DE1514739A1 - Elektrische Halbleitervorrichtung - Google Patents

Elektrische Halbleitervorrichtung

Info

Publication number
DE1514739A1
DE1514739A1 DE19651514739 DE1514739A DE1514739A1 DE 1514739 A1 DE1514739 A1 DE 1514739A1 DE 19651514739 DE19651514739 DE 19651514739 DE 1514739 A DE1514739 A DE 1514739A DE 1514739 A1 DE1514739 A1 DE 1514739A1
Authority
DE
Germany
Prior art keywords
semiconductor
layer
nickel
contacts
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651514739
Other languages
German (de)
English (en)
Inventor
John Hill
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB20201/62A external-priority patent/GB1010111A/en
Priority claimed from GB36013/62A external-priority patent/GB1044689A/en
Priority claimed from GB39650/62A external-priority patent/GB1023531A/en
Priority claimed from DEST19973A external-priority patent/DE1179280B/de
Priority claimed from GB3786/64A external-priority patent/GB1036165A/en
Priority claimed from GB3785/64A external-priority patent/GB1036164A/en
Priority claimed from GB6100/64A external-priority patent/GB1036166A/en
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1514739A1 publication Critical patent/DE1514739A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19651514739 1962-05-25 1965-01-27 Elektrische Halbleitervorrichtung Pending DE1514739A1 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
GB20201/62A GB1010111A (en) 1962-05-25 1962-05-25 Vapour deposition of metallic films
GB36013/62A GB1044689A (en) 1962-09-21 1962-09-21 Improvements in or relating to mountings for semi-conductor devices
GB39650/62A GB1023531A (en) 1962-05-25 1962-10-19 Improvements in or relating to semiconductor devices
DEST19973A DE1179280B (de) 1962-11-09 1962-11-09 Verfahren zur Herstellung von loetfaehigen Kontaktstellen
GB48863/62A GB1024216A (en) 1962-05-25 1962-12-28 Improvements in or relating to circuit modules including semiconductor devices
GB3786/64A GB1036165A (en) 1962-05-25 1964-01-29 Improvements in or relating to semiconductor devices
GB3785/64A GB1036164A (en) 1962-04-16 1964-01-29 Improvements in or relating to semiconductor devices
GB6100/64A GB1036166A (en) 1964-02-13 1964-02-13 Improvements in or relating to semiconductor devices

Publications (1)

Publication Number Publication Date
DE1514739A1 true DE1514739A1 (de) 1969-07-31

Family

ID=27570745

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19651514739 Pending DE1514739A1 (de) 1962-05-25 1965-01-27 Elektrische Halbleitervorrichtung

Country Status (2)

Country Link
BE (2) BE659001A (enrdf_load_stackoverflow)
DE (1) DE1514739A1 (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106601701B (zh) * 2017-01-19 2023-03-28 贵州煜立电子科技有限公司 大功率二端表面引出脚电子元器件立体封装方法及结构

Also Published As

Publication number Publication date
BE659001A (enrdf_load_stackoverflow) 1965-07-29
BE659002A (enrdf_load_stackoverflow) 1965-07-29

Similar Documents

Publication Publication Date Title
DE1764281C3 (de) Verfahren zum Herstellen einer Halbleitervorrichtung
DE1764951B1 (de) Mehrschichtige metallisierung fuer halbleiteranschluesse
DE2539234A1 (de) Feldemissionsgeraet und verfahren zu seiner herstellung
DE1282196B (de) Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge
DE2730566A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
DE2422120B2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE2340142B2 (de) Verfahren zur massenproduktion von halbleiteranordnungen mit hoher durchbruchspannung
DE3643898A1 (de) Verfahren zur bildung eines leitfaehigen musters auf einer halbleiteroberflaeche
DE1289188B (de) Metallbasistransistor
EP0174686B1 (de) Halbleiter-Temperatursensor
DE1564534A1 (de) Transistor und Verfahren zu seiner Herstellung
DE1639262A1 (de) Halbleiterbauelement mit einer Grossflaechen-Elektrode
DE1812130B2 (de) Verfahren zum herstellen einer halbleiter- oder dickfilmanordnung
DE1514739A1 (de) Elektrische Halbleitervorrichtung
DE2528000B2 (de) Verfahren zur Herstellung einer Lötfläche relativ großer Abmessungen
DE2608813C3 (de) Niedrigsperrende Zenerdiode
DE1439529B2 (de) : Halbleiterbauelement mit einem planaren Halbleiterelement auf einer Kontaktierungsplatte und Verfahren zum Herstellen desselben
DE1439938A1 (de) Hochfrequenz-Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE2537327A1 (de) Halbleiterbauelement mit einem pn- uebergang gleichfoermiger stromdichteverteilung und verfahren zum herstellen eines solchen halbleiterbauelements
DE2105164C2 (de) Halbleiterbauelement mit Basis- und Emitterzone und Widerstandsschicht und Verfahren zu seiner Herstellung
DE1285581C2 (de) Traeger mit einer Mikroschaltung und Verfahren zu seiner Herstellung
DE1769271C3 (de) Verfahren zum Herstellen einer Festkörperschaltung
DE1923314A1 (de) Elektrische Verbindungen und Kontakte fuer Halbleitervorrichtungen
DE2028819A1 (en) Electro formed raised contact - for electronic esp semiconductor components umfrd with help of temporary mask
DE1924845C3 (de) Halbleiteranordnung mit metallischen Kontakten und/oder metallischen Verbindungsschichten