DE1514363B1 - Verfahren zum Herstellen von passivierten Halbleiterbauelementen - Google Patents

Verfahren zum Herstellen von passivierten Halbleiterbauelementen

Info

Publication number
DE1514363B1
DE1514363B1 DE19651514363 DE1514363A DE1514363B1 DE 1514363 B1 DE1514363 B1 DE 1514363B1 DE 19651514363 DE19651514363 DE 19651514363 DE 1514363 A DE1514363 A DE 1514363A DE 1514363 B1 DE1514363 B1 DE 1514363B1
Authority
DE
Germany
Prior art keywords
semiconductor
grooves
semiconductor wafer
layer
attached
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651514363
Other languages
German (de)
English (en)
Inventor
Eric Frederick Cavc
Alfred Mayer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US388237A external-priority patent/US3369290A/en
Application filed by RCA Corp filed Critical RCA Corp
Priority claimed from US478351A external-priority patent/US3383760A/en
Publication of DE1514363B1 publication Critical patent/DE1514363B1/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D471/00—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00
    • C07D471/02—Heterocyclic compounds containing nitrogen atoms as the only ring hetero atoms in the condensed system, at least one ring being a six-membered ring with one nitrogen atom, not provided for by groups C07D451/00 - C07D463/00 in which the condensed system contains two hetero rings
    • C07D471/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/019—Manufacture or treatment of isolation regions comprising dielectric materials using epitaxial passivated integrated circuit [EPIC] processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/497—Inductive arrangements or effects of, or between, wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/131—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being only partially enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
    • H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/55—Design of synthesis routes, e.g. reducing the use of auxiliary or protecting groups

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Die Bonding (AREA)
  • Rectifiers (AREA)
  • Nitrogen Condensed Heterocyclic Rings (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Thyristors (AREA)
DE19651514363 1964-08-07 1965-08-06 Verfahren zum Herstellen von passivierten Halbleiterbauelementen Pending DE1514363B1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US388237A US3369290A (en) 1964-08-07 1964-08-07 Method of making passivated semiconductor devices
US39173264A 1964-08-24 1964-08-24
US46255765A 1965-06-09 1965-06-09
US47797665A 1965-08-06 1965-08-06
US478351A US3383760A (en) 1965-08-09 1965-08-09 Method of making semiconductor devices

Publications (1)

Publication Number Publication Date
DE1514363B1 true DE1514363B1 (de) 1970-06-18

Family

ID=27541415

Family Applications (3)

Application Number Title Priority Date Filing Date
DE19651514363 Pending DE1514363B1 (de) 1964-08-07 1965-08-06 Verfahren zum Herstellen von passivierten Halbleiterbauelementen
DE19651620294 Pending DE1620294A1 (de) 1964-08-07 1965-08-20 Neue heterocyclische Verbindungen
DE1620295A Expired DE1620295C3 (de) 1964-08-07 1965-08-20 Isochinolo eckige Klammer auf 2,1-d eckige Klammer zu benzo eckige Klammer auf 1,4 eckige Klammer zu diazepin-6-one

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE19651620294 Pending DE1620294A1 (de) 1964-08-07 1965-08-20 Neue heterocyclische Verbindungen
DE1620295A Expired DE1620295C3 (de) 1964-08-07 1965-08-20 Isochinolo eckige Klammer auf 2,1-d eckige Klammer zu benzo eckige Klammer auf 1,4 eckige Klammer zu diazepin-6-one

Country Status (17)

