystalline material and devices made therefrom
US4549926A (en) * 1982-01-12 1985-10-29 Rca Corporation Method for growing monocrystalline silicon on a mask layer
US4473598A (en) * 1982-06-30 1984-09-25 International Business Machines Corporation Method of filling trenches with silicon and structures
FR2548220B1 (fr) * 1983-07-01 1987-07-31 Labo Electronique Physique Guide d'onde lumineuse sur materiau semi-conducteur
US4507158A (en) * 1983-08-12 1985-03-26 Hewlett-Packard Co. Trench isolated transistors in semiconductor films
US4467521A (en) * 1983-08-15 1984-08-28 Sperry Corporation Selective epitaxial growth of gallium arsenide with selective orientation
US4578142A (en) * 1984-05-10 1986-03-25 Rca Corporation Method for growing monocrystalline silicon through mask layer
US4592792A (en) * 1985-01-23 1986-06-03 Rca Corporation Method for forming uniformly thick selective epitaxial silicon
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
US4717597A (en) * 1986-03-21 1988-01-05 Motorola Inc. Method for providing impurities into a carrier gas line
DE3886337D1 (de) * 1987-10-15 1994-01-27 Toshiba Kawasaki Kk Halbleiteranordnungen und Herstellungsverfahren.
DE3821775A1 (de) * 1988-06-28 1990-01-11 Siemens Ag Halbleiterschichtstruktur fuer laserdiode mit vergrabener heterostruktur
JP2603342B2 (ja) * 1988-10-02 1997-04-23 キヤノン株式会社 結晶物品及びその形成方法
US5212112A (en) * 1991-05-23 1993-05-18 At&T Bell Laboratories Selective epitaxy of silicon in silicon dioxide apertures with suppression of unwanted formation of facets
JP2785918B2 (ja) * 1991-07-25 1998-08-13 ローム株式会社 絶縁層の上に成長層を有する半導体装置の製造方法
EP0704913B1 (en) * 1994-09-28 1999-09-01 Nippon Telegraph And Telephone Corporation Optical semiconductor device and method of fabricating the same
US9105686B2 (en) * 2012-11-02 2015-08-11 International Business Machines Corporation Fabrication of localized SOI on localized thick box using selective epitaxy on bulk semiconductor substrates for photonics device integration

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL133151C (enExample) * 1959-05-28 1900-01-01
NL286507A (enExample) * 1961-12-11
US3265542A (en) * 1962-03-15 1966-08-09 Philco Corp Semiconductor device and method for the fabrication thereof
BE632105A (enExample) * 1962-05-09
US3296040A (en) * 1962-08-17 1967-01-03 Fairchild Camera Instr Co Epitaxially growing layers of semiconductor through openings in oxide mask
GB1047388A (enExample) * 1962-10-05
US3206339A (en) * 1963-09-30 1965-09-14 Philco Corp Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites
US3372069A (en) * 1963-10-22 1968-03-05 Texas Instruments Inc Method for depositing a single crystal on an amorphous film, method for manufacturing a metal base transistor, and a thin-film, metal base transistor
US3370995A (en) * 1965-08-02 1968-02-27 Texas Instruments Inc Method for fabricating electrically isolated semiconductor devices in integrated circuits
US3322581A (en) * 1965-10-24 1967-05-30 Texas Instruments Inc Fabrication of a metal base transistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3305985A1 (de) * 1982-02-26 1983-09-08 RCA Corp., 10020 New York, N.Y. Verfahren zum herstellen einer einkristallinen schicht auf einer maske
US5985026A (en) * 1995-08-16 1999-11-16 Siemens Aktiengesellschaft Seed crystal for producing monocrystals and method for producing SiC monocrystals or monocrystalline SiC layers

Also Published As

Publication number Publication date
GB1161343A (en) 1969-08-13
FR1498752A (fr) 1967-10-20
FR1498751A (fr) 1967-10-20
US3425879A (en) 1969-02-04
NL6615040A (enExample) 1967-04-25

Similar Documents

Publication Publication Date Title
DE1544329A1 (de) Verfahren zur Herstellung epitaxialer Schichten bestimmter Form
DE2618733C2 (de) Halbleiterbauelement
DE2455730C3 (de) Feldeffekt-Transistor mit einem Substrat aus einkristallinem Saphir oder Spinell
DE69031753T2 (de) Verfahren zur Herstellung einer Kontaktstelle für die Schaltung eines Halbleiterbauelementes
DE3882849T2 (de) Anordnungen mit cmos-isolator-substrat mit niedriger streuung und verfahren zu deren herstellung.
DE2605830C3 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE19806838A1 (de) Vertikaler Siliciumcarbid-MOSFET und Verfahren zur Herstellung desselben
DE2047777A1 (de) Oberflachenfeldeffekttransistor mit einstellbarer Schwellspannung
DE2655341A1 (de) Halbleiteranordnung mit passivierter oberflaeche und verfahren zur herstellung dieser anordnung
DE2517690A1 (de) Verfahren zum herstellen eines halbleiterbauteils
DE3116268C2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE3636249A1 (de) Verfahren zum herstellen eines mos-feldeffekttransistors und danach hergestellter transistor
DE1564191B2 (de) Verfahren zum herstellen einer integrierten halbleiterschaltung mit verschiedenen, gegeneinander und gegen ein gemeinsames siliziumsubstrat elektrisch isolierten schaltungselementen
DE2005271C3 (de) Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat
DE2238450A1 (de) Halbleiterbaugruppe und verfahren zur herstellung derselben
DE4101130C2 (de) MOS-Feldeffekttransistor und Verfahren zu dessen Herstellung
DE2365056A1 (de) Verfahren zur herstellung von halbleitereinrichtungen unter oertlicher oxidation einer silicium-oberflaeche
DE2225374B2 (de) Verfahren zum herstellen eines mos-feldeffekttransistors
DE3131991A1 (de) "zenerdiode und verfahren zu ihrer herstellung"
DE2154386B2 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE2439535A1 (de) Verfahren zum eindiffundieren aktiver stoerelemente in halbleitermaterialien
DE2510951C3 (de) Verfahren zur Herstellung einer monolithisch integrierten Halbleiterschaltung
DE1564136C3 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2438109A1 (de) Verfahren zur herstellung einer halbleiteranordnung und durch dieses verfahren hergestellte halbleiteranordnung
DE3702409A1 (de) Verfahren zur herstellung eines elektrischen widerstandes in einem halbleiterbaustein