Country Link
BE (1) BE668687A (https=)
BG (1) BG17566A3 (https=)
BR (4) BR6572394D0 (https=)
CA (1) CA953297A (https=)
CH (5) CH460033A (https=)
CY (1) CY613A (https=)
DE (3) DE1514363B1 (https=)
ES (1) ES337005A1 (https=)
FI (1) FI46968C (https=)
FR (2) FR5364M (https=)
GB (7) GB1084598A (https=)
IL (1) IL24214A (https=)
MC (1) MC542A1 (https=)
MY (1) MY7100223A (https=)
NL (4) NL6510287A (https=)
NO (1) NO120580B (https=)
SE (5) SE312863B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated side surfaces and process for their production.
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
EP0690495A1 (en) * 1994-04-21 1996-01-03 Goodark Electronic Corp. Method for making circular diode chips through glass passivation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5116264B2 (https=) * 1971-10-01 1976-05-22
FR2328286A1 (fr) 1975-10-14 1977-05-13 Thomson Csf Procede de fabrication de dispositifs a semiconducteurs, presentant une tres faible resistance thermique, et dispositifs obtenus par ledit procede
GB201111217D0 (en) 2011-07-01 2011-08-17 Ash Gaming Ltd A system and method
US9570542B2 (en) * 2014-04-01 2017-02-14 Infineon Technologies Ag Semiconductor device including a vertical edge termination structure and method of manufacturing

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
DE1114938B (de) * 1960-02-04 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiter-anordnungen, insbesondere von Hochfrequenz-Transistoren mit moeglichst duennen Kollektorzonen
DE1173994B (de) * 1961-05-26 1964-07-16 Standard Elektrik Lorenz Ag Verfahren zur Herstellung von elektrischen Halbleiteranordnungen

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2865082A (en) * 1953-07-16 1958-12-23 Sylvania Electric Prod Semiconductor mount and method
DE1114938B (de) * 1960-02-04 1961-10-12 Intermetall Verfahren zur gleichzeitigen Herstellung mehrerer flaechenhafter Halbleiter-anordnungen, insbesondere von Hochfrequenz-Transistoren mit moeglichst duennen Kollektorzonen
DE1173994B (de) * 1961-05-26 1964-07-16 Standard Elektrik Lorenz Ag Verfahren zur Herstellung von elektrischen Halbleiteranordnungen

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0603971A3 (en) * 1992-12-23 1995-06-28 Koninkl Philips Electronics Nv Semiconductor device with passivated side surfaces and process for their production.
EP0603973A3 (en) * 1992-12-23 1995-06-28 Philips Electronics Nv Semiconductor arrangement with p-n junctions separated by trenches and method for their production.
EP0690495A1 (en) * 1994-04-21 1996-01-03 Goodark Electronic Corp. Method for making circular diode chips through glass passivation

Also Published As

Publication number Publication date
DE1620294A1 (de) 1970-02-05
BR6681707D0 (pt) 1973-09-06
SE312863B (https=) 1969-07-28
CH466298A (de) 1968-12-15
FI46968C (fi) 1973-08-10
BR6680263D0 (pt) 1973-03-01
GB1112334A (en) 1968-05-01
ES337005A1 (es) 1968-01-16
NL6510287A (https=) 1966-02-08
GB1126352A (en) 1968-09-05
CH460008A (de) 1968-07-31
IL24214A (en) 1969-06-25
MC542A1 (fr) 1966-04-06
BG17566A3 (bg) 1973-11-10
GB1120488A (en) 1968-07-17
SE322227B (https=) 1970-04-06
DE1620295C3 (de) 1975-05-22
GB1126354A (en) 1968-09-05
CA953297A (en) 1974-08-20
NL6607936A (https=) 1966-12-12
DE1564537B2 (de) 1973-01-25
BR6572393D0 (pt) 1973-08-14
CY613A (en) 1971-10-01
CH460031A (de) 1968-07-31
CH460007A (de) 1968-07-31
FR5364M (https=) 1967-09-11
FR4985M (https=) 1967-04-10
MY7100223A (en) 1971-12-31
SE351641B (https=) 1972-12-04
NL6611133A (https=) 1967-02-10
NO120580B (https=) 1970-11-09
GB1126353A (en) 1968-09-05
CH460033A (de) 1968-07-31
SE350500B (https=) 1972-10-30
BE668687A (https=) 1966-02-23
DE1564537A1 (de) 1970-07-30
SE345040B (https=) 1972-05-08
DE1620295B2 (de) 1974-10-03
BR6572394D0 (pt) 1973-08-14
NL129867C (https=) 1900-01-01
FI46968B (https=) 1973-05-02
GB1133376A (en) 1968-11-13
DE1620295A1 (de) 1970-02-19
GB1084598A (en) 1967-09-27

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